Patents by Inventor Mang-Mang Ling
Mang-Mang Ling has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9543163Abstract: Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.Type: GrantFiled: October 21, 2013Date of Patent: January 10, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Mang-Mang Ling, Jungmin Ko, Sean S. Kang, Jeremiah T. Pender, Srinivas D. Nemani, Bradley Howard
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Publication number: 20150200042Abstract: A portion of the ultra-low k dielectric layer over a substrate is modified using a downstream plasma comprising a first chemistry. The modified portion of the ultra-low k dielectric layer is etched using the downstream plasma comprising a second chemistry. The downstream plasma is generated using a remote plasma source.Type: ApplicationFiled: January 10, 2014Publication date: July 16, 2015Applicant: Applied Materials, Inc.Inventors: Mang Mang Ling, Sean S. Kang, Jeremiah T P Pender, Srinivas D. Nemani, Bradley J. Howard
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Patent number: 9059398Abstract: Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer.Type: GrantFiled: January 25, 2013Date of Patent: June 16, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Jisoo Kim, Mang-Mang Ling, Khoi Doan, Chi Hong Ching, Srinivas D. Nemani
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Publication number: 20150079798Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.Type: ApplicationFiled: September 17, 2013Publication date: March 19, 2015Inventors: Mang-Mang LING, Sean S. KANG, Jeremiah T. P. PENDER, Srinivas D. NEMANI, Bradley HOWARD
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Patent number: 8980758Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.Type: GrantFiled: September 17, 2013Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Mang-Mang Ling, Sean S. Kang, Jeremiah T. P. Pender, Srinivas D. Nemani, Bradley Howard
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Publication number: 20150056814Abstract: Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.Type: ApplicationFiled: October 21, 2013Publication date: February 26, 2015Inventors: Mang-Mang LING, Jungmin KO, Sean S. KANG, Jeremiah T. PENDER, Srinivas D. NEMANI, Bradley HOWARD
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Patent number: 8932959Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.Type: GrantFiled: March 6, 2013Date of Patent: January 13, 2015Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Mang-mang Ling, Jeremiah T. Pender, Kartik Ramaswamy, Andrew Nguyen, Sergey G. Belostotskiy, Sumit Agarwal
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Publication number: 20140357083Abstract: Embodiments of methods and an apparatus for utilizing a directed self-assembly (DSA) process on block copolymers (BCPs) to form a defect-free photoresist layer for feature transfer onto a substrate are provided. In one embodiment, a method for performing a dry development process includes transferring a substrate having a layer of block copolymers disposed thereon into an etching processing chamber, wherein at least a first type and a second type of polymers comprising the block copolymers are aggregated into a first group of regions and a second group of regions on the substrate, supplying an etching gas mixture including at least a carbon containing gas into the etching processing chamber, and predominately etching the second type of the polymers disposed on the second groups of regions on the substrate in the presence of the etching gas mixture.Type: ApplicationFiled: May 21, 2014Publication date: December 4, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Mang-Mang LING, Lina ZHU, Nancy FUNG, Kwang-Soo KIM, Sean S. KANG, Srinivas D. NEMANI
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Publication number: 20140248718Abstract: Chemical modification of non-volatile magnetic random access memory (MRAM) magnetic tunnel junctions (MTJs) for film stack etching is described. In an example, a method of etching a MTJ film stack includes modifying one or more layers of the MTJ film stack with a phosphorous trifluoride (PF3) source to provide modified regions of the MTJ film stack. The modified regions of the MTJ film stack are removed by a plasma etch process.Type: ApplicationFiled: February 18, 2014Publication date: September 4, 2014Inventors: Jisoo Kim, Mang-mang Ling, Khoi Doan, Srinivas D. Nemani
