Abstract: Data protection with error correction/detection capabilities can be provided on a cache line basis. When provided on a cache line basis to collectively protect the cache line data, the error correction/detection capabilities can be provided with fewer number of bits (e.g., error correction code (ECC) and/or cyclic redundancy check (CRC) bits) as compared to providing the same error correction/detection capabilities individually on a subset of the cache line data.

Abstract: A channel width can depend on a quantity of memory units (e.g., memory dice) that forms a channel as well as a size of the memory units. A memory system can operate with memory units configured to exchange (e.g., transfer to and/or from) data at a rate of smaller granularity that can provide more various options for channel widths, which can further allow a fine-tuned optimization of the memory system in association with its bandwidth and latency in transferring data from and/or to the memory units. The channels whose channel width is fine-tuned with such memory units can be further used to provide a reliability, availability, and serviceability (RAS) protection, such as a redundant array of independent disks (RAID) protection.

Abstract: Methods, systems, and devices for data correction schemes with reduced device overhead are described. A memory system may include a set of memory devices storing data and check codes associated with the data. The memory system may additionally include a single parity device storing parity information associated with the data. During a read operation of a set of data, a controller of the memory system may detect an error in data associated with a first check code, the data including two or more subsets of the set of data received from two or more corresponding memory devices. The controller may generate candidate data corresponding to one of the two or more subsets using the parity information and remaining subsets of the set of data. Then the controller may determine whether the candidate data is correct by comparing the first check code with a check value generated using the candidate data.

Abstract: A memory system can be provided with error detection capabilities at various levels and authentication and integrity check capabilities in parallel with data security schemes. The error detection capabilities can check for any errors not only on data paths within a memory controller, but also on data stored in memory devices. The authentication capabilities provided in parallel with the data security schemes can ensure/strengthen data integrity of the memory system to be compliant with standardized requirements and/or protocols, such as trusted execution engine security protocol (TSP).

Abstract: The present disclosure includes apparatuses and methods for buffer reset commands for write buffers. An example apparatus includes a memory and a controller coupled to the memory. The memory can include an array of resistance variable memory cells configured to store data corresponding to a managed unit across multiple partitions each having a respective write buffer corresponding thereto. The controller can be configured to update the managed unit by providing, to the memory, a write buffer reset command followed by a write command. The memory can be configured to execute the write buffer reset command to place the write buffers in a reset state. The memory can be further configured to execute the write command to modify the content of the write buffers based on data corresponding to the write command and write the modified content of the write buffers to an updated location in the array.

Abstract: One or more data blocks of a write command can be written to memory devices independently of other data blocks that are grouped together for an error correction operation with the data blocks. Further, data blocks of different write commands can be executed together and simultaneously rather than being executed separately at different times, which can reduce the latencies associated with executing the write commands.

Abstract: Some memory dice in a stack can be connected externally to the stack and other memory dice in the stack can be connected internally to the stack. The memory dice that are connected externally can act as interface dice for other memory dice that are connected internally thereto. Data protection and recovery schemes provided for the stacks of memory dice can be based on data that are transferred in a single data stream without a discontinuity between those data transfers from the memory dice of the stacks.

Abstract: Methods, systems, and devices related to mapping a plurality of pairs of bits of a memory transfer block (MTB) to a plurality of linked (LK) die input/output (LDIO) lines coupling a LK die to an interface (IF) die. The plurality of pairs of bits of the MTB can be communicated from the LK die to the IF die via the plurality of LDIO lines. Responsive to a failure of one of the plurality of LDIO lines, a Bose-Chaudhuri-Hocquenghem (BCH) error correction can be performed on the pairs of bits mapped to the failed LDIO line. Each of the plurality of pairs of bits is a respective symbol for the BCH error correction.

Abstract: The present disclosure relates to a memory device comprising a plurality of memory cells, each memory cell being programmable to a logic state corresponding to a threshold voltage exhibited by the memory cell in response to an applied voltage, and a logic circuit portion operatively coupled to the plurality of memory cells, wherein the logic circuit portion is configured to scan memory addresses of the memory device, and to generate seasoning pulses to be applied to the addressed pages of the memory device. A related electronic system and related methods are also disclosed.

Abstract: Devices, systems and methods for adaptively controlling a reset current of a memory cell are described. A system comprises: a mirror circuit with one branch coupled with a top electrode of the memory cell and the other branch coupled with one end of a resistive reference, and wherein a bottom electrode of the memory cell is coupled to a reference potential, the other end of the resistive reference is provided with a first electric potential; a control circuit; and a feedback circuit for feeding an electric potential to the top electrode of the memory cell.

