Abstract: An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.

Abstract: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

Abstract: An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: Systems and methods for reverse pulsing are described. One of the systems includes a controller, first and second source radio frequency (RF) generators, and first and second bias RF generators. The controller controls the first source RF generator to generate a first source pulsed signal, and controls the second source RF generator to generate a second source pulsed signal. The system includes a first match circuit that receives the first and second source pulsed signals and combines the first and second source pulsed signals. The controller controls the first bias RF generator to generate a first bias pulsed signal, and controls the second bias RF generator to generate a second bias pulsed signal. The system includes a second match circuit that receives the first and second bias pulsed signals and combines the first and second bias pulsed signals into a combined bias signal.

Abstract: A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

Abstract: A direct drive system for providing RF power to a component of a substrate processing system includes a direct drive circuit including a switch and configured to supply RF power to the component. A switch protection module is configured to monitor a load current and a load voltage in a processing chamber, calculate load resistance based on the load current and the load voltage, compare the load resistance to a first predetermined load resistance, and adjust at least one of an RF power limit and an RF current limit of the direct drive circuit based on the comparison.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A lid assembly for a processing chamber in a substrate processing system includes a dielectric window. The dielectric window includes an upper portion having flat upper and lower surfaces. The lower surface is a plasma-facing surface of the dielectric window. A lower portion of the dielectric window is cylindrical and extends downward from the lower surface and an outer diameter of the lower portion at least one of is aligned with a gap between inner and outer coils arranged above the dielectric window and overlaps one of the inner and outer coils.

Abstract: A substrate processing system includes a drive circuit, an RF reference measuring circuit, and a make-break connector. The drive circuit generates an RF drive signal at a first RF frequency. The RF reference measuring circuit includes an LC circuit having an input impedance and an output impedance. An output of the LC circuit connects to an RF power meter and a dummy load. The make-break connector connects the drive circuit to one of the RF reference measuring circuit and a processing chamber load including a component of the substrate processing system. An output impedance of the drive circuit matches an impedance of an input impedance of the LC circuit. The output impedance of the drive circuit does not match impedances of the RF power meter and the dummy load. The LC circuit matches the impedance of the drive circuit to the RF power meter and the dummy load.

Abstract: A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.

Abstract: A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.

Abstract: A lift pin assembly for a lift pin of a plasma processing apparatus is provided. The lift pin assembly includes a pin housing defining an opening into which a lift pin extends. The pin housing is positioned such that the opening is aligned with an opening defined by an electrostatic chuck. The assembly includes a pin height adjustment member partially positioned within the opening defined by the pin housing. The pin height adjustment member is movable along an axis in a first direction and a second direction to move the lift pin into and out of the opening defined by the electrostatic chuck. The assembly includes a pin holder assembly at least partially positioned within an opening defined by the pin height adjustment member. The pin holder assembly is configured to hold the lift pin such that the lift pin is aligned with the opening defined by the electrostatic chuck.

Abstract: An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.

Abstract: A plasma processing apparatus including a processing chamber having one or more sidewalls and a dome is provided. The plasma processing apparatus includes a workpiece support disposed in the processing chamber configured to support a workpiece during processing, an induction coil assembly for producing a plasma in the processing chamber, a Faraday shield disposed between the induction coil assembly and the dome, the Faraday shield comprising an inner portion and an outer portion, and a thermal management system. The thermal management system including one or more heating elements configured to heat the dome, and one or more thermal pads disposed between an outer surface of the dome and the heating elements, wherein the one or more thermal pads are configured to facilitate heat transfer between the one or more heating elements and the dome. Thermal management systems and methods for processing workpieces are also provided.

Abstract: A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.

Abstract: Matching circuitry is disclosed for power generation in a plasma processing apparatus or other application. Matching circuitry is provided in a unitary physical enclosure and is configured to provide impedance matching at multiple different frequencies. For example, in a dual frequency implementation, first and second RF generators can provide electromagnetic energy at first and second respective frequencies in a continuous mode or a pulsed mode to matching circuitry that includes first and second circuit portions. The first circuit portion can include one or more first tuning elements configured to receive RF power at a first frequency and provide impedance matching for a first ICP load (e.g., a primary inductive element). The second circuit portion can include one or more second tuning elements configured to receive RF power at a second different frequency and provide impedance matching for a second ICP load (e.g., a secondary inductive element).

Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.