Patents by Inventor Marc Hauptmann
Marc Hauptmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240134283Abstract: Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.Type: ApplicationFiled: February 7, 2022Publication date: April 25, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Niek Willem KLEIN KOERKAMP, Marc HAUPTMANN, Aliasghar KEYVANI JANBAHAN, Jingchao WANG
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Patent number: 11782349Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: January 24, 2023Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20230168591Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: January 24, 2023Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erick Johannes Maria Wallerbos, Erick Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11592753Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: April 7, 2022Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20220236647Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.Type: ApplicationFiled: July 16, 2020Publication date: July 28, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Cornelis Johannes Henricus LAMBREGTS, Amir Bin ISMAIL, Rizvi RAHMAN, Allwyn BOUSTHEEN, Raheleh PISHKARI, Everhardus Cornelis MOS, Ekaterina Mikhailovna VIATKINA, Roy WERKMAN, Ralph BRINKHOF
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Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Publication number: 20220187786Abstract: A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.Type: ApplicationFiled: March 19, 2020Publication date: June 16, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Amir Bin ISMAIL, Rizvi RAHMAN, Jiapeng LI
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Patent number: 11327407Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: November 24, 2020Date of Patent: May 10, 2022Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20210349402Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Everhardus Cornelis Mos, Weitian Kou, Alexander Ypma, Michiel Kupers, Hyunwoo Yu, Min-Sub Han
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Patent number: 11099487Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: GrantFiled: March 28, 2018Date of Patent: August 24, 2021Assignee: ASML Netherlands BVInventors: Marc Hauptmann, Everhardus Cornelis Mos, Weitian Kou, Alexander Ypma, Michiel Kupers, Hyunwoo Yu, Min-Sub Han
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Publication number: 20210080836Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: November 24, 2020Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 10877381Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: September 28, 2017Date of Patent: December 29, 2020Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 10613445Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.Type: GrantFiled: March 25, 2019Date of Patent: April 7, 2020Assignee: ASML Netherlands B.V.Inventors: Marc Hauptmann, Dylan John David Davies, Paul Janssen, Naoko Tsugama, Richard Joseph Bruls, Kornelis Tijmen Hoekerd, Edwin Johannes Maria Janssen, Petrus Johannes Van Den Oever, Ronald Van Der Wilk, Antonius Hubertus Van Schijndel, Jorge Alberto Vieyra Salas
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Publication number: 20200050180Abstract: A lithographic process is performed on a plurality of semiconductor substrates. The method includes selecting one or more of the substrates as one or more sample substrates. Metrology steps are performed only on the selected one or more sample substrates. Based on metrology results of the selected one or more sample substrates, corrections are defined for use in controlling processing of the substrates or of future substrates. The selection of the one or more sample substrates is based at least partly on statistical analysis of object data measured in relation to the substrates. The same object data or other data can be used for grouping substrates into groups. Selecting of one or more sample substrates can include selecting substrates that are identified by the statistical analysis as most representative of the substrates in their group and/or include elimination of one or more substrates that are identified as unrepresentative.Type: ApplicationFiled: September 21, 2017Publication date: February 13, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Min-Sub HAN
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Publication number: 20200026201Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: ApplicationFiled: March 28, 2018Publication date: January 23, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Everhardus Cornelis MOS, Weitian KOU, Alexander YPMA, Michiel KUPERS, Hyunwoo YU, Min-Sub HAN
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Publication number: 20200019067Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: September 28, 2017Publication date: January 16, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cedric Desire GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Publication number: 20190219929Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high- resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.Type: ApplicationFiled: March 25, 2019Publication date: July 18, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Marc Hauptmann, Dylan John David Davies, Paul Janssen, Naoko Tsugama, Richard Joseph Bruls, Kornelis Tijmen Hoekerd, Edwin Johannes Maria Janssen, Petrus Johannes Van Den Oever, Ronald Van Der Wilk, Antonius Hubertus Van Schijndel, Jorge Alberto Vieyra Salas
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Patent number: 10241418Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.Type: GrantFiled: September 21, 2015Date of Patent: March 26, 2019Assignee: ASML Netherlands B.V.Inventors: Marc Hauptmann, Dylan John David Davies, Paul Janssen, Naoko Tsugama, Richard Joseph Bruls, Kornelis Tijmen Hoekerd, Edwin Johannes Maria Janssen, Petrus Johannes Van Den Oever, Ronald Van Der Wilk, Antonius Hubertus Van Schijndel, Jorge Alberto Vieyra Salas
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Patent number: 9944553Abstract: The invention relates to a solar protection glazing comprising, on at least one of the faces of a glass substrate, a multi-layer stack comprising at least one layer absorbing solar radiation of at least 3 nm and dielectric coatings surrounding said solar radiation absorbing layer. According to the invention, the light reflection of the glass substrate coated with the multi-layer stack, measured on the substrate side, is at least 20% and is at least two times the light reflection of the glass substrate coated with the multi-layer stack measured on the stack side, and the reflection color on the substrate side has a colorimetric coordinate value a* of less than 2 and a colorimetric coordinate value b* of less than 5. The invention is particularly useful as an automobile glazing, in particular on the roof thereof, as a building glazing or as a household oven.Type: GrantFiled: June 27, 2014Date of Patent: April 17, 2018Assignee: AGC GLASS EUROPEInventors: Stijn Mahieu, Gaetan Di Stefano, Marc Hauptmann, Jacques Dumont
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Patent number: 9896377Abstract: The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment.Type: GrantFiled: May 28, 2014Date of Patent: February 20, 2018Assignee: AGC GLASS EUROPEInventors: Stijn Mahieu, Anne-Christine Baudouin, Marc Hauptmann, Jean-Michel Depauw