Abstract: A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A magnetic memory cell with symmetric switching characteristics includes a sense layer and a reference layer coupled to the sense layer through a barrier layer. The magnetic memory cell further includes an additional reference layer coupled to the sense layer through a spacer layer. The additional reference layer is formed so that a set of demagnetization and coupling fields from the additional reference layer balance a set of demagnetization and coupling fields from the reference layer.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A magnetic memory with enhanced half-select margin includes an array of magnetic memory cells each having a data storage layer with an easy axis and an array of conductors each having an angle of orientation with respect to the easy axes that is preselected to enhance half-select margin in the magnetic memory. The angle of orientation is such that the longitudinal write field is enhanced and the perpendicular write field is minimized in a selected memory cell. The magnetic memory cells optionally includes a structured data storage layer including a control layer that minimizes the likelihood of half-select switching in the unselected magnetic memory cells.

Abstract: In a Magnetic Random Access Memory device, a magnetic field bias is applied to half-selected memory cells during a write operation. The magnetic field bias suppresses the inadvertent switching of the half-selected memory cells.

Abstract: A magnetic memory cell including a data storage layer having an easy axis and a reference layer having an orientation of magnetization which is pinned in a direction that is off-axis with respect to the easy axis. This structure increases the signal obtainable during read operation on the magnetic memory cell notwithstanding the effects of magnetizations in the edge domains of the data storage layer. In addition, this structure allows high MRAM densities to be achieved using square-shaped memory cell structures.

Abstract: A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.

Abstract: Providing a magnetic head with a yoke and a gap structure coupled to a substrate that is positioned above a magnetic medium. The gap structure includes one or more lips, a first and a second ferromagnetic pole, and a magnetoresistive element (MRE). The magnetoresistive element is removed from the air-bearing surface of the magnetic head. For the embodiment with two lips, the two lips define a head gap. Each ferromagnetic pole is connected to one lip. The two poles are separated by a distance greater than the length of the gap, and each pole has a thickness that is greater than the thickness of each lip. The MRE is substantially coupled magnetically, but not electrically to the two poles at a location where the two poles are separated by a distance greater than the length of the gap.

Abstract: A planar silicon magnetoresistive read/write head has separate read and write gaps that can be individually optimized. The write gap includes a write gap shunt that suppresses signals that are read across the write gap without interfering with the ability of the head to generate write signals at the write gap. The head retains both the advantages of removing the magnetoresistive element from the air bearing surface to avoid wear, shorting, and corrosion, and to eliminate cross-track asymmetry, associated with dual gap magnetoresistive heads; and the advantages of low cost fabrication and high area density, associated with silicon planar head structures.

Abstract: A read/write head for a hard disk provides both a magneto-resistive read function and an inductive write function in a common gap. The inductive write function is provided by a current carrying coil which is magnetically coupled to top and bottom shields or pole tips which in turn induce the magnetic fields required for writing on the disk. Mutually biasing magneto-resistive read sensor are located between the shields, which serve to improve the resolution of the read function. During a read operation, read/write circuitry maintains a current in the coil which cancels, at least partially, magnetic fields induced by sensing and bias currents in the magneto-resistive heads which might other perturb information stored in the medium. This arrangement provides a read/write head with improved read/write resolution as required by emerging high density storage media in compact formats.