Abstract: A method for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The method improves the resolution of IDDQ testing and diagnosis by modifying well bias during testing. The method applies to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the method relies on using the well bias to change transistor threshold voltages.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.

Abstract: A method, system and apparatus for testing an integrated circuit chip. The system including: means for forming a liquid polyalphaolefine layer on a bottom surface of the integrated circuit chip, a top surface of the integrated circuit chip having and a bottom surface not having signal and power pads; means for placing a surface of a heat sink into physical contact with the bottom surface of the polyalphaolefine layer; means for electrically coupling the integrated circuit chip to a tester; means for electrically testing the integrated circuit chip; means for electrically de-coupling the integrated circuit chip from the tester; means for removing the heat sink from contact with the polyalphaolefine layer, all or a portion of the polyalphaolefine layer remaining on the bottom surface of the integrated circuit chip; and means for removing the polyalphaolefine layer from the bottom surface of the integrated circuit chip.

Abstract: According to the present invention, a method of controlling the burning in of at least one I/C device in a burn in tool is provided. For high power device, the tool has a heat sink positioned to contact each device being burned in, and has a socket for mounting each device to be burned in, and a power source to supply electrical current to burn in each device. The method includes the steps of continuously monitoring at least one process parameter selected from the group of current, voltage, power and temperature, and varying the voltage to maintain at least one of the parameters at or below a given value. Also, a technique for burning in low power devices without a heat sink is provided. The invention also contemplates a tool for performing the above method.

Abstract: A method, system and apparatus for testing an electronic device. The method including: (a) forming a temporary liquid heat transfer layer on a surface of the electronic device; after step (a), (b) placing a surface of a heat sink into physical contact with a surface of the heat transfer layer; after step (b), (c) electrically testing the electronic device; after step (c), (d) removing the heat sink from contact with the heat transfer layer; and after step (d), (e) removing any heat transfer layer remaining on the electronic device from the surface of the electronic device.

Abstract: An improved method of burn-in of I/C chips is provided wherein, at the beginning of the burn-in process, the thermal resistance between the heatsink and the chip is measured at reduced power, the maximum allowable thermal resistance between the chip and heatsink interface is calculated and compared to the actual thermal resistance of the interface. If the actual thermal resistance measured at the interface between the heatsink and the chip package is greater than the maximum allowable calculated thermal resistance, then the corrective action is initiated in order to prevent damage to the I/C chip during burn-in or increase efficient use of the test sites.

Abstract: A socket for testing or burning-in electronic components has a cover including a heat sink and a sensor. The heat sink and sensor are spring loaded so they make direct, temporary contact to an electronic component in the socket during burn-in. A heat transferring device is coupled to each heat sink. The heat transferring device uses input from the sensor to provide heat or cooling to each heat sink to individually control the temperature of each component. The heat transferring device can be an electric heater or a cooling device, such as a fan. Both can also be used. A plurality of these sockets are used in a forced air convective oven for burning-in a plurality of electronic components at one time. The oven provides oven heating and cooling for all components while the socket heater and sensor provide individual temperature control for each component.

Abstract: An improved method of burn-in of I/C chips is provided wherein, at the beginning of the burn-in process, the thermal resistance between the heatsink and the chip is measured at reduced power, the maximum allowable thermal resistance between the chip and heatsink interface is calculated and compared to the actual thermal resistance of the interface. If the actual thermal resistance measured at the interface between the heatsink and the chip package is greater than the maximum allowable calculated thermal resistance, then the corrective action is initiated in order to prevent damage to the I/C chip during burn-in or increase efficient use of the test sites.

Abstract: A socket for testing or burning-in electronic components has a cover including a heat sink and a sensor. The heat sink and sensor are spring loaded so they make direct, temporary contact to an electronic component in the socket during bum-in. A heat transferring device is coupled to each heat sink. The heat transferring device uses input from the sensor to provide heat or cooling to each heat sink to individually control the temperature of each component. The heat transferring device can be an electric heater or a cooling device, such as a fan. Both can also be used. A plurality of these sockets are used in a forced air convective oven for burning-in a plurality of electronic components at one time. The oven provides oven heating and cooling for all components while the socket heater and sensor provide individual temperature control for each component.