Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: An optical beam transformation system, which can be designed to be utilized in an illuminating system of a microlithograpic projection exposure apparatus, has a sequence of optical elements arranged along an optical axis of the optical beam transformation system and designed for transforming an entrance light distribution striking an entrance surface of the optical beam transformation system into an exit light distribution emerging from an exit surface of the optical beam transformation system by radial redistribution of light intensity. The optical elements include at least one transformation element causing a radial redistribution of light intensity and having at least one transformation surface inclined to the optical axis and causing a polarization-selective reflection of a light distribution incident on the transformation surface according to an efficiency symmetry characteristic for the transformation surface.

Abstract: A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: An optical system, for example an illumination system or a projection objective (10), of a microlithographic projection exposure apparatus contains an optical element (L2, L3) which consists of a birefringent material. A projection light beam (14) formed by linearly polarized light rays passes through the optical element (L2, L3). In order to avoid perturbations of the polarization distribution of the light beam, the birefringent material is aligned such that each light ray entering the material is polarized substantially parallel or substantially perpendicularly to a slow birefringent axis for the respective light ray.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system comprises an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method comprises setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: An optical unit for an illumination system of a microlithographic projection exposure apparatus has a refractive optical element which comprises an arrangement of a plurality of refractive subelements arranged next to one another in a plane. The optical unit also has a shadowing device by which at least one region on the refractive optical element can be deliberately shadowed at least partially. The shadowing makes it possible to control the angular distribution of light passing through the optical unit.

Abstract: A beam reshaping unit for an illumination system (10) of a microlithographic projection exposure apparatus comprises a first beam reshaping element (62) having a first beam reshaping surface (68) and a second beam reshaping element having a second beam reshaping surface (74) which faces the first beam reshaping surface (68). The two beam reshaping surfaces (68; 74) are rotationally symmetrical with respect to an optical axis (22) of the beam reshaping unit. At least the first beam reshaping surface (68, 74) has a concavely or convexly curved region (70, 76).

Abstract: An illumination system for a microlithographic projection exposure apparatus includes a light source (1) for generating projection light, a masking arrangement (5) for masking a reticle (R) and a masking objective (6) for imaging the masking arrangement (5) on the reticle (R). A polarizer (10) for generating linearly polarized light is arranged in the masking objective (6). The polarizer (10) may comprise, for example, polarization-selective beam splitting layers (54, 56; 154, 156; 292, 294) arranged at an angle to one another, which are transparent to light in a first polarisation state (68) and reflect light in different second polarisation state (70).

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.

Abstract: A lithographic projection apparatus includes, a radiation source for providing a projection beam of radiation, a support structure for supporting a patterning device, the patterning device serving to pattern the projection beam according to a desired pattern, a substrate table for holding a substrate, a projection system for projecting the patterned beam onto a target portion of the substrate, the radiation source further includes, an illumination system for conditioning the beam of radiation so as to provide a conditioned radiation beam so as to be able to illuminate the patterning device; the illumination system defining a plane of entrance wherein the radiation beam enters the illumination system, and a beam delivery system comprising redirecting elements for redirecting and delivering the projection beam from a radiation source to the illumination system.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.

Abstract: An illumination system for microlithography, has an excimer laser with an emission wavelength, a beam expanding system, a light mixer system and an illumination plane. In the system, an optical element made of a double refracting material is arranged in a light beam cross-section (for example, a Hanle depolarizer) and the thickness of the element varies across the light beam cross-section by a multiple of the emission wavelength. At least one light mixer system is positioned downstream of the optical element. A pseudo-depolarizer having two wedge plates is positioned upstream of the optical element.

Abstract: A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.