Patents by Inventor Marc Allen SULFRIDGE
Marc Allen SULFRIDGE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145515Abstract: An integrated circuit package (34, 34?, 34?) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).Type: ApplicationFiled: April 27, 2022Publication date: May 2, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Mario M. PELELLA, Chandrasekharan KOTHANDARAMAN, Marc Allen SULFRIDGE, Yusheng LIN, Larry Duane KINSMAN
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Patent number: 11942498Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.Type: GrantFiled: February 22, 2022Date of Patent: March 26, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen Sulfridge, Byounghee Lee, Ulrich Boettiger
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Publication number: 20240055537Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.Type: ApplicationFiled: October 25, 2023Publication date: February 15, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen SULFRIDGE, Anne DEIGNAN, Nader JEDIDI, Michael Gerard KEYES
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Publication number: 20240038800Abstract: An image sensor may include a sensor chip that is bonded to an application-specific integrated circuit (ASIC) chip. A bond pad for the image sensor may be formed in the ASIC chip and exposed through a trench in the sensor chip. The image sensor may include a conductive light shield at a periphery of the image sensor to shield optically black pixels. An opaque layer may be formed over the conductive light shield to mitigate reflections off the conductive light shield. An anti-reflective layer may be formed over the pixel array. The anti-reflective layer may have a different thickness over the pixel array than in the trench for the bond pad.Type: ApplicationFiled: February 22, 2023Publication date: February 1, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen SULFRIDGE, William CROFOOT, Swarnal BORTHAKUR
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Patent number: 11837670Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.Type: GrantFiled: October 21, 2020Date of Patent: December 5, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen Sulfridge, Anne Deignan, Nader Jedidi, Michael Gerard Keyes
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Patent number: 11728360Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.Type: GrantFiled: January 14, 2022Date of Patent: August 15, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Larry Duane Kinsman, Swarnal Borthakur, Marc Allen Sulfridge, Scott Donald Churchwell, Brian Vaartstra
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Publication number: 20230253513Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.Type: ApplicationFiled: April 3, 2023Publication date: August 10, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc Allen SULFRIDGE, Andrew Eugene PERKINS
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Publication number: 20230230987Abstract: Imaging systems, and image pixels and related methods. At least one example is an image sensor comprising a plurality of image pixels. Each image pixel may comprise: a color router defining a router collection area on an upper surface; a first photosensitive region beneath the color router; a second photosensitive region beneath the color router; and a third photosensitive region beneath the color router. The color router may be configured to route photons of a first wavelength received at the router collection area to the first photosensitive region, route photons of a second wavelength received at the router collection area to the second photosensitive region, and route photons of a third wavelength received at the router collection area to the third photosensitive region.Type: ApplicationFiled: December 14, 2022Publication date: July 20, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Byounghee LEE, Swarnal BORTHAKUR, Marc Allen SULFRIDGE
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Publication number: 20230215960Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.Type: ApplicationFiled: February 24, 2023Publication date: July 6, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc Allen SULFRIDGE
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Publication number: 20230197750Abstract: An imaging device may include single-photon avalanche diodes (SPADs). Each SPAD may be overlapped by multiple microlenses. The microlenses over each SPAD may include first microlenses having a first size over a central portion of the SPAD and second microlenses having a second size that is greater than the first size over a peripheral area of the SPAD. The second microlenses may be spherical microlenses or cylindrical microlenses. The first microlenses may be aligned with underlying light scattering structures to improve the efficiency of the light scattering structures. The second microlenses may partially overlap isolation structures to direct light away from the isolation structures and towards the SPAD.Type: ApplicationFiled: December 17, 2021Publication date: June 22, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen SULFRIDGE, Andrew Eugene PERKINS
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Publication number: 20230154959Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.Type: ApplicationFiled: January 4, 2023Publication date: May 18, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen SULFRIDGE, Swarnal BORTHAKUR, Nathan Wayne CHAPMAN
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Patent number: 11652176Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.Type: GrantFiled: September 3, 2020Date of Patent: May 16, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Allen Sulfridge, Andrew Eugene Perkins
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Patent number: 11626440Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.Type: GrantFiled: November 14, 2019Date of Patent: April 11, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen Sulfridge, Swarnal Borthakur, Nathan Wayne Chapman
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Patent number: 11616152Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.Type: GrantFiled: September 14, 2020Date of Patent: March 28, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Allen Sulfridge
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Publication number: 20220367534Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.Type: ApplicationFiled: May 13, 2021Publication date: November 17, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, David T. PRICE, Marc Allen SULFRIDGE, Richard MAURITZSON, Michael Gerard KEYES, Ryan RETTMANN, Kevin MCSTAY
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Publication number: 20220181373Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.Type: ApplicationFiled: February 22, 2022Publication date: June 9, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen SULFRIDGE, Byounghee LEE, Ulrich BOETTIGER
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Patent number: 11342369Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.Type: GrantFiled: February 22, 2019Date of Patent: May 24, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Larry Duane Kinsman, Swarnal Borthakur, Marc Allen Sulfridge, Scott Donald Churchwell, Brian Vaartstra
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Publication number: 20220139982Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.Type: ApplicationFiled: January 14, 2022Publication date: May 5, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Larry Duane KINSMAN, Swarnal BORTHAKUR, Marc Allen SULFRIDGE, Scott Donald CHURCHWELL, Brian VAARTSTRA
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Patent number: 11289524Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.Type: GrantFiled: May 3, 2019Date of Patent: March 29, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Marc Allen Sulfridge, Byounghee Lee, Ulrich Boettiger
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Publication number: 20210175380Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.Type: ApplicationFiled: September 14, 2020Publication date: June 10, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc Allen SULFRIDGE