Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

Abstract: A reticle conditioning system includes: a support structure to support a reticle; a gas supply module to provide a flow of gas adjacent to the reticle; and a biasing module to control an electrical potential of the reticle. The biasing module includes a first electrode, a second electrode and a voltage supply. The first and second electrodes are each spaced apart from and facing the reticle, when the reticle is supported by the support structure, so as to at least partially overlap with the reticle. The voltage supply is arranged to maintain the first electrode at a positive voltage, and the second electrode at a negative voltage, these voltages being such that the voltage of the reticle is negative. The second electrode is disposed such that, when the reticle is supported by the support structure, it does not overlap an image forming portion of the reticle.

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

Abstract: A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: A membrane cleaning apparatus for removing particles from a membrane, the apparatus including a membrane support and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may include: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.

Abstract: An apparatus for reducing a partially oxidized reticle and pellicle assembly, the apparatus including: a support; a hydrogen supply; and an electron source. The support is for supporting a reticle and pellicle assembly. The hydrogen supply is operable to supply hydrogen in the vicinity of a pellicle of a reticle and pellicle assembly when supported by the support. The electron source is operable to direct electrons so as to be incident on a pellicle of a reticle and pellicle assembly when supported by the support.

Abstract: A lithographic system and a method for exposing a substrate are provided. The method includes providing a plurality of mask sets. Each mask set includes complementary masks corresponding to a respective pattern. The method further comprises exposing the substrate with the plurality of mask sets. A stitch location between the complementary masks of a mask set is different than a stitch location between the complementary masks of each other mask set of the plurality of mask sets.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: An object holder configured to support an object, the object holder comprising: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers; and a circumferential barrier for reducing outflow of gas escaping from space between the object and the core body.

Abstract: A membrane cleaning apparatus for removing particles from a membrane, the apparatus including a membrane support and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may include: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.

Abstract: An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Abstract: Embodiments herein describe methods, devices, and systems for reducing an electric field at a clamp-reticle interface using an enhanced electrostatic clamp. In particular, the electrostatic clamp includes a clamp body, an electrode layer disposed on a top surface of the clamp body, and a plurality of burls that project from a bottom surface of the clamp body, wherein the electrode layer comprises a plurality of cutouts at predetermined locations that vertically correspond to locations of the plurality of burls at the bottom surface of the clamp body.

Abstract: A substrate handling system comprising a substrate holder comprising a main body with a main body surface, and a plurality of burls projecting from the main body surface to support the substrate spaced apart from the main body surface, clamping means, the clamping means being configured to clamp and/or unclamp the substrate onto the substrate holder, and conveying means, the conveying means being configured to load and/or unload the substrate onto the substrate holder, wherein the conveying means is further configured to physically contact the substrate during the clamping and/or unclamping to the substrate holder. It is also described methods for clamping and unclamping a substrate, a computer program, a computer-readable medium and a lithography apparatus.

Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

Abstract: A pellicle membrane for a lithographic apparatus, the membrane including uncapped carbon nanotubes. A method of regenerating a pellicle membrane, the method including decomposing a precursor compound and depositing at least some of the products of decomposition onto the pellicle membrane. A method of reducing the etch rate of a pellicle membrane, the method including providing an electric field in the region of the pellicle membrane to redirect ions from the pellicle, or heating elements to desorb radicals from the pellicle, preferably wherein the pellicle membrane is a carbon nanotube pellicle membrane. An assembly for a lithographic apparatus, the assembly including a biased electrode near or including the pellicle membrane or heating means for the pellicle membrane.

Abstract: A lithographic apparatus including a substrate stage for supporting a structure in a compartment, the compartment having a compartment surface facing a top surface of the substrate in at least one operational configuration; and a soft coating on the compartment surface for capturing particles. A heat shield or component thereof for a lithographic apparatus, the heat shield or component thereof including a soft coating on at least one surface for capturing particles and a lithographic apparatus including such a heat shield.

Abstract: Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.