Abstract: A probe includes a pedestal and at least one feature extending from the pedestal to engage a surface of a corresponding contact at a position offset from a central longitudinal axis of the contact. The pedestal includes a cavity and the feature can include one or more blades that extend from a periphery of the cavity to a central longitudinal axis of the pedestal. The three blades are configured to engage the surface of the contact. The three blades can be positioned within the cavity to provide a 120-degree rotational symmetry about the central longitudinal axis of the pedestal.

Abstract: A system for testing functionality of die on a wafer including a plurality of contacts includes a support structure and a plurality of probes mounted to the support structure in an array. A configuration of each of the plurality of probes varies based on a position of the probe within the array to maintain uniform engagement between the plurality of probes and a corresponding plurality of contacts across the array.

Abstract: A probe includes a pedestal and at least one feature extending from the pedestal to engage a surface of a corresponding contact at a position offset from a central longitudinal axis of the contact.

Abstract: A probe includes a pedestal and at least one feature extending from the pedestal to engage a surface of a corresponding contact at a position offset from a central longitudinal axis of the contact.

Abstract: A system for testing functionality of die on a wafer including a plurality of contacts includes a support structure and a plurality of probes mounted to the support structure in an array. A configuration of each of the plurality of probes varies based on a position of the probe within the array to maintain uniform engagement between the plurality of probes and a corresponding plurality of contacts across the array.

Abstract: A system for testing functionality of die on a wafer including a plurality of contacts includes a support structure and a plurality of probes mounted to the support structure in an array. A configuration of each of the plurality of probes varies based on a position of the probe within the array to maintain uniform engagement between the plurality of probes and a corresponding plurality of contacts across the array.

Abstract: A method of pressing solder bumps using a pressing apparatus before testing a wafer, including loading the wafer into the pressing apparatus, where the wafer includes a number of chips, and the wafer is aligned with respect to a test head of the pressing apparatus. The test head includes a substrate which has pressing structures arranged across a surface of the substrate facing the wafer. The pressing structures contact the solder bumps, where the solder bumps include a first surface topology and the pressing structures include a pressing surface topology prior to the contact. The caused contact includes altering a shape of each of the plurality of solder bumps, such that the plurality of solder bumps then a second surface topology after the caused contact, and the second surface topology of the solder bumps matches the pressing surface topology after the caused contact.

Abstract: A method of pressing solder bumps using a pressing apparatus before testing a wafer, including loading the wafer into the pressing apparatus, where the wafer includes a number of chips, and the wafer is aligned with respect to a test head of the pressing apparatus. The test head includes a substrate which has pressing structures arranged across a surface of the substrate facing the wafer. The pressing structures contact the solder bumps, where the solder bumps include a first surface topology and the pressing structures include a pressing surface topology prior to the contact. The caused contact includes altering a shape of each of the plurality of solder bumps, such that the plurality of solder bumps then a second surface topology after the caused contact, and the second surface topology of the solder bumps matches the pressing surface topology after the caused contact.

Abstract: A method of pressing solder bumps using a pressing apparatus before testing a wafer, including loading the wafer into the pressing apparatus, where the wafer includes a number of chips, and the wafer is aligned with respect to a test head of the pressing apparatus. The test head includes a substrate which has pressing structures arranged across a surface of the substrate facing the wafer. The pressing structures contact the solder bumps, where the solder bumps include a first surface topology and the pressing structures include a pressing surface topology prior to the contact. The caused contact includes altering a shape of each of the plurality of solder bumps, such that the plurality of solder bumps then a second surface topology after the caused contact, and the second surface topology of the solder bumps matches the pressing surface topology after the caused contact.

Abstract: A system for testing functionality of die on a wafer including a plurality of contacts includes a support structure and a plurality of probes mounted to the support structure in an array. A configuration of each of the plurality of probes varies based on a position of the probe within the array to maintain uniform engagement between the plurality of probes and a corresponding plurality of contacts across the array.

Abstract: A probe includes a pedestal and at least one feature extending from the pedestal to engage a surface of a corresponding contact at a position offset from a central longitudinal axis of the contact.

Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Abstract: An assembly including a liquid thermal interface material for surface tension adhesion and thermal control used during electrical/thermal test of a 3D wafer and methods of use. The method includes temporarily attaching a thinned wafer to a carrier wafer by applying a non-adhesive material therebetween and pressing the thinned wafer and the blank silicon-based carrier wafer together.

Abstract: An assembly including a liquid thermal interface material for surface tension adhesion and thermal control used during electrical/thermal test of a 3D wafer and methods of use. The method includes temporarily attaching a thinned wafer to a carrier wafer by applying a non-adhesive material therebetween and pressing the thinned wafer and the blank silicon-based carrier wafer together.

Abstract: Method and apparatus for margin testing integrated circuits. The method includes selecting a clock frequency, an operating temperature range and a power supply voltage level for margin testing an integrated circuit wherein one or more of the clock frequency, the operating temperature range and the power supply voltage level is outside of the normal operating conditions of the integrated circuit; applying an asynchronously time varying power supply voltage set to the selected power supply voltage level to the integrated circuit; running the integrated circuit chip at the selected clock frequency and maintaining the integrated circuit within the selected temperature range; applying a continuous test pattern to the integrated circuit; and monitoring the integrated circuit for fails.

Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Abstract: Method and apparatus for margin testing integrated circuits. The method includes selecting a clock frequency, an operating temperature range and a power supply voltage level for margin testing an integrated circuit wherein one or more of the clock frequency, the operating temperature range and the power supply voltage level is outside of the normal operating conditions of the integrated circuit; applying an asynchronously time varying power supply voltage set to the selected power supply voltage level to the integrated circuit; running the integrated circuit chip at the selected clock frequency and maintaining the integrated circuit within the selected temperature range; applying a continuous test pattern to the integrated circuit; and monitoring the integrated circuit for fails.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.

Abstract: A heat sink for use in the burn-in of an I/C chip, which chip has a generally “flat” surface. The heat sink has a “flat” surface with micro-channels therein, positioned to open and close in and out of contact against the flat surface of an I/C chip being burned-in. At least one liquid opening communicates with said essentially flat surface on the heat sink to continuously apply liquid between the heat sink and the chip. A liquid inlet is provided to supply liquid to said at least one liquid opening. A recovery channel is positioned to recover liquid from between the heat sink and the chip, and an exhaust member is provided to carry liquid from said recovery channel to the exterior of the heat sink. The invention also includes a method of burning-in a chip.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.