Patents by Inventor Mang-Mang Ling
Mang-Mang Ling has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11776806Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: May 12, 2022Date of Patent: October 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Publication number: 20220270871Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: ApplicationFiled: May 12, 2022Publication date: August 25, 2022Applicant: Applied Materials, Inc.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Patent number: 11384428Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.Type: GrantFiled: June 17, 2020Date of Patent: July 12, 2022Assignee: Applied Materials, Inc.Inventors: Mang-Mang Ling, Thomas Kwon, Jong Mun Kim, Chentsau Chris Ying
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Patent number: 11380536Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: May 5, 2020Date of Patent: July 5, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Publication number: 20210351032Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: ApplicationFiled: May 5, 2020Publication date: November 11, 2021Applicant: Applied Materials, Inc.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Keyvan Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Patent number: 11145808Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.Type: GrantFiled: November 12, 2019Date of Patent: October 12, 2021Assignee: Applied Materials, Inc.Inventors: Jong Mun Kim, Minrui Yu, Chando Park, Mang-Mang Ling, Jaesoo Ahn, Chentsau Chris Ying, Srinivas D. Nemani, Mahendra Pakala, Ellie Y. Yieh
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Publication number: 20210234091Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.Type: ApplicationFiled: January 24, 2020Publication date: July 29, 2021Applicant: APPLIED Materials, Inc.Inventors: Jong Mun Kim, Mang-Mang Ling, Soham Asrani, Lin Xue, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20210143323Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.Type: ApplicationFiled: November 12, 2019Publication date: May 13, 2021Inventors: Jong Mun KIM, Minrui YU, Chando PARK, Mang-Mang LING, Jaesoo AHN, Chentsau Chris YING, Srinivas D. NEMANI, Mahendra PAKALA, Ellie Y. YIEH
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Patent number: 10957548Abstract: Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.Type: GrantFiled: November 14, 2019Date of Patent: March 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Mang-Mang Ling, Jong Mun Kim, Chentsau Ying
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Publication number: 20210066064Abstract: Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.Type: ApplicationFiled: August 27, 2020Publication date: March 4, 2021Inventors: He REN, Shi YOU, Hao JIANG, Raymond HUNG, Mehul NAIK, Chentsau Chris YING, Mang-Mang LING, Lin DONG
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Publication number: 20210017641Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.Type: ApplicationFiled: June 17, 2020Publication date: January 21, 2021Inventors: Mang-Mang LING, Thomas KWON, Jong Mun KIM, Chentsau Chris YING
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Publication number: 20200152470Abstract: Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.Type: ApplicationFiled: November 14, 2019Publication date: May 14, 2020Inventors: MANG-MANG LING, JONG MUN KIM, CHENTSAU YING
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Publication number: 20200043734Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber.Type: ApplicationFiled: October 11, 2019Publication date: February 6, 2020Applicant: Applied Materials, Inc.Inventors: Mandar B. Pandit, Mang-Mang Ling, Tom Choi, Nitin K. Ingle
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Patent number: 10490406Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber.Type: GrantFiled: April 10, 2018Date of Patent: November 26, 2019Assignee: Appled Materials, Inc.Inventors: Mandar B. Pandit, Mang-Mang Ling, Tom Choi, Nitin K. Ingle
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Publication number: 20190311900Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber.Type: ApplicationFiled: April 10, 2018Publication date: October 10, 2019Applicant: Applied Materials, Inc.Inventors: Mandar B. Pandit, Mang-Mang Ling, Tom Choi, Nitin K. Ingle
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Patent number: 10424487Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: GrantFiled: October 24, 2017Date of Patent: September 24, 2019Assignee: Applied Materials, Inc.Inventors: Jungmin Ko, Tom Choi, Junghoon Kim, Sean Kang, Mang-Mang Ling
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Patent number: 10354889Abstract: Processing methods may be performed to limit damage of features of a substrate, such as missing fin damage. The methods may include forming a plasma of an inert precursor within a processing region of a processing chamber. Effluents of the plasma of the inert precursor may be utilized to passivate an exposed region of an oxygen-containing material that extends about a feature formed on a semiconductor substrate. A plasma of a hydrogen-containing precursor may also be formed within the processing region. Effluents of the plasma of the hydrogen-containing precursor may be directed, with DC bias, towards an exposed silicon-containing material on the semiconductor substrate. The methods may also include anisotropically etching the exposed silicon-containing material with the plasma effluents of the hydrogen-containing precursor, where the plasma effluents of the hydrogen-containing precursor selectively etch silicon relative to silicon oxide.Type: GrantFiled: July 17, 2017Date of Patent: July 16, 2019Assignee: Applied Materials, Inc.Inventors: Tom Choi, Mandar B. Pandit, Mang-Mang Ling, Nitin K. Ingle
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Publication number: 20190122902Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: ApplicationFiled: October 24, 2017Publication date: April 25, 2019Applicant: Applied Materials, Inc.Inventors: Jungmin Ko, Tom Choi, Junghoon Kim, Sean Kang, Mang-Mang Ling
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Publication number: 20190019690Abstract: Processing methods may be performed to limit damage of features of a substrate, such as missing fin damage. The methods may include forming a plasma of an inert precursor within a processing region of a processing chamber. Effluents of the plasma of the inert precursor may be utilized to passivate an exposed region of an oxygen-containing material that extends about a feature formed on a semiconductor substrate. A plasma of a hydrogen-containing precursor may also be formed within the processing region. Effluents of the plasma of the hydrogen-containing precursor may be directed, with DC bias, towards an exposed silicon-containing material on the semiconductor substrate. The methods may also include anisotropically etching the exposed silicon-containing material with the plasma effluents of the hydrogen-containing precursor, where the plasma effluents of the hydrogen-containing precursor selectively etch silicon relative to silicon oxide.Type: ApplicationFiled: July 17, 2017Publication date: January 17, 2019Applicant: Applied Materials, Inc.Inventors: Tom Choi, Mandar B. Pandit, Mang-Mang Ling, Nitin K. Ingle
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Publication number: 20180025900Abstract: Methods of removing contamination from the surface of a substrate are described. The etch selectively removes alkali metals and alkali earth metals from substrates. The alkali metals may include sodium, lithium, rubidium or potassium and the alkali earth metals may include calcium. For example, the etch may remove contaminants by generating and then desorbing volatile chemical species from the substrate. A hydrogen-and-oxygen-containing precursor or combination of precursors is flowed into a remote plasma to form plasma effluents. The plasma effluents are then flowed into the substrate processing region to react with the substrate and remove an alkali metal and/or an alkali earth metal from the surface of the substrate. No local plasma excites the plasma effluents in embodiments.Type: ApplicationFiled: July 22, 2016Publication date: January 25, 2018Applicant: Applied Materials, Inc.Inventors: Soonam Park, Mang-Mang Ling, Toan Q. Tran, Dmitry Lubomirsky