Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer (30) being an aluminum-oxygen compound; wherein, when the 3d5/2 spectrum of tin in the aluminum-oxygen compound layer (30) is determined using an X-ray photoelectron spectroscopy, the ratio of the integration value of the profile derived from tin oxide to the integration value of the profile derived from tin phosphate (tin oxide/tin phosphate) is 6.9 or more.

Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) formed on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer being an aluminum-oxygen compound.

Abstract: The present disclosure provides an organic semiconductor single crystal film that can be disposed on a desired substrate and has a thickness thinner than that of a conventional film. The present disclosure is directed to an organic semiconductor device comprising: a substrate; and an organic semiconductor single crystal film on the substrate, wherein an average film thickness of the organic semiconductor single crystal film is 2 to 100 nm, and at least a portion of a surface of the substrate in contact with the organic semiconductor single crystal film is hydrophobic, solvent soluble, non-heat resistant, or a combination thereof.

Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) formed on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer being an aluminum-oxygen compound.

Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer (30) being an aluminum-oxygen compound; wherein, when the 3 d5/2 spectrum of tin in the aluminum-oxygen compound layer (30) is determined using an X-ray photoelectron spectroscopy, the ratio of the integration value of the profile derived from tin oxide to the integration value of the profile derived from tin phosphate (tin oxide/tin phosphate) is 6.9 or more.

Abstract: Provided is a method for producing a surface-treated steel sheet including the step of forming a layer mainly composed of an oxygen compound containing Al onto a tin-plated steel sheet by conducting cathode electrolytic treatment to the tin-plated steel sheet using an electrolytic treatment solution containing Al ions and nitrate ions. For the electrolytic treatment solution, an electrolytic treatment solution not containing F ions and where the amount of nitrate ions contained is 11,500 to 25,000 ppm by weight is used.

Abstract: Provided is a construction machine including an exhaust-gas after-treatment device and capable of supporting the exhaust-gas after-treatment device in a limited space. The construction machine includes an upper frame, an engine mounted on the upper frame via a plurality of engine mounts, a hydraulic pump coupled to the engine, the exhaust-gas after-treatment device, and a support cradle supporting the exhaust-gas after-treatment device over the hydraulic pump. The upper frame includes a plurality of mount support portions and a leg support portion. The support cradle includes a support stage on which the exhaust-gas after-treatment device is mounted, and a plurality of legs. The plurality of mount support portions include a space-defining mount support portion defining a horizontal space against the hydraulic pump. The plurality of legs include an in-space leg extending in the space. The leg support portion is located to overlap the space in a plan view.

Abstract: Provided is an energy storage dye-sensitized solar cell having a simple structure. An energy storage dye-sensitized solar cell of the present invention has a photoelectrode and a charge storage electrode on the same surface of a conductive substrate such that the photoelectrode and the charge storage electrode act as one electrode. Hence, the energy storage dye-sensitized solar cell comprises two electrodes: the above-described one electrode and a counter electrode covered with a catalyst, thus having a simple structure.

Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) formed on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer being an aluminum-oxygen compound.

Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer (30) being an aluminum-oxygen compound; wherein, when the 3d5/2 spectrum of tin in the aluminum-oxygen compound layer (30) is determined using an X-ray photoelectron spectroscopy, the ratio of the integration value of the profile derived from tin oxide to the integration value of the profile derived from tin phosphate (tin oxide/tin phosphate) is 6.9 or more.

Abstract: Provided is a construction machine including an exhaust-gas after-treatment device and capable of supporting the exhaust-gas after-treatment device in a limited space. The construction machine includes an upper frame, an engine mounted on the upper frame via a plurality of engine mounts, a hydraulic pump coupled to the engine, the exhaust-gas after-treatment device, and a support cradle supporting the exhaust-gas after-treatment device over the hydraulic pump. The upper frame includes a plurality of mount support portions and a leg support portion. The support cradle includes a support stage on which the exhaust-gas after-treatment device is mounted, and a plurality of legs. The plurality of mount support portions include a space-defining mount support portion defining a horizontal space against the hydraulic pump. The plurality of legs include an in-space leg extending in the space. The leg support portion is located to overlap the space in a plan view.

Abstract: Provided is an energy storage dye-sensitized solar cell having a simple structure. An energy storage dye-sensitized solar cell (1) of the present invention has a photoelectrode (2) and a charge storage electrode (3) on the same surface of a conductive substrate (5) such that the photoelectrode (2) and the charge storage electrode (3) act as one electrode. Hence, the energy storage dye-sensitized solar cell comprises two electrodes: the above-described one electrode and a counter electrode (9) covered with a catalyst (4), thus having a simple structure.

Abstract: Provided is a method for producing a surface-treated steel sheet including the step of forming a layer mainly composed of an oxygen compound containing Al onto a tin-plated steel sheet by conducting cathode electrolytic treatment to the tin-plated steel sheet using an electrolytic treatment solution containing Al ions and nitrate ions. For the electrolytic treatment solution, an electrolytic treatment solution not containing F ions and where the amount of nitrate ions contained is 11,500 to 25,000 ppm by weight is used.

Abstract: A display device includes: a monitor and receiving set having a video signal receiving section, a display section, an image quality control section, a first control signal transceiver, and a first control section; and a control and transmission set having a television broadcast receiving section, a video signal input section, a video signal transmitting section, a second control signal transceiver, a key input section, and a second control section. The Power consumption of a first radio transmission path formed by the video signal transmitting section and the video signal receiving section is larger than that of a second radio transmission path formed by the first and second control signal transceivers. A control signal for a user interface is communicated by the first and second control signal transceivers. Only the second radio transmission path of the first and second radio transmission paths is communicable in a standby state.

Abstract: A microchannel chip having a microchannel formed in a substrate and a gas-liquid phase separation microchannel whose upper part is covered with a porous film, the gas-liquid phase separation microchannel being connected to the downstream end of the microchannel and having a depth of 10 ?m to 100 ?m. Also, a gas-liquid phase separation method which is a method for separating a liquid-phase flow from a two-phase flow flowing through a microchannel by removing a gas phase, the two-phase flow composed of the gas phase and the liquid phase, which liquid phase flows in the periphery of the above-described microchannel and which gas phase flows interiorly of the liquid-phase flow.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.