Abstract: An HMD device identifies a pose of the device and identifies a subset of a plurality of camera viewpoints of a light-field based on the pose. The HMD device interpolates image data of the light-field based on the pose and the subset of the plurality of camera viewpoints to generate an interpolated view; and displays at the HMD device an image based on the interpolated view. By interpolating based on the subset of camera viewpoints, the HMD device can reduce processing overhead and improve the user experience.

Abstract: The invention provides a covered dustbin or covered container. In particular, the invention relates to a lock assembly for dustbins and covered containers. A lower half of the lock is mounted to the inside wall of the dustbin and an underlid half is mounted to the underside of a lid that is hinged to a location adjacent the upper rim of the dustbin. A pair of interlocking engagement members is provided to releasably secure the lid to the dustbin. The lower half and the underlid half each include one interlocking engagement member, such as a hook and a strike. A rocker, when actuated, urges the interlocking engagement members into a disengaged position, for example to disengage the hook from the strike. A user can use a handle provided on the lid to press down the rocker to disengage the lock and lift the lid in a one-hand operation.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.

Abstract: A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic reference layer includes a layer of Hf that causes the magnetic reference layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves reliability and stability of the magnetic data recording element by preventing loss of magnetic orientation of the magnetic reference layer such as during high writing current conditions.

Abstract: A Magnetic Random Access Memory apparatus device having a memory element formed as a magnetic tunnel junction (MTJ) pillar and having a heating element for maintaining a desired minimum temperature of the memory element. The heating element is separated from the memory element by a thin, non-magnetic, electrically insulating wall, which can be constructed of alumina. The heating element is connected with circuitry that controllably delivers electrical current to the heating element to maintain a desired minimum temperature of the memory element.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a non-uniform moment density, and may have a moment density at its center that is greater than a moment density at its perimeter. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The decreased moment density at the perimeter of the precessional spin current layer helps to stabilize the free layer when the effective magnetic field of the precessional spin current layer is high.

Abstract: A Magnetic Random Access Memory apparatus device having a memory element formed as a magnetic tunnel junction (MTJ) pillar and having a heating element for maintaining a desired minimum temperature of the memory element. The heating element is separated from the memory element by a thin, non-magnetic, electrically insulating wall, which can be constructed of alumina. The heating element is connected with circuitry that controllably delivers electrical current to the heating element to maintain a desired minimum temperature of the memory element.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the free layer. The skyrmionic enhancement layer helps to initiate the switching of the free layer.

Abstract: A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic reference layer includes a layer of Hf that causes the magnetic reference layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves reliability and stability of the magnetic data recording element by preventing loss of magnetic orientation of the magnetic reference layer such as during high writing current conditions.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the free layer. The skyrmionic enhancement layer helps to initiate the switching of the free layer.

Abstract: In one general aspect, a computer-implemented method can include identifying a plurality of pixel samples included in a layered depth image (LDI) representation of a scene for rendering in a three-dimensional (3D) image in a virtual reality (VR) space, grouping, by a processor, a subset of the plurality of pixel samples into a block of data, including extracting each pixel sample included in the subset of the plurality of pixel samples from the LDI representation of the scene for inclusion in the block of data based on an error metric associated with the respective pixel sample, creating, by the processor, a texture map for a block of data, the texture map being associated with the block of data, storing the block of data and the texture map, and triggering a rendering of the 3D image in the VR space using the block of data and the texture map.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a non-uniform moment density, and may have a moment density at its center that is greater than a moment density at its perimeter. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The decreased moment density at the perimeter of the precessional spin current layer helps to stabilize the free layer when the effective magnetic field of the precessional spin current layer is high. Spin accumulation can be increased near the center of the precessional spin current layer, helping to switch the free layer.

Abstract: An HMD device identifies a pose of the device and identifies a subset of a plurality of camera viewpoints of a light-field based on the pose. The HMD device interpolates image data of the light-field based on the pose and the subset of the plurality of camera viewpoints to generate an interpolated view; and displays at the HMD device an image based on the interpolated view. By interpolating based on the subset of camera viewpoints, the HMD device can reduce processing overhead and improve the user experience.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a diameter that is different from a diameter of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a central axis that is offset from a central axis of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The off-center design may be used to adjust the location of the stray-field injection in the free layer.

Abstract: An HMD device identifies a pose of the device and identifies a subset of a plurality of camera viewpoints of a light-field based on the pose. The HMD device interpolates image data of the light-field based on the pose and the subset of the plurality of camera viewpoints to generate an interpolated view; and displays at the HMD device an image based on the interpolated view. By interpolating based on the subset of camera viewpoints, the HMD device can reduce processing overhead and improve the user experience.

Abstract: In one general aspect, a method can include combining a partition polygon and a generated texture map to form a model of a scene for rendering in three dimensions in a virtual reality space. The generating of the texture map can include projecting a Layered Depth Image sample in a partition polygon to a point in a source camera window space, projecting the point back into the partition polygon as a surface element (surfel), projecting the surfel to a surfel footprint in a target camera window space, projecting from the target camera window space to the partition polygon, sub-pixel samples included in pixels covered by the surfel footprint, projecting the sub-pixel samples from the partition polygon and into the source camera window space, and applying a color weight to each sub-pixel sample based on the location of the sample in the source camera window space.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device reduces stray magnetic fields generated by magnetic layers of the stack, including a reference layer and magnetic layers of the synthetic antiferromagnetic layer, in a way that reduces their impact on the other layers of the stack, including a free layer and an optional filter layer, which may include a polarizer layer or a precessional spin current magnetic layer. The reduction in stray magnetic fields in the stack increases the electrical and retention performance of the stack by reducing switching asymmetry in the free layer. The reduction in stray magnetic fields also may improve performance of a filter layer, such as a precessional spin current magnetic layer by reducing asymmetry in the dynamic magnetic rotation of that layer.

Abstract: In one general aspect, a computer-implemented method can include identifying a plurality of pixel samples included in a layered depth image (LDI) representation of a scene for rendering in a three-dimensional (3D) image in a virtual reality (VR) space, grouping, by a processor, a subset of the plurality of pixel samples into a block of data, including extracting each pixel sample included in the subset of the plurality of pixel samples from the LDI representation of the scene for inclusion in the block of data based on an error metric associated with the respective pixel sample, creating, by the processor, a texture map for a block of data, the texture map being associated with the block of data, storing the block of data and the texture map, and triggering a rendering of the 3D image in the VR space using the block of data and the texture map.