Patents by Inventor Manny Ma

Manny Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for operating an electrostatic discharge protection circuit
    Patent number: 5805009
    Abstract: An electrostatic discharge (ESD) protection circuit includes two stages. A first stage is operatively coupled to a metal bonding pad. This first stage is an npn transistor having a low resistance fusible element which has a fast response time. A second stage is operatively coupled in series to the first stage. The second stage provides a high-resistance path to protect the npn transistor after the fusible element has fused to into a high resistance voltage path. In addition, a semiconductor device having internal circuitry protected by this two stage ESD protection circuit is provided. The ESD protection circuit is operatively coupled between the bonding pad which is located external to the semiconductor device and the internal circuitry.
    Type: Grant
    Filed: May 21, 1997
    Date of Patent: September 8, 1998
    Assignee: Micron Technology, Inc.
    Inventors: Stephen L. Casper, Manny Ma
  • Two-stage fusible electrostatic discharge protection circuit
    Patent number: 5656967
    Abstract: An electrostatic discharge (ESD) protection circuit includes two stages. A first stage is operatively coupled to a metal bonding pad. This first stage is an npn transistor having a low resistance fusible element which has a fast response time. A second stage is operatively coupled in series to the first stage. The second stage provides a high-resistance path to protect the npn transistor after the fusible element has fused to into a high resistance voltage path. In addition, a semiconductor device having internal circuitry protected by this two stage ESD protection circuit is provided. The ESD protection circuit is operatively coupled between the bonding pad which is located external to the semiconductor device and the internal circuitry.
    Type: Grant
    Filed: August 7, 1995
    Date of Patent: August 12, 1997
    Assignee: Micron Technology, Inc.
    Inventors: Stephen L. Casper, Manny Ma