Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode including a first electrode layer located on the piezoelectric substrate and including one of Mo and W as a main component and a second electrode layer laminated on the first electrode layer and including Cu as a main component, and a dielectric film located on the piezoelectric substrate and covering the IDT electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device utilizes Rayleigh waves propagating along the piezoelectric substrate.

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode including a first electrode layer which is provided on the piezoelectric substrate and contains Pt as a main component and a second electrode layer which is laminated on the first electrode layer and contains Cu as a main component, and a dielectric film that is provided on the piezoelectric substrate and covers the IDT electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device uses Rayleigh waves propagating along the piezoelectric substrate.

Abstract: An elastic wave device includes a piezoelectric substrate that includes first and second main surfaces which face each other, an interdigital transducer electrode that is provided on the first main surface of the piezoelectric substrate and includes a first electrode layer containing molybdenum as a main component, and a dielectric film that is provided on the piezoelectric substrate and covers the interdigital transducer electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device utilizes Rayleigh waves propagating through the piezoelectric substrate. The duty ratio of the interdigital transducer electrode is equal to or more than about 0.55 and less than or equal to about 0.75.

Abstract: A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency.

Abstract: A surface acoustic wave device includes a piezoelectric substrate including a groove located in a surface thereof, an IDT electrode, and a dielectric film. The IDT electrode includes a first electrode layer located in the groove and a second electrode layer located outside the groove. The dielectric film is arranged on the piezoelectric substrate so as to cover the IDT electrode. The second electrode layer is tapered toward a side opposite to the piezoelectric substrate.

Abstract: A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency.

Abstract: A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency.

Abstract: A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency.