Patents by Inventor Marcel Kastler
Marcel Kastler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10005879Abstract: A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol.Type: GrantFiled: February 3, 2012Date of Patent: June 26, 2018Assignee: BASF SEInventors: Subramanian Vaidyanathan, Marcel Kastler, Bertha Tan, Mi Zhou
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Patent number: 9650461Abstract: Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.Type: GrantFiled: November 19, 2015Date of Patent: May 16, 2017Assignees: BASF SE, FLEXTERRA, INC.Inventors: Ashok Kumar Mishra, Subramanian Vaidyanathan, Hiroyoshi Noguchi, Florian Doetz, Silke Koehler, Marcel Kastler
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Publication number: 20160075808Abstract: Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.Type: ApplicationFiled: November 19, 2015Publication date: March 17, 2016Inventors: Ashok Kumar MISHRA, Subramanian Vaidyanathan, Hiroyoshi Noguchi, Florian Doetz, Silke Koehler, Marcel Kastler
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Patent number: 9221944Abstract: Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.Type: GrantFiled: December 16, 2009Date of Patent: December 29, 2015Assignees: BASF SE, Polyera CorporationInventors: Ashok Kumar Mishra, Subramanian Vaidyanathan, Hiroyoshi Noguchi, Florian Doetz, Silke Koehler, Marcel Kastler
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Patent number: 9219233Abstract: Disclosed are new semiconductor materials prepared from rylene-(?-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.Type: GrantFiled: February 5, 2009Date of Patent: December 22, 2015Assignees: BASF SE, Polyera CorporationInventors: Antonio Facchetti, Zhihua Chen, He Yan, Shaofeng Lu, Tobin J. Marks, Yan Zheng, Marcel Kastler, Subramanian Vaidyanathan, Florian Doetz, Silke Annika Koehler
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Patent number: 9187600Abstract: The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocurable polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of >=360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process.Type: GrantFiled: November 1, 2011Date of Patent: November 17, 2015Assignee: BASF SEInventors: Hans Jürg Kirner, Marcel Kastler, Emmanuel Martin
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Patent number: 9147850Abstract: Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.Type: GrantFiled: December 19, 2011Date of Patent: September 29, 2015Assignees: BASF SE, Polyera CorporationInventors: Antonio Facchetti, Zhihua Chen, He Yan, Marcel Kastler, Florian Doetz
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Patent number: 9129801Abstract: The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) applying a porous layer of at least one semiconductive metal oxide to a substrate, (B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and (C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates,Type: GrantFiled: June 15, 2010Date of Patent: September 8, 2015Assignee: BASF SEInventors: Friederike Fleischhaker, Imme Domke, Andrey Karpov, Marcel Kastler, Veronika Wloka, Lothar Weber
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Patent number: 9074050Abstract: The present invention relates to a continuous process for the production of polymeric coupling products by using a reactor assembly which is equipped with two or more reaction cells. The educt fluid is pumped through the reaction cells and thoroughly mixed therein by means of agitators. Preferably the process according to the invention is used for the preparation of coupling products which show at least partially precipitation and/or gelation effects during the performance of the synthesis. The precipitation and/or gelation effects are associated with and increase of the viscosity of the reaction system under reaction conditions. The products which are obtained by the process according to the invention have increased molecular weight and low polydispersity over similar products which were obtained in batch experiments.Type: GrantFiled: May 29, 2012Date of Patent: July 7, 2015Assignee: BASF SEInventors: Matthias Kleiner, Martin Elbs, Marcel Kastler
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Patent number: 8877657Abstract: The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C.Type: GrantFiled: April 26, 2010Date of Patent: November 4, 2014Assignee: BASF SEInventors: Andrey Karpov, Friederike Fleischhaker, Imme Domke, Marcel Kastler, Veronika Wloka, Lothar Weber
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Patent number: 8853820Abstract: The present invention relates to an electronic device comprising at least one dielectric layer, said dielectric layer comprising a crosslinked organic compound based on at least one compound which is radically crosslinkable and a method of making the electronic device.Type: GrantFiled: May 20, 2010Date of Patent: October 7, 2014Assignees: BASF SE, Polyera CorporationInventors: Marcel Kastler, Silke Annika Koehler
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Patent number: 8796672Abstract: Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.Type: GrantFiled: February 5, 2009Date of Patent: August 5, 2014Assignees: Polyera Corporation, BASF SEInventors: Antonio Facchetti, He Yan, Zhihua Chen, Marcel Kastler, Florian Doetz
