Patents by Inventor Manoj K. Jain
Manoj K. Jain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120368Abstract: A method of fabricating an integrated circuit includes etching trenches in a first surface of a semiconductor layer. A trench dielectric layer is formed over the first surface and over bottoms and sidewalls of the trenches and a doped polysilicon layer is formed over the trench dielectric layer and within the trenches. The doped polysilicon layer is patterned to form a polysilicon bridge that connects to the polysilicon within the filled trenches and a blanket implant of a first dopant is directed to the polysilicon bridge and to the first surface. The blanket implant forms a contact region extending from the first surface into the semiconductor layer.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Inventors: Jing Hu, ZHI PENG Feng, Chao Zuo, Dongsheng Liu, Yunlong Liu, Manoj K Jain, Shengpin Yang
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Patent number: 11888021Abstract: A method of fabricating an integrated circuit includes etching trenches in a first surface of a semiconductor layer. A trench dielectric layer is formed over the first surface and over bottoms and sidewalls of the trenches and a doped polysilicon layer is formed over the trench dielectric layer and within the trenches. The doped polysilicon layer is patterned to form a polysilicon bridge that connects to the polysilicon within the filled trenches and a blanket implant of a first dopant is directed to the polysilicon bridge and to the first surface. The blanket implant forms a contact region extending from the first surface into the semiconductor layer.Type: GrantFiled: September 29, 2021Date of Patent: January 30, 2024Assignee: Texas Instruments IncorporatedInventors: Jing Hu, Zhi Peng Feng, Chao Zuo, Dongsheng Liu, Yunlong Liu, Manoj K Jain, Shengpin Yang
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Publication number: 20220416014Abstract: In a described example, a method of forming a capacitor includes forming a doped polysilicon layer over a semiconductor substrate. The method also includes forming a dielectric layer on the doped polysilicon layer. The method also includes forming an undoped polysilicon layer on the dielectric layer.Type: ApplicationFiled: October 27, 2021Publication date: December 29, 2022Inventors: Furen Lin, Yunlong Liu, Zhi Peng Feng, Rui Liu, Rui Song, Manoj K. Jain
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Publication number: 20220406885Abstract: A method of fabricating an integrated circuit includes etching trenches in a first surface of a semiconductor layer. A trench dielectric layer is formed over the first surface and over bottoms and sidewalls of the trenches and a doped polysilicon layer is formed over the trench dielectric layer and within the trenches. The doped polysilicon layer is patterned to form a polysilicon bridge that connects to the polysilicon within the filled trenches and a blanket implant of a first dopant is directed to the polysilicon bridge and to the first surface. The blanket implant forms a contact region extending from the first surface into the semiconductor layer.Type: ApplicationFiled: September 29, 2021Publication date: December 22, 2022Inventors: Jing Hu, Zhi Peng Feng, Chao Zuo, Dongsheng Liu, Yunlong Liu, Manoj K. Jain, Shengpin Yang
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Publication number: 20220245086Abstract: In general, embodiments of the present invention provide methods, apparatus, systems, computing devices, computing entities, and/or the like for performing scalable dynamic data transmissions. Certain embodiments of the present invention utilize systems, methods, and computer program products that perform scalable dynamic data transmission using structured data responses that include structured response extensions, where the structured response extensions may include dynamic extension response fields generated based on a structured request header of a corresponding structured data request.Type: ApplicationFiled: January 29, 2021Publication date: August 4, 2022Inventors: Manoj K. Jain, Udai K. Raju, Sofia Farzan Fayazdeen, Julius Cardozo, Meredith A. Hardiman, Sandesh Jajoo, Diana Lisi, Jacqueline H. Goldfinger
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Patent number: 10811312Abstract: A method of fabricating an integrated circuit (IC) chip is disclosed. The method starts with opening a window on a first surface of the IC chip through a passivation overcoat to expose the copper metallization layer. The window has sidewalls and a bottom that is adjacent the copper metallization layer. The method continues with depositing a barrier conductive stack on the passivation overcoat and exposed portions of the copper metallization layer, then depositing a sacrificial conductive stack on the barrier conductive stack. The sacrificial conductive stack has a thickness between 50 ? and 500 ?. The first surface of the semiconductor chip is polished to remove the sacrificial conductive stack and the barrier conductive stack from the surface of the passivation overcoat.Type: GrantFiled: October 23, 2019Date of Patent: October 20, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Manoj K. Jain
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Publication number: 20200058547Abstract: A method of fabricating an integrated circuit (IC) chip is disclosed. The method starts with opening a window on a first surface of the IC chip through a passivation overcoat to expose the copper metallization layer. The window has sidewalls and a bottom that is adjacent the copper metallization layer. The method continues with depositing a barrier conductive stack on the passivation overcoat and exposed portions of the copper metallization layer, then depositing a sacrificial conductive stack on the barrier conductive stack. The sacrificial conductive stack has a thickness between 50 ? and 500 ?. The first surface of the semiconductor chip is polished to remove the sacrificial conductive stack and the barrier conductive stack from the surface of the passivation overcoat.Type: ApplicationFiled: October 23, 2019Publication date: February 20, 2020Inventor: Manoj K. Jain
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Patent number: 10490448Abstract: A method of fabricating an integrated circuit (IC) chip is disclosed. The method starts with opening a window on a first surface of the IC chip through a passivation overcoat to expose the copper metallization layer. The window has sidewalls and a bottom that is adjacent the copper metallization layer. The method continues with depositing a barrier conductive stack on the passivation overcoat and exposed portions of the copper metallization layer, then depositing a sacrificial conductive stack on the barrier conductive stack. The sacrificial conductive stack has a thickness between 50 ? and 500 ?. The first surface of the semiconductor chip is polished to remove the sacrificial conductive stack and the barrier conductive stack from the surface of the passivation overcoat.Type: GrantFiled: December 29, 2017Date of Patent: November 26, 2019Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Manoj K. Jain
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Patent number: 10484357Abstract: Example embodiments of the present invention provide a method, an apparatus, and a computer program product for brokering establishment of a trusted relationship between a first domain and a second domain. The method includes receiving, from a first domain, a request to establish a trusted relationship with a second domain and brokering establishment of the trusted relationship between the first domain and the second. Other example embodiments include brokering authenticated access for a client in the first domain to a resource in the second domain according to the established trusted relationship.Type: GrantFiled: March 11, 2016Date of Patent: November 19, 2019Assignee: EMC IP Holding Company LLCInventor: Manoj K. Jain
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Publication number: 20190206730Abstract: A method of fabricating an integrated circuit (IC) chip is disclosed. The method starts with opening a window on a first surface of the IC chip through a passivation overcoat to expose the copper metallization layer. The window has sidewalls and a bottom that is adjacent the copper metallization layer. The method continues with depositing a barrier conductive stack on the passivation overcoat and exposed portions of the copper metallization layer, then depositing a sacrificial conductive stack on the barrier conductive stack. The sacrificial conductive stack has a thickness between 50 ? and 500 ?. The first surface of the semiconductor chip is polished to remove the sacrificial conductive stack and the barrier conductive stack from the surface of the passivation overcoat.Type: ApplicationFiled: December 29, 2017Publication date: July 4, 2019Inventor: Manoj K. Jain
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Patent number: 9865555Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.Type: GrantFiled: March 9, 2017Date of Patent: January 9, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Manoj K. Jain
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Publication number: 20170179053Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.Type: ApplicationFiled: March 9, 2017Publication date: June 22, 2017Inventor: Manoj K. JAIN
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Patent number: 9627334Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.Type: GrantFiled: September 28, 2016Date of Patent: April 18, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Manoj K. Jain
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Publication number: 20170018516Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Inventor: Manoj K. JAIN
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Patent number: 9478510Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.Type: GrantFiled: December 3, 2014Date of Patent: October 25, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Manoj K. Jain
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Patent number: 9305998Abstract: Deposition of lead-zirconium-titanate (PZT) ferroelectric material over iridium metal, in the formation of a ferroelectric capacitor in an integrated circuit. The capacitor is formed by the deposition of a lower conductive plate layer having iridium metal as a top layer. The surface of the iridium metal is thermally oxidized, prior to or during the deposition of the PZT material. The resulting iridium oxide at the surface of the iridium metal is very thin, on the order of a few nanometers, which allows the deposited PZT to nucleate according to the crystalline structure of the iridium metal rather than that of iridium oxide. The iridium oxide is also of intermediate stoichiometry (IrO2-x), and reacts with the PZT material being deposited.Type: GrantFiled: February 7, 2014Date of Patent: April 5, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Bhaskar Srinivasan, Eric H. Warninghoff, Alan Merriam, Haowen Bu, Brian E. Goodlin, Manoj K. Jain
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Publication number: 20150179592Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.Type: ApplicationFiled: December 3, 2014Publication date: June 25, 2015Inventor: Manoj K. JAIN
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Patent number: 8971319Abstract: A system and method for enabling routing of data on a network based on a portion of data accessed from a non-network enabled device is disclosed. The technology includes a method for enabling routing of data on a network based on a portion of data accessed from a non-network enabled device. The method includes detecting a non-network enabled device locally coupled to a first computer system, the first computer system coupled to the network. The method further includes enabling routing of data through the non-network enabled device to a second computer system coupled to the network by using the first computer system as a communication interface between the non-network enabled device and the second computer system wherein the second computer system is automatically identified based on recognizing a portion of the data as a routing destination.Type: GrantFiled: January 9, 2012Date of Patent: March 3, 2015Assignee: Microsoft CorporationInventors: Manoj K. Jain, Srinivasulu Grandhi, Ananda Sarkar
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Publication number: 20140227805Abstract: Deposition of lead-zirconium-titanate (PZT) ferroelectric material over iridium metal, in the formation of a ferroelectric capacitor in an integrated circuit. The capacitor is formed by the deposition of a lower conductive plate layer having iridium metal as a top layer. The surface of the iridium metal is thermally oxidized, prior to or during the deposition of the PZT material. The resulting iridium oxide at the surface of the iridium metal is very thin, on the order of a few nanometers, which allows the deposited PZT to nucleate according to the crystalline structure of the iridium metal rather than that of iridium oxide. The iridium oxide is also of intermediate stoichiometry (IrO2-x), and reacts with the PZT material being deposited.Type: ApplicationFiled: February 7, 2014Publication date: August 14, 2014Applicant: Texas Instruments IncorporatedInventors: Bhaskar Srinivasan, Eric H. Warninghoff, Alan Merriam, Haowen Bu, Brian E. Goodlin, Manoj K. Jain
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Patent number: 8778700Abstract: An integrated circuit containing a FeCap array. The FeCap array is at least partially surrounded on the sides by hydrogen barrier walls and on the top by a hydrogen barrier top plate. A method for at least partially enclosing a FeCap array with hydrogen barrier walls and a hydrogen barrier top plate.Type: GrantFiled: February 19, 2013Date of Patent: July 15, 2014Assignee: Texas Instruments IncorporatedInventors: Kezhakkedath R. Udayakumar, Scott R. Summerfelt, Ted S. Moise, Manoj K. Jain