Patents by Inventor Marc Girard

Marc Girard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11821080
    Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: November 21, 2023
    Assignee: L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
    Inventors: Yumin Liu, Rocio Alejandra Arteaga Muller, Nicolas Blasco, Jean-Marc Girard, Feng Li, Venkateswara R. Pallem, Zhengning Gao
  • Patent number: 11820654
    Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: November 21, 2023
    Assignee: L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
    Inventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi, Grigory Nikiforov, David Orban
  • Patent number: 11806677
    Abstract: A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: November 7, 2023
    Assignees: L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Kohei Tarutani, Jean-Marc Girard, Nicolas Blasco, Stefan Wiese, Guillaume Husson
  • Publication number: 20230331926
    Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.
    Type: Application
    Filed: June 18, 2021
    Publication date: October 19, 2023
    Inventors: Venkateswara R. PALLEM, Jean-Marc GIRARD, Nicoas BLASCO, Claudia FAFARD, Fabrizio MARCHEGIANI
  • Publication number: 20230272524
    Abstract: A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.
    Type: Application
    Filed: June 16, 2021
    Publication date: August 31, 2023
    Inventors: Takashi TERAMOTO, Christian DUSSARRAT, Grigory NIKIFOROV, Nicolas BLASCO, Jean-Marc GIRARD, Takashi ONO, Keishi YAMAMOTO, Masato HIRAI, Sunao KAMIMURA
  • Publication number: 20230274947
    Abstract: In described embodiments, methods for selective etching (thermal etching) of metals, especially molybdenum- and tungsten-containing materials, and titanium nitride, using thionyl chloride (SOCl2) as an etching gas at low temperatures and low pressure without a need of plasma, for device manufacturing processes and for process chamber cleanings are disclosed. Methods for cleaning reaction product deposits from interior surface of a reactor chamber or from a substrate within said reaction chamber using thionyl chloride (SOCl2) at low temperatures and low pressure without a need of plasma are also disclosed. An additional co-reactant such as hydrogen may be used in combination with thionyl chloride. The processes are carried out in temperature ranging from approximately 150° C. to approximately 600° C., pressure under<100 Torr without the need of a plasma-activation.
    Type: Application
    Filed: July 13, 2021
    Publication date: August 31, 2023
    Inventors: Rocio Alejandra ARTEAGA MULLER, Masato HIRAI, Rapheal ROCHAT, Jean-Marc GIRARD, Venkateswara R. PALLEM, Nicolas BLASCO, Nicolas GOSSET, Megumi ISAJI
  • Patent number: 11739220
    Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: August 29, 2023
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson, Grigory Nikiforov
  • Patent number: 11699584
    Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: July 11, 2023
    Assignee: L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges Claude
    Inventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi
  • Publication number: 20230095074
    Abstract: A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.
    Type: Application
    Filed: October 31, 2022
    Publication date: March 30, 2023
    Inventors: Yumin LIU, Jean-Marc GIRARD, Peng ZHANG, Fan QIN, Gennadiy ITOV, Fabrizio MARCHEGIANI, Thomas J. LARRABEE, Venkateswara R. PALLEM
  • Patent number: 11577967
    Abstract: A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: February 14, 2023
    Assignee: L'Air Liquide Société ANonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Feng Li, Sonia Plaza, Jean-Marc Girard, Nicolas Blasco, Yumin Liu
  • Patent number: 11499014
    Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: November 15, 2022
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Yumin Liu, Jean-Marc Girard, Peng Zhang, Fan Qin, Gennadiy Itov, Fabrizio Marchegiani, Thomas J. Larrabee
  • Publication number: 20220349054
    Abstract: A solid material container for supplying solid materials housed inside by evaporating the solid materials, and includes a carrier gas introduction line, a first filling section that is filled with the solid material, a second filling section that is located in at least a part of an outer periphery of the first filling section, and is filled with the solid material, at least one tray-shaped third filling section that is disposed on the ceiling side of an interior of the solid material container, and a solid material lead-out line.
    Type: Application
    Filed: June 30, 2022
    Publication date: November 3, 2022
    Inventors: Kohei TARUTANI, Jean-Marc GIRARD, Nicolas BLASCO
  • Patent number: 11482414
    Abstract: Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: October 25, 2022
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Naoto Noda, Ivan Oshchepkov, Jean-Marc Girard
  • Patent number: 11407922
    Abstract: Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—R4R5Si—(CH2)t—SiR2R3—]n wherein n=2 to 400; R, R2, R3, R4, and R5 are independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R2, R3, R4, and R5 is H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [—NH—SiH2—CH2—SiH2—]n, and [—N(SiH2—CH2—SiH3)—SiH2—CH2—SiH2—]n.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: August 9, 2022
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Manish Khandelwal, Sean Kerrigan, Jean-Marc Girard, Antonio Sanchez, Peng Zhang, Yang Wang
  • Patent number: 11319449
    Abstract: Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula: LxM(—N(R)—(CR?2)n—NR?2) wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R? each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R? is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4, wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: May 3, 2022
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Wontae Noh, Jooho Lee, Jean-Marc Girard
  • Publication number: 20220076947
    Abstract: Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50° C., exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiR1yR24-x-y(NH—SiR?3)x, wherein x=2, 3, 4; y=0, 1, 2, R1 and R2 each are independently selected from H, a halogen (Cl, Br, I), an C1-C4 alkyl, an isocyanate, a C1-C4 alkoxide, or an —NR3R4 group in which R3 and R4 each are independently selected from H, a C1-C4 alkyl, provided that if R3=H, R4>C1; each R? is independently selected from H, a halogen (Cl, Br, I), or a C1-C4 alkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH2(NH˜Si(CH3)3)2, SiHCI(NH—Si(CH3)3)2, SiCI2(NH˜Si(CH3)3)2, SiH(NH—Si(CH3)3)3, SiCI(NH—Si(CH3)3)3, or Si(NH—Si(CH3)3)4.
    Type: Application
    Filed: December 13, 2019
    Publication date: March 10, 2022
    Inventors: Noato NODA, Naohisa NAKAGAWA, Jean-Marc GIRARD, Zhiwen WAN
  • Patent number: 11261202
    Abstract: Selective reduction methods for halogenated carbosilanes and carbodisilanes are disclosed. More particularly, high yields of the desired carbosilanes and carbodisilanes are obtained by reduction of their halogenated counterparts using a reducing agent and tetrabutylphosphonium chloride (TBPC) as a catalyst.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: March 1, 2022
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Manish Khandelwal, Reno Pesaresi, Jean-Marc Girard
  • Patent number: 11242597
    Abstract: Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n>1; each R is independently an H or a C1-C4 hydrocarbyl group; L is a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is an H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is an H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.
    Type: Grant
    Filed: January 20, 2020
    Date of Patent: February 8, 2022
    Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Satoko Gatineau, Daehyeon Kim, Wontae Noh, Jean-Marc Girard
  • Publication number: 20210395890
    Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.
    Type: Application
    Filed: August 23, 2021
    Publication date: December 23, 2021
    Inventors: Jean-Marc GIRARD, Peng ZHANG, Antonio SANCHEZ, Manish KHANDELWAL, Gennadiy ITOV, Reno PESARESI, Grigory NIKIFOROV, David ORBAN
  • Patent number: 11203528
    Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: December 21, 2021
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson