Abstract: Provided herein is an electric Al—Zr—Mn alloy-plating bath which comprises (A) an aluminum halide; (B) one or at least two kinds of compounds selected from the group consisting of N-alkylpyridinium halides, N-alkylimidazolium halides, N,N?-dialkyl-imidazolium halides, N-alkyl-pyrazolium halides, N,N?-dialkyl-pyrazolium halides, N-alkylpyrrolidinium halides and N,N-dialkyl-pyrrolidinium halides; (C) a zirconium halide; and (D) a manganese halide, in which the molar ratio of the aluminum halide (A) to the compound (B) ranges from 1:1 to 3:1. The plating bath never involves any risk of causing an explosion and can provide a smooth and fine Al—Zr—Mn alloy-plated film. Moreover, the resulting film has high resistance to corrosion even when it does not contain any chromium and therefore, it is quite suitable from the viewpoint of the environmental protection and it can thus be used in a wide variety of applications including the plating of parts for motorcars, and the plating of parts for electrical appliances.

Abstract: Disclosed herein is an electric Al or Al alloy plating bath which comprises (A) an aluminum halide; (B) one kind of compound or at least two kinds of compounds selected from the group consisting of N-alkylpyridinium halides, N-alkylimidazolium halides, N,N?-alkylimidazolium halides, N-alkyl-pyrazolium halides, N,N?-alkylpyrazolium halides, N-alkylpyrrolidinium halides and N,N-alkyl-pyrrolidinium halides; and (C) a high boiling point aromatic hydrocarbon solvent, wherein the molar ratio of the aluminum halide (A) to the compound (B) ranges from 1:1 to 3:1 and the flash point of the plating bath is not less than 50° C. The plating bath never involves any risk of causing an explosion, can be handled industrially with safety and can provide a smooth and fine Al of Al alloy plated film.

Abstract: A treatment solution that is used to form a chemical coating of trivalent chromium free of hexavalent chromium having uniform black appearance and good corrosion resistance on the surface of zinc or zinc alloy and that attains prolongation of treatment bath lifetime; and a method of forming a black trivalent chromium chemical coating on the surface of zinc or zinc alloy. There is provided a treatment solution for forming of a black trivalent chromium chemical coating on zinc or zinc alloy, comprising trivalent chromium ions, a chelating agent capable of forming a water-soluble complex with trivalent chromium, zinc ions, a sulfur compound and phosphite ions.

Abstract: A memory controller for reducing a time to create an address management table during initialization of a memory card. The memory controller includes a read-write memory for temporarily storing the address management table and a second memory controller for writing, in a nonvolatile memory, an address management table temporarily stored in the read-write memory. The second memory controller also writes address range specifying information that specifies an address range, when a data writing destination is changed from a first address range to a second address range. The memory controller includes an address management table generator for reading distributed management information used for managing a state of at least one physical block included in the destination address range specified by the address range specifying information during initialization, and to generate the address management table based on the distributed management information.

Abstract: A suspension bridge is supported by a cable having one or more cable bands. An anti-rusting device is comprised of one or more covers, each of the covers including an inner peripheral surface and covering the cable so as to leave a gap between the inner peripheral surface and an outer periphery of the cable, the gap being capable of conveying a gas along the outer periphery of the cable; and a ventilator configured to dry and feed the gas into the gap, the ventilator air-tightly communicating with the gap.

Abstract: A structure of a panel which can be thinned down to about a panel thickness of a PDP and a manufacturing method thereof are provided. A gas filling hole is provided to a surface of a rear glass substrate of a PDP, the surface coming in contact with a front glass substrate of the PDP. Vacuuming and filling of a discharge gas are performed through the gas filling hole. After filling of the discharge gas, a mechanism for lifting solder iron up and down and supplying solder provided inside a chamber inserts a tip of an ultrasonic soldering iron into the gas filling hole to start supplying a solder which is a material for a plug sealant. When a series of forming steps of the plug sealant are finished, the ultrasonic soldering iron is retreated before the solder is solidified to finish formation of the plug sealant.