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Publication number: 20140170856Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.Type: ApplicationFiled: March 6, 2013Publication date: June 19, 2014Inventors: Srinivas D. Nemani, Mang-mang Ling, Jeremiah T. Pender, Kartik Ramaswamy, Andrew Nguyen, Sergey G. Belostotskiy, Sumit Agarwal
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Publication number: 20140038311Abstract: Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications.Type: ApplicationFiled: January 25, 2013Publication date: February 6, 2014Inventors: Jisoo Kim, Mang-Mang Ling, Khoi Doan, Chi Hong Ching, Srinivas D. Nemani
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Patent number: 7910736Abstract: A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of theType: GrantFiled: May 4, 2007Date of Patent: March 22, 2011Assignees: BASF Aktiengesellschaft, The Board of Trustees of the Lenand Stanford Junior UniversityInventors: Martin Koenemann, Peter Erk, Zhenan Bao, Mang-Mang Ling
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Publication number: 20090293907Abstract: Methods for cleaning a substrate are provided. In one embodiment, the method includes depositing a polymer on a substrate. A cleaning gas is provided to clean a frontside, a bevel edge, and a backside of the substrate. The cleaning gas may include various reactive chemicals such as H2 and N2 in one embodiment. In another embodiment, the cleaning gas may include H2 and H2O. Plasma is initiated from the cleaning gas and used to remove polymer that formed on a bevel edge, backside, or frontside of the substrate during semiconductor processing.Type: ApplicationFiled: October 6, 2008Publication date: December 3, 2009Inventors: Nancy Fung, Siyi Li, Ying Rui, Walter R. Merry, Anchel Sheyner, Kathryn Keswick, Shing-Li Sung, Mang-Mang Ling, Chia-Ling Kao, Wei-Te Wu, Kang-Lie Chiang
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Publication number: 20080134961Abstract: Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of desorption is controlled at each surface region and at the substrate to grow at least one organic semiconducting single crystal at each surface region from a vapor-phase organic material. This control is effected, for example, before and/or during the introduction of vapor-phase organic material to the surface regions. In some embodiments, the surface regions include an organic film such as octadecyltriethoxysilane (OTS), and in other embodiments, the surface regions include carbon nanotube bundles, either of which can be implemented to exhibit a surface roughness and/or other characteristics that facilitate selective crystal nucleation.Type: ApplicationFiled: October 31, 2007Publication date: June 12, 2008Inventors: Zhenan Bao, Alejandro L. Briseno, Colin C. Reese, Stefan C. B. Mannsfeld, Shuhong Liu, Mang-Mang Ling
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Publication number: 20080090325Abstract: A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of thType: ApplicationFiled: October 17, 2006Publication date: April 17, 2008Applicants: BASF Aktiengesellschaft, Stanford UniversityInventors: Martin KOENEMANN, Peter Erk, Zhenan Bao, Mang Mang Ling
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Publication number: 20080054258Abstract: The present invention relates to the use of perylene diimide derivatives as air-stable n-type organic semiconductors.Type: ApplicationFiled: August 7, 2007Publication date: March 6, 2008Applicants: BASF Aktiengesellschaft, The Board of Trustees/Leland Stanford Jr.Univ.Inventors: Martin KOENEMANN, Peter Erk, Marcos Gomez, Zhenan Bao, Mang-Mang Ling
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Publication number: 20080017850Abstract: A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of theType: ApplicationFiled: May 4, 2007Publication date: January 24, 2008Applicants: BASF Aktiengesellschaft, The Board of Trustees of the L. Stanford Jr. Univ.Inventors: Martin Koenemann, Peter Erk, Zhenan Bao, Mang-Mang Ling
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Publication number: 20080009092Abstract: The present invention relates to the use of chlorinated copper phthalocyanines as air-stable n-type organic semiconductors.Type: ApplicationFiled: July 6, 2006Publication date: January 10, 2008Applicant: BASF AktiengesellschaftInventors: Martin Koenemann, Peter Erk, Marcos Gomez, Mang-Mang Ling, Zhenan Bao
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Publication number: 20070259475Abstract: A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, oneType: ApplicationFiled: January 3, 2007Publication date: November 8, 2007Applicant: BASF AktiengesellschaftInventors: Martin Konemann, Peter Erk, Mang-Mang Ling, Zhenan Bao