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Patent number: 8734899Abstract: The present invention relates to particles which have been modified by a modifier and a dispersion medium comprising the modified particles.Type: GrantFiled: August 28, 2009Date of Patent: May 27, 2014Assignee: BASF SEInventors: Imme Domke, Andrey Karpov, Hartmut Hibst, Radoslav Parashkov, Ingolf Hennig, Marcel Kastler, Friederike Fleischhaker, Lothar Weber, Peter Eckerle
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Publication number: 20140080994Abstract: The present invention relates to a continuous process for the production of polymeric coupling products by using a reactor assembly which is equipped with two or more reaction cells. The educt fluid is pumped through the reaction cells and thoroughly mixed therein by means of agitators. Preferably the process according to the invention is used for the preparation of coupling products which show at least partially precipitation and/or gelation effects during the performance of the synthesis. The precipitation and/or gelation effects are associated with and increase of the viscosity of the reaction system under reaction conditions. The products which are obtained by the process according to the invention have increased molecular weight and low polydispersity over similar products which were obtained in batch experiments.Type: ApplicationFiled: May 29, 2012Publication date: March 20, 2014Applicant: BASF SEInventors: Matthias Kleiner, Martin Elbs, Marcel Kastler
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Patent number: 8653227Abstract: A process for preparing a regioregular homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol by a) reacting a 3-substituted 2,5-dihalothiophene, 2,5-dihaloselenophene, 2,5-dihalothiazol or 2,5-dihaloselenazol with reactive zinc, magnesium and/or an organomagnesium halide to give an organozinc or organomagnesium intermediate containing one halozinc or one halomagnesium group, b) bringing the organozinc or the organomagnesium intermediate into contact with a Ni(II), Ni(O), Pd(II) or Pd(0) catalyst to initiate the polymerization reaction, and c) polymerizing the organozinc or the organomagnesium intermediate to give a regioregular head-to-tail homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol characterized in that the polymerization reaction is carried out at a temperature rising from a lower temperature T1 to a higher temperature T2 during a time t1, wherein TType: GrantFiled: June 14, 2010Date of Patent: February 18, 2014Assignees: BASF SE, Rieke Metals, Inc.Inventors: Marcel Kastler, Silke Annika Koehler
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Patent number: 8598304Abstract: Poly(5,5?-bis(thiophen-2-yl)-benzo[2,1-b;3,4-b?]dithiophene) comprising as repeating units the group of the formula (I) wherein R is independently selected from a) a C1-20 alkyl group, b) a C2-20 alkenyl group, c) a C2-20 alkynyl group, d) a C1-20 alkoxy group, e) a —Y—C3-10 cycloalkyl group, f) a —Y—C6-14 aryl group, g) a —Y-3-12 membered cycloheteroalkyl group, or h) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R1 groups, R1 is independently selected from a) a S(O)m—C1-20 alkyl group, b) a S(O)m—OC1-20 alkyl group, c) a S(O)m—OC6-14 aryl group, d) a C(O)—OC1-20 alkyl group, e) a C(O)—OC6-14 aryl group, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C3-10 cycloalkyl group, k) a C6-14 aryl group, l) a 3-12 meType: GrantFiled: June 25, 2009Date of Patent: December 3, 2013Assignees: BASF SE, Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.Inventors: Marcel Kastler, Silke Koehler, Klaus Muellen, Miaoyin Liu, Dirk Beckmann, Ralph Rieger
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Patent number: 8569501Abstract: Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.Type: GrantFiled: May 29, 2009Date of Patent: October 29, 2013Assignees: BASF SE, Polyera CorporationInventors: Antonio Facchetti, Zhihua Chen, Florian Doetz, Marcel Kastler, Tobin J. Marks, He Yan, Yan Zheng
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Publication number: 20130270543Abstract: Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.Type: ApplicationFiled: December 19, 2011Publication date: October 17, 2013Applicants: Polyera Corporation, BASF SEInventors: Antonio Facchetti, Zhihua Chen, He Yan, Marcel Kastler, Florian Doetz
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Publication number: 20130200336Abstract: A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol.Type: ApplicationFiled: February 3, 2012Publication date: August 8, 2013Applicant: BASF SEInventors: Subramanian VAIDYANATHAN, Marcel Kastler, Bertha Tan, Mi Zhou
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Patent number: 8470961Abstract: Disclosed are new semiconductor materials prepared from naphthalene-imide copolymers. Such polymers can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.Type: GrantFiled: February 5, 2009Date of Patent: June 25, 2013Assignees: BASF SE, Polyera CorporationInventors: Antonio Facchetti, Zhihua Chen, He Yan, Yan Zheng, Jordan Quinn, Marcel Kastler, Florian Doetz, Silke Koehler