Abstract: With nonvolatile memory device employing a nonvolatile memory suc h as multiple-valued NAND flash memory or the like in which each memory cell holds data in a plurality of pages, there is such a problem that, if an error occurred under writing data, data stored in other page in the same group of the current page is changed, and hence the object of the present invention is to solve this problem. In writing data into a nonvolatile memory 110, when error occurred under writing data into a certain page, an error page identification part 128 identifies an error type and a physical address of the page where error occurred. An error corrector 129 then corrects errors occurred in other pages belonging to the same group of error occurrence page.

Abstract: A processing solution for forming a hexavalent chromium free, corrosion resistant trivalent chromate conversion film on zinc or zinc alloy plating layers comprises: trivalent chromium and oxalic acid in a molar ratio ranging from 0.5/1 to 1.5/1, wherein the trivalent chromium is present in the form of water-soluble complex with oxalic acid; and cobalt ions, which do not form a hardly soluble metal salt with oxalic acid and are stably present in the processing solution without causing any precipitation; wherein the solution reacts with zinc when bringing it into contact with the zinc or zinc alloy plating to form a hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, chromium, cobalt, oxalic acid and silicon on the plating.

Abstract: A method for increasing the speed of processing when writing multiple files in parallel and writing file data in a stable manner in the case where the regions of a non-volatile memory in an information recording module are managed according to a filesystem is provided. An access module (1) includes a unit (104) that communicates, to an information recording module (2), information regarding the storage location of a directory entry, and also includes a unit (105) that pads file data when writing fractional data such as the end of a file and writes that data into the information recording module (2). Upon determining that the directory entry is to be written based on the communicated information, the information recording module (2) stores the directory entry in a dedicated physical block. Furthermore, the access module (1) pads the data of multiple files as necessary and records those files in continuous addresses in units that are a multiple of a predetermined size of a unit of recording processing.

Abstract: A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device 10 has a semiconductor multilayer 13 formed on a substrate 11 and made of a nitride semiconductor or a silicon carbide semiconductor, a source electrode 16 and a drain electrode 17 formed and spaced apart from each other on the semiconductor multilayer 13, and a first gate electrode 18A and a second gate electrode 18B formed between the source electrode 16 and the drain electrode 17, successively from the source electrode 16 side.

Abstract: A PDP driving circuit is comprised of a power recovery unit for recovering an electric power from a capacitive load by resonance operation with PDP which is the capacitive load Cp, and reusing the recovered power. The power recovery unit includes a recovery inductor for resonating with the capacitive load, a recovery switch element for connecting the recovery capacitor to the capacitive load and recovery inductor, and forming a channel for passing resonance current, a counterflow preventive diode for blocking flow of current in the recovery switch element in reverse polarity direction, and a protective diode for forming a closed current channel including the recovery inductor and recovery switch element when the counterflow preventive diode is changed from ON state to OFF state.

Abstract: An address at which a writing error occurs is held, and after a completion of a series of writings, the data of the held address is read. Then, a faulty-block processing is performed only for the addresses, for which it is determined that retry of writing is required, thereby preventing an increase of faulty-blocks. This can suppress the problem that when a writing is performed in a particular flash memory, a writing error frequently occurs and a large number of faulty blocks occur.

Abstract: A suspension bridge is supported by a cable with one or more cable bands. The rust-preventing device comprises one or more covers for so covering the cable that the gaps allowing a gas to longitudinally flow along the outer surface of the cable are formed between the inner peripheral surfaces of the covers and the outer surface of the cable, and an air blower which is in airtight communication with the gaps and supplies air into the gaps after drying it.

