Abstract: A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.

Abstract: A method for forming curved image sensors may include applying positive pressure to the face of an image sensor, forcing the image sensor to adhere the curved surface of a substrate. The pressure may be applied to the face of the image sensor in a variety of ways, including using pneumatic pressure, hydraulic pressure, or pressure from an elastic or inelastic solid. Processing may occur on either a single image sensor die or an image sensor wafer. When an image sensor wafer is processed, a substrate may be used that has a number of cavities defined by respective curved surfaces with each cavity corresponding to a respective image sensor. When pressure is applied to the image sensor, the image sensor may deform until the curvature of the image sensor matches the curvature of the curved surface of the underlying substrate.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for an image sensor with a thermal equalizer for distributing heat. The method and apparatus may comprise a thermal equalizer disposed between a sensor die and a circuit die to prevent uneven heating of the pixels in the sensor die. The method and apparatus may comprise a thermal equalizer integrated within the circuit die.

Abstract: A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.

Abstract: A method for forming curved image sensors may include applying positive pressure to the face of an image sensor, forcing the image sensor to adhere the curved surface of a substrate. The pressure may be applied to the face of the image sensor in a variety of ways, including using pneumatic pressure, hydraulic pressure, or pressure from an elastic or inelastic solid. Processing may occur on either a single image sensor die or an image sensor wafer. When an image sensor wafer is processed, a substrate may be used that has a number of cavities defined by respective curved surfaces with each cavity corresponding to a respective image sensor. When pressure is applied to the image sensor, the image sensor may deform until the curvature of the image sensor matches the curvature of the curved surface of the underlying substrate.