Abstract: A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.

Abstract: Disclosed is a method for preparing an organic electronic device, which contains one or more layers of a suitable functional material on a substrate, which process is characterized in that at least one interlayer of an amphiphilic protein is placed between adjacent layers of the functional material, or between the substrate and the adjacent layer of the functional material. The protein interlayer improves the adhesion of layers without negative impact on the device's performance.

Abstract: The present invention relates to semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. The semiconducting compounds can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.

Abstract: Dithienobenzo-thieno[3,2-b]thiophene-copolymers of the formula (I) wherein: pi is a monocyclic or polycyclic moiety optionally substituted with 1-4 Ra groups, wherein Ra, at each occurrence, is independently hydrogen or a) a halogen, b) —(CN, c) —NO2, d) oxo, e) —OH, f) ?C(Rb)2; g) a C1-20 alkyl group, h) a C2-20 alkenyl group, i) a C2-20 alkynyl group, j) a C1-20 alkoxy group, k) a C1-20 alkylthio group, l) a C1-20 haloalkyl group, m) a —Y—C3-10 cycloalkyl group, n) a —Y—C6-14 aryl group, o) a —Y-3-12 membered cycloheteroalkyl group, or p) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl or haloaryl group, the 3-12 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 Rb groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and R1, R2, R3, at each occurrence, are

Abstract: Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) —CN, d) —NO2, e) —OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a —Y—C3-10 cycloalkyl group, m) a —Y—C6-14 aryl group, n) a —Y-3-12 membered cyclo-heteroalkyl group, or o) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc-loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2.

Abstract: Dithienobenzo-thieno[3,2-b]thiophene-copolymers of the formula (I) wherein: pi is a monocyclic or polycyclic moiety optionally substituted with 1-4 Ra groups, wherein Ra, at each occurrence, is independently hydrogen or a) a halogen, b) —(CN, c) —NO2, d) oxo, e) —OH, f) ?C(Rb)2; g) a C1-20 alkyl group, h) a C2-20 alkenyl group, i) a C2-20 alkynyl group, j) a C1-20 alkoxy group, k) a C1-20 alkylthio group, l) a C1-20 haloalkyl group, m) a —Y—C3-10 cycloalkyl group, n) a —Y—C6-14 aryl group, o) a —Y-3-12 membered cycloheteroalkyl group, or p) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl or haloaryl group, the 3-12 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 Rb groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and R1, R2, R3, at each occurrence, are

Abstract: Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocurable polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of >=360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process.

Abstract: A process for preparing a regioregular homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol by a) reacting a 3-substituted 2,5-dihalothiophene, 2,5-dihaloselenophene, 2,5-dihalothiazol or 2,5-dihaloselenazol with reactive zinc, magnesium and/or an organomagnesium halide to give an organozinc or organomagnesium intermediate containing one halozinc or one halomagnesium group, b) bringing the organozinc or the organomagnesium intermediate into contact with a Ni(II), Ni(O), Pd(II) or Pd(O) catalyst to initiate the polymerization reaction, and c) polymerizing the organozinc or the organomagnesium intermediate to give a regioregular head-to-tail homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol characterized in that the polymerization reaction is carried out at a temperature rising from a lower temperature T1 to a higher temperature T2 during a time t1, wherein T

Abstract: The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) applying a porous layer of at least one semiconductive metal oxide to a substrate, (B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and (C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, am

Abstract: A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.

Abstract: The present invention relates to an electronic device comprising at least one dielectric layer, said dielectric layer comprising a crosslinked organic compound based on at least one compound which is radically crosslinkable and a method of making the electronic device.

Abstract: The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C.

Abstract: Poly(5,5?-bis(thiophen-2-yl)-benzo[2,1-b;3,4-b?]dithiophene) comprising as repeating units the group of the formula (I) wherein R is independently selected from a) a C1-2O alkyl group, b) a C2-20 alkenyl group, c) a C2-20 alkynyl group, d) a C1-20 alkoxy group, e) a —Y—C3-10 cycloalkyl group, f) a —Y—C6-14 aryl group, g) a —Y-3-12 membered cycloheteroalkyl group, or h) a —Y-5-14 membered het-eroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R1 groups, R1 is independently selected from a) a S(O)m—C1-20 alkyl group, b) a S(O)m—OC1-20 alkyl group, c) a S(O)m—OC6-14 aryl group, d) a C(O)—OC1-20 alkyl group, e) a C(O)—OC6-14 aryl group, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C3-10 cycloalkyl group, k) a C6-14 aryl group, I) a 3-12 m

Abstract: The present invention relates to particles which have been modified by a modifier and a dispersion medium comprising the modified particles.

Abstract: Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) —CN, d) —NO2, e) —OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a —Y—C3-10 cycloalkyl group, m) a —Y—C6-14 aryl group, n) a —Y-3-12 membered cyclo-heteroalkyl group, or o) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc-loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2.

Abstract: Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: A polymer comprising the group of the formula (I) in particular derivatives of Poly[benzothiophen-2.6-diyl].

Abstract: Disclosed are new semiconductor materials prepared from rylene-(?-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: A benzothiadiazol-cyclopentadithiophene copolymer comprising as repeating unit the group of the formula (I) wherein R is n-hexadecyl or 3,7-dimethyloctyl, and having a number average molecular weight Mn in the range of from 30 to 70 kg/mol is disclosed. The invention also relates to the use of the copolymers as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.