Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

Abstract: A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.

Abstract: A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.

Abstract: An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.

Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

Abstract: A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.

Abstract: The present invention provides a method of fabricating a beam formatting diode laser using a surface-emitting distributed feedback (SE-DFB) laser array (SELA), instead of edge-emitting diodes that provides a brighter diode and results in simple and few optical components to reduce the complexity and cost of solid-state laser pump modules and direct-diode applications.

Abstract: The present invention provides a wide temperature range (WiTR) operating wavelength-narrowed and wavelength-stabilized semiconductor laser having a wide bandwidth gain medium imbedded in a waveguide layer comprising a plurality of quantum dots or quantum wells wherein each quantum dot or quantum well has a different gain peak-wavelength that provides gain at different temperatures as the junction temperature of the laser changes. Therefore, the wavelength defined by an appropriate grating to lock the wavelength and narrow the emission-bandwidth can be realized over a much wider operating temperature range than possible with gain medium that comprises just single quantum well or quantum dot or a plurality of quantum wells or quantum dots that have the same gain peak-wavelength.

Abstract: A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system, the n-type semiconductor layer is formed from a second material system, the p-type semiconductor layer is formed from a third material system, and the quantum well is formed from a fourth material system. The second material system is different from the third material system. The second material system and the third material system are selected such that there is an increase in the rate of recombinations of the electrons from the n-type semiconductor layer and the holes from the p-type semiconductor layer in the quantum well. This results in a lower turn-on voltage for the semiconductor laser diode.

Abstract: A second-order multi-mode partial distributed feedback (p-DFB) laser having increased electrical-to-optical power conversion efficiency, stabilized wavelength and narrowed emission linewidth. The laser includes an abbreviated grating housed in the laser cavity that is separated from both the front-end and the back-end of the laser facets.

Abstract: The invention provides a grating for a distributed feedback laser having decreased diffraction loss with reduced +/?1 order diffraction and scattering loss resulting from the reduced imperfections in the grating fabrication. In various embodiments, the grating has a low duty cycle wherein the ratio of the length of the low-index portion ‘a’ to the length of the pitch of the grating ‘b’ is less than 0.5. Further, in some preferred embodiments, the invention includes a laser, the laser comprising a distributed feedback laser wherein the laser includes a grating having less diffraction and less scattering loss. In various exemplary embodiments, the grating is further a partial grating, thereby providing increased efficiency resulting from a decrease in first-order diffraction loss due to the grating being separated from the front and rear facets and in some exemplary embodiments being situated at the area of lowest electric filed.

Abstract: A second-order multi-mode partial distributed feedback (p-DFB) laser having increased electrical-to-optical power conversion efficiency, stabilized wavelength and narrowed emission linewidth. The laser includes an abbreviated grating housed in the laser cavity that is separated from both the front-end and the back-end of the laser facets.

Abstract: A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system, the n-type semiconductor layer is formed from a second material system, the p-type semiconductor layer is formed from a third material system, and the quantum well is formed from a fourth material system. The second material system is different from the third material system. The second material system and the third material system are selected such that there is an increase in the rate of recombinations of the electrons from the n-type semiconductor layer and the holes from the p-type semiconductor layer in the quantum well. This results in a lower turn-on voltage for the semiconductor laser diode.