Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the top surface of the semiconductor wafer near the gap feature. An ashing operation may then be performed to preferentially remove the built-up material from the top surface of the semiconductor wafer. Further groups of deposition-etching cycles may then be performed, interspersed with further ashing cycles.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract: Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.

Abstract: Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the top surface of the semiconductor wafer near the gap feature. An ashing operation may then be performed to preferentially remove the built-up material from the top surface of the semiconductor wafer. Further groups of deposition-etching cycles may then be performed, interspersed with further ashing cycles.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract: Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps.

Abstract: Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.