Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to glass layers within a package that include one or more high aspect ratio TGV that are filled with conductive material. The TGV extends from a first side of the glass layer to a second side of the glass layer opposite the first side and are filled with conductive material to provide a high-quality electrical connection between the first side of the glass layer and the second side of the glass layer, where a portion of the wall of the TGV includes titanium. Other embodiments may be described and/or claimed.

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

Abstract: Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate with a plurality of first layers, where the first layers comprise an organic material. In an embodiment, a trace is embedded in the package substrate, and a second layer is over the trace, where the second layer comprises silicon and nitrogen. In an embodiment, the second layer is chemically bonded to the one of the first layers.

Abstract: Hybrid panel for integrated circuit (IC) package assembly that has one or more glass core panels within a perimeter frame. The hybrid panel may offer better handling characteristics during a build-up of metallization features and dielectric layers upon the glass core panels. A glass edge of a glass core panel may be physically and/or chemically treated to improve adhesion of the glass core panel to the perimeter frame, for example with an intervening organic dielectric material. In some embodiments, the glass core panel edge may be chamfered or beveled. A glass edge bevel or chamfer may further have enhanced surface roughness. In some embodiments, a glass edge is chemically functionalized with surface groups, for example through plasma oxidation. An edge-treated glass core panel may be assembled with a frame that has a complementary recessing or protruding interior sidewall adjacent to the glass core panel.

Abstract: The present disclosure is directed to an electroless plating process using a panel basket for holding semiconductor panels comprising a plurality of metal pads and shielding the metal pads from contaminants and over-etching and under-etching caused by the contaminants.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed to embedding capacitors in through glass vias within a glass core of a substrate. In embodiments, the through glass vias may extend entirely from a first side of the glass core to a second side of the glass core opposite the first side. Layers of electrically conductive material and dielectric material may then be deposited within the through glass via to form a capacitor. the capacitor may then be electrically coupled with electrical routings on buildup layers on either side of the glass core. Other embodiments may be described and/or claimed.

Abstract: Apparatuses, capacitor structures, systems, and techniques related to capacitors having passivation boundary defects within a polycrystalline dielectric material of the capacitor are discussed. The polycrystalline dielectric material includes crystalline grains of a first composition having grain boundaries between the crystalline grains. At some of the grain boundaries, the polycrystalline dielectric material includes amorphous passivation material having a second composition.

Abstract: Integrated circuit (IC) die packages including a glass with conductive through-glass vias (TGVs). The TGVs are lined with a buffer comprising an inorganic material having a low elastic (Young's) modulus. The buffer may thereby accommodate internal stress between the glass and through via metallization formed over the buffer. The compliant inorganic material may be a metal or metal alloy, for example, different than that of the via metallization. The inorganic material may also be a metal nitride, metal silicide, or metal carbide. A TGV buffer may be one material layer of a stack comprising two or more material layers deposited upon TGV sidewall surfaces. A routing structure may be built-up on at least one side of the glass and IC die assembled to the routing structure. The buffer Ipresent within the TGVs may be absent from metal features of the routing structure.

Abstract: Carbon nanofiber capacitor apparatus and related methods are disclosed herein. An example apparatus includes an integrated circuit package substrate, and a capacitor provided in the integrated circuit package substrate. The capacitor includes a carbon fiber array, a dielectric film positioned on the carbon fiber array, and an electrode film positioned on the dielectric film.

Abstract: IC die package with hybrid metallization surfaces. Routing metallization features have lower surface roughness for reduced high-frequency signal transmission losses while IC die attach metallization features have higher surface roughness for greater adhesion. Routing and die attach features may be formed within a same package metallization level, for example with a plating process. An insulator material may be formed over the surface of the metallization features, for example with a dry film lamination process. Optionally, an interface material may be deposited upon at least the routing features to enhance adhesion of the insulator material to metallization surfaces of low roughness. An opening in the insulator material may be formed to expose a surface of a die attach feature. The exposed surface may be selectively roughened, and an IC die attached to the roughened surface.

Abstract: An electronic substrate may be formed having at least one metal-to-dielectric adhesion promotion material layer therein. The electronic substrate may comprise a conductive metal trace, a dielectric material layer on the conductive metal trace, and the adhesion promotion material layer between the conductive metal trace and the dielectric material layer, wherein the adhesion promotion material layer comprises an organic adhesion material and a metal constituent dispersed within the organic adhesion material, wherein a metal within the metal constituent has a standard reduction potential greater than a standard reduction potential of the conductive metal trace.

Abstract: Glass-integrated inductors in integrated circuit (IC) packages are disclosed. A disclosed IC package includes a glass layer having an aperture extending therethrough, and an inductor in the aperture, the inductor including a metal core extending through the aperture, the metal core electrically coupled to interconnects on opposite sides of the glass layer, and at least one of a ferrite or a magnetic alloy in the aperture and laterally surrounding the metal core.

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

Abstract: Photonic integrated circuit packages and methods of manufacturing are disclosed. An example integrated circuit package includes: a semiconductor die; a package substrate supporting the semiconductor die, the package substrate including a glass core, the glass core including a through glass via extending between opposing first and second surfaces of the glass core, the glass core including a recess spaced apart from the through glass via, the recess defined by a third surface of the glass core, the recess having a different shape than the through glass via; and a reflective metal disposed on the third surface to define a mirror, the reflective metal also disposed between a wall of the through glass via and a conductive material disposed in the through glass via.

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

Abstract: Substrate package-integrated oxide capacitors and related methods are disclosed herein. An example apparatus including a first layer and a thin film capacitor including a second layer on the first layer, the second layer defining a plurality of openings and a third layer disposed on the first layer and in the plurality of openings, the second layer and the third layer corresponding to electrodes of a capacitor and a fourth layer disposed between the first layer and the second layer, the third layer including an oxidized material, the third layer forming a dielectric of the capacitor.

Abstract: Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate, where the package substrate comprises a plurality of stacked dielectric layers. In an embodiment, the electronic package further comprises an opening into the package substrate, where the opening passes through at least two of the plurality of dielectric layers. In an embodiment, a first pad is at the bottom of the opening, a capacitor is disposed in the opening, and a second pad is over the capacitor.

Abstract: In an embodiment, a package substrate is described. In an embodiment, the package substrate comprises a layer, where the layer is a dielectric material. In an embodiment, a via opening is provided through a thickness of the layer. In an embodiment, a conductive via is in the via opening, where the conductive via has a substantially uniform composition throughout a thickness of the conductive via. In an embodiment the conductive via directly contacts the layer.

Abstract: Embodiments disclosed herein include a package core. In an embodiment, the package core comprises a core substrate that includes glass. In an embodiment, a cavity is provided into the core substrate. In an embodiment, a capacitor is lining sidewalls of the cavity, and the capacitor comprises a first layer, a dielectric layer over the first layer, and a second layer over the dielectric layer.