Abstract: Methods, systems, and devices for address scrambling by linear maps in Galois fields are described. For instance, a device may determine a bijective matrix based on a power up condition. In some examples, the device may determine the bijective matrix based on a seed value and/or may select the matrix from among a set of bijective matrices. In some examples, the bijective matrix may have at least one column and/or one row that has at least two non-zero elements. The device may generate a first address of a first address space based on applying the matrix (e.g., each column of the matrix) to at least a portion of a second address of a second address space and may access a memory array of the device based on generating the first address.

Abstract: Methods, systems, and devices for operational modes for reduced power consumption in a memory system are described. A memory device may be coupled with a capacitor of a power management integrated circuit (PMIC). The memory device may operate in a first mode where a supply voltage is provided to the memory device from the PMIC. The memory device may operate in a second mode where it is isolated from the PMIC. When isolated, a node of the memory device (e.g., an internal node) may be discharged while the capacitor of the PMIC remains charged. When the memory device resumes operating in the first mode, a supply voltage may be provided to it based on the residual charge of the capacitor.

Abstract: The present disclosure relates to apparatuses and methods for memory management. The disclosure further relates to an interface protocol for flash memory devices including at least a memory array and a memory controller coupled to the memory array. A host device is coupled to the memory device through a communication channel and a hardware and/or software full encryption-decryption scheme is adopted in the communication channel for data, addresses and commands exchanged between the host device and the memory array.

Abstract: Provided is a computing system including a memory system in communication with a host, and for storing data therein and the memory system includes a memory having a plurality of memory components and a memory array and coupled to the controller via a memory interface. Each memory component includes a memory cyclic-redundancy-check (CRC) engine that performs a CRC check of data during read and write operations between the host and the memory array. The memory system also includes a controller that has a plurality of controller CRC engines and communicates with the memory components to control data transmission between the memory, the host and the memory array.

Abstract: Systems, apparatuses, and methods related to modified parity data using a poison data unit. An example method can include receiving, from a controller of a memory device, a first set of bits including data and a second set of at least one bit indicating whether the first set of bits comprises one or more erroneous or corrupted bits. The method can further include generating, at an encoder of the memory device, parity data associated with the first set of bits. The method can further include generating, at logic of the memory device, modified parity data with the parity data component and the second set of at least one bit. The method can further include writing the first set of bits and the modified parity data in an array of the memory device.

Abstract: The present disclosure includes apparatuses, methods, and systems for programming codewords for error correction operations to memory. An embodiment includes a memory having a plurality of groups of memory cells, wherein each respective one of the plurality of groups includes a plurality of sub-groups of memory cells, and circuitry configured to program a portion of a codeword for an error correction operation to one of the plurality of groups of memory cells by determining an address in that group of memory cells by performing an XOR operation on an address of one of the plurality of sub-groups of that group of memory cells, and programming the portion of the codeword to the determined address.

Abstract: Methods, systems, and devices for shared error correction coding (ECC) circuitry are described. For example, a memory device configured with shared ECC circuitry may be configured to receive data at the shared circuitry from either a host device or a set of memory cells of the memory device. The shared circuitry may be configured to generate a set of multiple syndromes associated with a cyclic error correction code, based on the received data. As part of an encoding process, an encoder circuit may generate a set of parity bits based on the generated syndromes. As part of a decoding process, a decoder circuit may generate an error vector for decoding the received data, based on the generated syndromes. The decoder circuit may also correct one or more errors in the received data based on generating the error vector.

Abstract: Methods, systems, and devices related to balancing data are described. Data may be communicated using an original set of bits that may be partitioned into segments. Each of the original set of bits may have a first value or a second value, where a weight of the original set of bits may be based on a quantity of the set of bits that have the first value. If the weight of the original set of bits is outside of a target weight range, a different, encoded set of bits may be used to represent the data, the encoded set of bits having a weight within the target weight range. The encoded set of bits may be identified based an inversion of the original set of bits in a one-at-a-time and cumulative fashion. The encoded set of bits may be stored in place of the original set of bits.

Abstract: Provided is a computing system including a memory system in communication with a host, and for storing data therein and the memory system includes a memory having a plurality of memory components and a memory array and coupled to the controller via a memory interface. Each memory component includes a memory cyclic-redundancy-check (CRC) engine that performs a CRC check of data during read and write operations between the host and the memory array. The memory system also includes a controller that has a plurality of controller CRC engines and communicates with the memory components to control data transmission between the memory, the host and the memory array.

Abstract: Methods, systems, and devices for timing parameter adjustment mechanisms are described. The memory system may receive an access command to access a block of data. Based on receiving the access command, the memory system may determine a parameter (e.g., a timing parameter) associated with accessing the block of data. The timing parameter may indicate a duration between a first time to access a first page of the block of data and a second time to access a second page of the block of data. The memory system may perform an access operation on the block of data based on determining the timing parameter.