Abstract: Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR3)3?mA(SiaH2a+1)m, (SiR3)3?n?pA(SiaH2a+1)n(SibH2b+1)p or A(SiaH2a+1)(SibH2b+1)(SicH2c+1) wherein a=1 to 6; b=1 to 6; c=1 to 6; a?b?c; m=1 to 3; n=1 to 2, p=1 to 2, n+p=2 to 3; A=As, P, Sb, Bi; and R is selected from a C1 to C10, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

Abstract: A printed circuit board includes a plurality of layers including conductive layers separated by dielectric layers; and at least one via configured for solder attachment to a connector lead of a surface mount connector, the at least one via including a conductive element that extends from an upper surface of the printed circuit board through one or more of the plurality of layers, the conductive element having a recess in a surface thereof. The recess is configured to receive a tip portion of the connector lead of the surface mount connector. The printed circuit board may have via patterns including signal vias and ground vias.

Abstract: Connector assemblies for making connections to a subassembly, such as a processor card, may include signal contact tips formed of a material different than that of an associated cable conductor. The signal contact tips may be formed of a super elastic material, such as nickel titanium. The connector assembly may include ground contact tips that similarly make a pressure contact to the electrical component may be electrically connected to a shield of the cable shield Housing modules that interlock or interface with a support member may be employed to manufacture connectors with any desired quantity of signal and ground contact tips in any suitable number of columns and rows. Each module may terminate a cable and provide pressure mount connections between signal conductors and the shield of the cable and conductive pads on the subassembly, and conductive or lossy grounded structures around the conductive elements carrying signals through the module.

Abstract: Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR3)3?mA(SiaH2a+1)m, (SiR3)3?n?pA(SiaH2a+1)n(SibH2b+1)p or A(SiaH2a+1)(SibH2b+1)(SicH2c+1) wherein a=1 to 6; b=1 to 6; c=1 to 6; a/b/c; m=1 to 3; n=1 to 2, p=1 to 2, n+p=2 to 3; A=As, P, Sb, Bi; and R is selected from a C1 to C10, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

Abstract: The present invention relates to a turbine rotor of a turbine engine of an aircraft, the rotor comprising a rotor disc provided at its periphery with a plurality of cavities for receiving the root of a blade. This rotor is characterised in that each blade comprises a circumferential coupling rib, in that it comprises a plurality of platforms, which comprise a main wall that is extended at its two ends by an upstream radial wall and by a downstream radial wall, the two longitudinal edges of each platform comprising a groove for receiving part of said coupling rib of one of the two blades between which this platform is assembled, and in that the height of each upstream radial wall is such that said wall extends radially inwards beyond the bottom of the cavity, until it is in front of the upstream face of the rotor disc.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: [Purpose] To provide a method of forming a ruthenium-containing layer and a laminate, wherein the ruthenium-containing layer is selectively formed, as a protective layer capable of suppressing generation of etching residues, on a mask surface for pattern formation that is formed on a substrate, without the need for forming a selective attractant element. [Solution] A method, which comprises a preparation step of providing a substrate having an oxidizable layer, and a deposition step of depositing a ruthenium-containing layer on the oxidizable layer by using a ruthenium tetraoxide through vapour deposition, wherein the oxidizable layer contains carbon atoms.

Abstract: A method of conditioning MoCl5 comprises heating a container of MoCl5 to a temperature ranging from approximately 140° C. to 190° C. for a period ranging from approximately 2 hours to approximately 100 hours to produce a MoCl5-containing composition comprising approximately 10% weight to approximately 60% weight of Phase 1 MoCl5 and 90% weight to approximately 40% weight of Phase 2 MoCl5 as determined by X-ray diffraction. This MoCl5-containing composition is expected to be more thermally stable and provides stable vapor supply.

Abstract: A method of forming a conformal and continuous crystalline Si film on a surface of a substrate comprises: exposing the substrate to a vapor of a first Si-containing precursor under a first temperature; allowing a seed film being formed onto the surface; exposing the substrate to a vapor of a second Si-containing precursor and a vapor of a dopant precursor under a second temperature; depositing a doped amorphous Si-containing film onto the seed film by a chemical vapor deposition (CVD) process; and annealing the substrate to crystalize the doped amorphous Si-containing film forming the conformal and continuous crystalline Si film on the surface. The first Si-containing precursor is (diisobutylamine)trisilane ((iBu)2-N—(SiH2)2—SiH3).

Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.

Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Abstract: A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Abstract: In described embodiments, methods for selective etching (thermal etching) of metals, especially molybdenum- and tungsten-containing materials, and titanium nitride, using thionyl chloride (SOCl2) as an etching gas at low temperatures and low pressure without a need of plasma, for device manufacturing processes and for process chamber cleanings are disclosed. Methods for cleaning reaction product deposits from interior surface of a reactor chamber or from a substrate within said reaction chamber using thionyl chloride (SOCl2) at low temperatures and low pressure without a need of plasma are also disclosed. An additional co-reactant such as hydrogen may be used in combination with thionyl chloride. The processes are carried out in temperature ranging from approximately 150° C. to approximately 600° C., pressure under<100 Torr without the need of a plasma-activation.

Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Abstract: A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

Abstract: A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.