Patents by Inventor Mandyam A. Sriram
Mandyam A. Sriram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220367236Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.Type: ApplicationFiled: October 8, 2021Publication date: November 17, 2022Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Yongjing Lin, Satish Radhakrishnan, Haoyan Sha, Shih Chung Chen, Mario D. Silvetti, Mandyam Sriram, Vijay D. Parkhe
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Publication number: 20220359532Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.Type: ApplicationFiled: May 5, 2021Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Yong Yang, Kunal Bhatnagar, Srinivas Gandikota, Seshadri Ganguli, Jose Alexandro Romero, Mandyam Sriram, Mohith Verghese, Jacqueline S. Wrench, Yixiong Yang
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Publication number: 20220254900Abstract: A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-? metal oxide layer on the interfacial layer, the high-? metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-? metal oxide capping layer on the high-? metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-? metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-? metal oxide layer to form a dipole region.Type: ApplicationFiled: February 8, 2022Publication date: August 11, 2022Applicant: Applied Materials, Inc.Inventors: Yong Yang, Srinivas Gandikota, Steven C.H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang
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Publication number: 20220165540Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20220162748Abstract: Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Joseph Yudovsky, Kevin Griffin, Mandyam Sriram
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Publication number: 20220098731Abstract: Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: Applied Materials, Inc.Inventors: Kedi Wu, Chenfei Shen, Chi-Chou Lin, Ilanit Fisher, Shih Chung Chen, Mandyam Sriram, Srinivas Gandikota
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Publication number: 20220093443Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.Type: ApplicationFiled: September 23, 2020Publication date: March 24, 2022Applicant: Applied Materials, Inc.Inventors: Abhishek Chowdhury, Vijayabhaskara Venkatagiriyappa, Mihaela A. Balseanu, Jyoti Prakash Deo, Srinivas Ramakrishna, Keiichi Tanaka, Mandyam Sriram, Francis Kanyiri Mungai, Mario D. Silvetti, Sriharish Srinivasan
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Patent number: 11282676Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.Type: GrantFiled: June 18, 2019Date of Patent: March 22, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20220077298Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.Type: ApplicationFiled: September 4, 2020Publication date: March 10, 2022Applicant: Applied Material, Inc.Inventors: SRINIVAS GANDIKOTA, Steven C. H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang, Yong Yang
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Patent number: 11261525Abstract: Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.Type: GrantFiled: June 16, 2016Date of Patent: March 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Joseph Yudovsky, Kevin Griffin, Mandyam Sriram
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Publication number: 20210384035Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a fluorine-free metallic tungsten film. The fluorine-free metallic tungsten film is exposed to a second process condition to deposit a tungsten film on the fluorine-free metallic tungsten film.Type: ApplicationFiled: April 8, 2021Publication date: December 9, 2021Applicant: Applied Materials, Inc.Inventors: Ilanit Fisher, Shih Chung Chen, Kedi Wu, Ashley Lin, Chi-Chou Lin, Yi Xu, Yu Lei, Mandyam Sriram, Wen Ting Chen, Srinivas Gandikota, Chenfei Shen, Naomi Yoshida, He Ren
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Publication number: 20210384036Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.Type: ApplicationFiled: June 4, 2021Publication date: December 9, 2021Applicant: Applied Materials, Inc.Inventors: Ilanit Fisher, Chi-Chou Lin, Kedi Wu, Wen Ting Chen, Shih Chung Chen, Srinivas Gandikota, Mandyam Sriram, Chenfei Shen, Naomi Yoshida, He Ren
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Publication number: 20210351071Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.Type: ApplicationFiled: May 11, 2020Publication date: November 11, 2021Inventors: Wenyi LIU, Wei TANG, Srinivas GANDIKOTA, Yixiong YANG, Yong WU, Jianqiu GUO, Arkaprava DAN, Mandyam SRIRAM
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Publication number: 20210305052Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.Type: ApplicationFiled: June 14, 2021Publication date: September 30, 2021Applicant: Applied Materials, Inc.Inventors: Kelvin Chan, Yihong Chen, Jared Ahmad Lee, Kevin Griffin, Srinivas Gandikota, Jospeh Yudovsky, Mandyam Sriram
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Patent number: 11133205Abstract: Apparatus and methods to process one or more substrate are described. A processing chamber comprises a support assembly, a chamber lid, and a controller. The chamber lid has a front surface facing the support assembly, a first sensor on the front surface and a second sensor on the front surface, the first sensor positioned at a first distance from the central rotational axis, and the second sensor positioned at a second distance from the central rotational axis greater than the first distance. The controller is configured to determine if a substrate is within or outside of the substrate support region of the support assembly.Type: GrantFiled: May 18, 2020Date of Patent: September 28, 2021Assignee: Applied Materials, Inc.Inventors: Sanggyum Kim, Prasanth Narayanan, Subramanian Tamilmani, Mandyam Sriram
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Publication number: 20210262092Abstract: Gas delivery systems and methods of delivering a process gas are described. The gas delivery system includes an inert gas line and a first reactive gas line connected to a gas line with a purge gas flow. The flows of inert gas and first reactive gas are controlled so that the pressure at the end of the gas line remains substantially constant.Type: ApplicationFiled: February 26, 2021Publication date: August 26, 2021Applicant: Applied Materials, Inc.Inventors: Muhammad M. Rasheed, Mandyam Sriram, Anqing Cui, Sanjeev Baluja, Kevin Griffin, Joseph AuBuchon
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Patent number: 11043386Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.Type: GrantFiled: April 23, 2018Date of Patent: June 22, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Kelvin Chan, Yihong Chen, Jared Ahmad Lee, Kevin Griffin, Srinivas Gandikota, Joseph Yudovsky, Mandyam Sriram
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Patent number: 11028477Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.Type: GrantFiled: October 19, 2016Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
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Patent number: 10991586Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.Type: GrantFiled: March 30, 2020Date of Patent: April 27, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Yong Wu, Wei V. Tang, Jianqiu Guo, Wenyi Liu, Yixiong Yang, Jacqueline S. Wrench, Mandyam Sriram, Srinivas Gandikota, Yumin He
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Publication number: 20200373178Abstract: Apparatus and methods to process one or more substrate are described. A processing chamber comprises a support assembly, a chamber lid, and a controller. The chamber lid has a front surface facing the support assembly, a first sensor on the front surface and a second sensor on the front surface, the first sensor positioned at a first distance from the central rotational axis, and the second sensor positioned at a second distance from the central rotational axis greater than the first distance. The controller is configured to determine if a substrate is within or outside of the substrate support region of the support assembly.Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Sanggyum Kim, Prasanth Narayanan, Subramanian Tamilmani, Mandyam Sriram