Abstract: IC die package with hybrid metallization surfaces. Routing metallization features have lower surface roughness for reduced high-frequency signal transmission losses while IC die attach metallization features have higher surface roughness for greater adhesion. Routing and die attach features may be formed within a same package metallization level, for example with a plating process. An insulator material may be formed over the surface of the metallization features, for example with a dry film lamination process. Optionally, an interface material may be deposited upon at least the routing features to enhance adhesion of the insulator material to metallization surfaces of low roughness. An opening in the insulator material may be formed to expose a surface of a die attach feature. The exposed surface may be selectively roughened, and an IC die attached to the roughened surface.

Abstract: Integrated circuit (IC) die packages including a glass with conductive through-glass vias (TGVs). The TGVs are lined with a buffer comprising an inorganic material having a low elastic (Young's) modulus. The buffer may thereby accommodate internal stress between the glass and through via metallization formed over the buffer. The compliant inorganic material may be a metal or metal alloy, for example, different than that of the via metallization. The inorganic material may also be a metal nitride, metal silicide, or metal carbide. A TGV buffer may be one material layer of a stack comprising two or more material layers deposited upon TGV sidewall surfaces. A routing structure may be built-up on at least one side of the glass and IC die assembled to the routing structure. The buffer Ipresent within the TGVs may be absent from metal features of the routing structure.

Abstract: Carbon nanofiber capacitor apparatus and related methods are disclosed herein. An example apparatus includes an integrated circuit package substrate, and a capacitor provided in the integrated circuit package substrate. The capacitor includes a carbon fiber array, a dielectric film positioned on the carbon fiber array, and an electrode film positioned on the dielectric film.

Abstract: An electronic substrate may be formed having at least one metal-to-dielectric adhesion promotion material layer therein. The electronic substrate may comprise a conductive metal trace, a dielectric material layer on the conductive metal trace, and the adhesion promotion material layer between the conductive metal trace and the dielectric material layer, wherein the adhesion promotion material layer comprises an organic adhesion material and a metal constituent dispersed within the organic adhesion material, wherein a metal within the metal constituent has a standard reduction potential greater than a standard reduction potential of the conductive metal trace.

Abstract: Glass-integrated inductors in integrated circuit (IC) packages are disclosed. A disclosed IC package includes a glass layer having an aperture extending therethrough, and an inductor in the aperture, the inductor including a metal core extending through the aperture, the metal core electrically coupled to interconnects on opposite sides of the glass layer, and at least one of a ferrite or a magnetic alloy in the aperture and laterally surrounding the metal core.

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

Abstract: Photonic integrated circuit packages and methods of manufacturing are disclosed. An example integrated circuit package includes: a semiconductor die; a package substrate supporting the semiconductor die, the package substrate including a glass core, the glass core including a through glass via extending between opposing first and second surfaces of the glass core, the glass core including a recess spaced apart from the through glass via, the recess defined by a third surface of the glass core, the recess having a different shape than the through glass via; and a reflective metal disposed on the third surface to define a mirror, the reflective metal also disposed between a wall of the through glass via and a conductive material disposed in the through glass via.

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

Abstract: Substrate package-integrated oxide capacitors and related methods are disclosed herein. An example apparatus including a first layer and a thin film capacitor including a second layer on the first layer, the second layer defining a plurality of openings and a third layer disposed on the first layer and in the plurality of openings, the second layer and the third layer corresponding to electrodes of a capacitor and a fourth layer disposed between the first layer and the second layer, the third layer including an oxidized material, the third layer forming a dielectric of the capacitor.

Abstract: In an embodiment, a package substrate is described. In an embodiment, the package substrate comprises a layer, where the layer is a dielectric material. In an embodiment, a via opening is provided through a thickness of the layer. In an embodiment, a conductive via is in the via opening, where the conductive via has a substantially uniform composition throughout a thickness of the conductive via. In an embodiment the conductive via directly contacts the layer.

Abstract: Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate, where the package substrate comprises a plurality of stacked dielectric layers. In an embodiment, the electronic package further comprises an opening into the package substrate, where the opening passes through at least two of the plurality of dielectric layers. In an embodiment, a first pad is at the bottom of the opening, a capacitor is disposed in the opening, and a second pad is over the capacitor.

Abstract: Embodiments disclosed herein include a package core. In an embodiment, the package core comprises a core substrate that includes glass. In an embodiment, a cavity is provided into the core substrate. In an embodiment, a capacitor is lining sidewalls of the cavity, and the capacitor comprises a first layer, a dielectric layer over the first layer, and a second layer over the dielectric layer.

Abstract: The present disclosure is directed to a method providing a substrate core having a glass core layer with top and bottom surfaces and a build-up process performing operations to form a plurality of through-glass vias formed through the glass core layer and a plurality of conductive layers on the top and bottom surfaces of the glass core layer. As an integral part of the build-up process, a defect detection method may be used to detect defects in the glass core layer. The inspection for defects may be performed after selected operations. After one or more defect (e.g., crack) is uncovered, a repair process may be performed to repair the defects in the glass core layer. The repair of a defect may be performed immediately upon detection or after selected operations as a comprehensive repair of a group of defects.

Abstract: Embodiments disclosed herein include package substrates and methods of forming such substrates. In an embodiment, a package substrate comprises a core, a first layer over the core, where the first layer comprises a metal, and a second layer over the first layer, where the second layer comprises an electrical insulator. In an embodiment, the package substrate further comprises a third layer over the second layer, where the third layer comprises a dielectric material, and where an edge of the core extends past edges of the first layer, the second layer, and the third layer.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for forming a silicide and a silicon nitrate layer between a copper feature and dielectric to reduce delamination of the dielectric. Embodiments allow an unroughened surface for the copper feature to reduce the insertion loss for transmission lines that go through the unroughened surface of the copper. Embodiments may include sequential interlayers between a dielectric and copper. Other embodiments may be described and/or claimed.

Abstract: High-density IC die package routing structures with one or more nitrided surfaces. Metallization features may be formed, for example with a plating process. Following the plating process, a surface of the metallization features may be exposed to a surface treatment that incorporates nitrogen onto a surface of the metallization. The presence of nitrogen may chemically improve adhesion between finely patterned metallization features and package dielectric material. Accordingly, surface roughness of metallization features may be reduced without suffering delamination. With lower surface roughness, metallization features may transmit higher frequency data signals with lower insertion loss.

Abstract: Substrate assemblies having adhesion promotor layers and related methods are disclosed. An example package assembly includes a substrate, a dielectric layer and a conductive layer between the substrate and the dielectric layer. The conductive layer has a surface roughness of less than 1 micrometer (?m). A film is provided between the dielectric layer and the conductive layer, and between exposed surfaces of the substrate adjacent the conductive layer and the dielectric layer. The film including silicon and nitrogen and being substantially free of hydrogen.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to an organic adhesion promoter layer on the surface of a copper trace to reduce delamination between a dielectric material and the surface of the copper trace, and to facilitate a smooth surface interface between the surface of the copper trace and of a copper feature, such as a copper-filled via, placed on the surface of the copper trace. The smooth surface interface reduces insertion loss and enables routing of higher frequency signals on a package, and does not require roughing of the copper trace in order to adhere to the dielectric material. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a package substrate with a plurality of first layers, where the first layers comprise an organic material. In an embodiment, a trace is embedded in the package substrate. In an embodiment, a second layer is over the trace, where the second layer comprises silicon and nitrogen, and wherein the second layer is chemically bonded to one of the first layers by an oxygen containing ligand and/or a nitrogen containing ligand.