Abstract: Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si—H and a N—H moiety to form an Si—N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Abstract: Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group.

Abstract: Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group and adjacent R?s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal azatrane precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1?R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.

Abstract: Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: [Problem] To provide a novel production method for pentachlorodisilane and to obtain pentachlorodisilane having a purity of 90 mass % or more by carrying out this production method. [Solution] A production method provided with: a high-temperature reaction step in which a raw material gas containing vaporized tetrachlorosilane and hydrogen is reacted at a high temperature in order to obtain a reaction product gas containing trichlorosilane; a pentachlorodisilane generation step in which the reaction product gas obtained in the high-temperature reaction step is brought into contact with a cooling liquid obtained by circulative cooling of a condensate that is generated by cooling the reaction product gas, the reaction product gas is quickly cooled, and pentachlorodisilane is generated within the condensate; and a recovery step in which the generated pentachlorodisilane is recovered.

Abstract: Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—R4R5Si—(CH2)t—SiR2R3—]n wherein n=2 to 400; R, R2, R3, R4, and R5 are independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R2, R3, R4, and R5 is H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary precursors include, but are not limited to, [—NH—SiH2—CH2—SiH2—]n, and [—N(SiH2—CH2—SiH3)—SiH2—CH2—SiH2—]n.