Abstract: Disclosed is an electric Al—Zr alloy plating bath containing an aluminum halide (A), one or more compounds (B) selected from the group consisting of N-alkylpyridinium halides, N-alkylimidazolium halides, N,N?-alkylimidazolium halides, N-alkylpyrazolium halides and N,N?-alkylpyrazolium halides, and a zirconium halide (C). The molar ratio between the aluminum halide (A) and the compounds (B) is from 1:1 to 3:1. The electric Al—Zr alloy plating bath further contains an aromatic organic solvent (D), an organic polymer (E) and one or more additives (F) selected from brightening agents.

Abstract: In a wake-up apparatus for waking up a sleeper by light stimulus, it wakes the sleeper comfortably without feeling glare. A lighting device has a first lighting unit at a position that a light emitting face cannot be observed directly by the sleeper, and a second lighting unit at a position that a light emitting face can be observed directly by the sleeper. A control device activates the lighting device a predetermined time before a preset wake-up time so as to vary illuminance of light emitted from the lighting device in an order of low illuminance, middle illuminance and high illuminance, to light only the first lighting unit in a low illuminance condition and a middle illuminance condition, and to light both of the first lighting unit and the second lighting unit in a high illuminance condition, and quickly varies from the middle illuminance condition to the high illuminance condition.

Abstract: When a control unit (160) in a storage device (100) detects that a write end command or a data amount to be written has been transmitted from a host device (110), the control unit (160) saves control information required for writing data in a control information save memory (142). The control unit (160) also saves data which has not been written in storage medium into a buffer save memory (152) from a data buffer (151) and releases the busy state for the host device (110). The control unit (160) writes the saved data into a storage medium (120). Even if the power is turned OFF before completion of write, write can be performed into the storage medium (120) by using the saved data when the power is turned ON next time.

Abstract: A processing solution for forming a hexavalent chromium free, corrosion resistant trivalent chromate conversion film on zinc or zinc alloy plating layers comprises: trivalent chromium and oxalic acid in a molar ratio ranging from 0.5/1 to 1.5/1, wherein the trivalent chromium is present in the form of water-soluble complex with oxalic acid; and cobalt ions, which do not form a hardly soluble metal salt with oxalic acid and are stably present in the processing solution without causing any precipitation; wherein the solution reacts with zinc when bringing it into contact with the zinc or zinc alloy plating to form a hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, chromium, cobalt, oxalic acid and silicon on the plating.

Abstract: A semiconductor memory device in which data is not written in a transfer destination under a state including an error when an error occurs at the time of reading data at the transfer destination. The semiconductor memory device (1) comprising a nonvolatile memory (2) having a data writing unit smaller than a physical block is provided with an error detecting/correcting circuit (23) in the non-volatile memory (2). When data stored in a specified block of the non-volatile memory (2) is transferred to a different physical block and written, the error detecting/correcting circuit (23) performs error detection and correction of data.

Abstract: A trivalent-chromium chemical conversion coating from which substantially no hexavalent chromium is released. The trivalent-chromium chemical conversion coating is one formed on the surface of a zinc or zinc-alloy deposit. In a brine spray test, the chemical conversion coating has unsusceptibility to corrosion (time required for white-rust formation) of 96 hours or longer. The chemical conversion coating has a hexavalent-chromium concentration less than 0.01 ?g/cm2 in terms of metal atom amount. The amount of hexavalent chromium released after 30-day standing in a thermo-hygrostatic chamber at a temperature of 80° C. and a humidity of 95% (amount of hexavalent chromium released when the coating is immersed in 100° C. water for 10 minutes) is smaller than 0.05 ?g/cm2.

Abstract: A scan IC includes a switch circuit and a logic circuit. The switch circuit includes first and second transistors and a level shift circuit. First and second control signals that change between a logical “1” and a logical “0” are applied to an input terminal of the logic circuit. The logic circuit applies a third control signal to the first transistor and applies a fourth control signal to the second transistor based on the applied first and second control signals. A detection circuit is connected to the input terminal of the logic circuit. An abnormality of the scan IC is detected by the detection circuit.