Abstract: A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 1017 cm?3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.

Abstract: Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

Abstract: A membrane assembly for EUV lithography, the membrane assembly including: a planar membrane; a border configured to hold the membrane; and a frame assembly connected to the border and configured to attach to a patterning device for EUV lithography, wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.

Abstract: A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 1017 cm?3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.

Abstract: A method of obtaining information indicative of the topography of a surface of a flexible substrate, the method including directing a beam of radiation at the surface of the flexible substrate; and detecting changes in intensity distribution, or angle of reflection, of the beam of radiation after the beam of radiation has been reflected from the surface of the substrate to obtain information indicative of the topography of the surface of the flexible substrate.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate including a body region having a first conductivity type. The device also includes an array of interconnected trenches extending into the body region from a surface of the substrate. The device further includes a plurality of channel stoppers. Each channel stopper includes a doped region of the first conductivity type located at a side of one or more of the trenches at a position intermediate a top of the trench and a bottom of the trench.

Abstract: A method for manufacturing a thermoelectric generator includes the steps of replicating a structure into a flexible substrate for providing a set of cavities; providing an initiator in the cavities for growing respective piles of thermoelectric materials; growing the respective piles of thermoelectric materials from said initiator; and providing electrical connection between the respective piles of thermoelectric materials for forming thermocouples of the thermoelectric generator.

Abstract: The invention provides a method for preparing a pattern for an electric circuit comprising the steps of: (a) providing a substrate; (b) providing a pattern of an inhibiting material for an electrical circuit onto said substrate by i) applying a layer of the inhibiting material onto said substrate and mechanically removing locally the layer of the inhibiting material to obtain said pattern; or ii) applying a layer of the inhibiting material onto said substrate, wherein said layer has pre-determined pattern which incompletely covers said substrate; (c) establishing a distribution of particles of a first metal or alloy thereof on the layer of the inhibiting material and the pattern as obtained in step.

Abstract: The invention relates to a method 10 for forming a multi-level surface on a substrate 2, wherein said surface comprises areas of different wettability, the method comprising the step (A, B) of applying a multi-level stamp to the substrate for forming the multi-level surface, said multi-level stamp having different structural regions 1a arranged along the multi-level surface for locally altering wettability properties of at least a portion of a level of the multi-level surface 2a, 2b. The invention further relates to a semiconductor device and a method for manufacturing a semiconductor device.

Abstract: The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1).

Abstract: This application describes methods and apparatus for monitoring of fluid content that are suitable for in-situ, real time and/or continuous monitoring, especially of bodily fluids and in particular the content of sweat. The application also describes fabrication of such an apparatus. The apparatus comprises a multilayer structure comprising at least two electrode layers for detection of fluid content separated by at least one insulating layer. The multilayer structure defines at least one flow channel which provides a flow path for continuous flow of fluid in use, and the electrode layers form part of the sidewall of the flow channel(s). The flow channel(s) may run in a direction substantially perpendicular to the layers. The electrode layers may employ electrochemical detection and may comprise a reference electrode and an ion-sensitive electrode. The apparatus may be fabricated using various printing or deposition techniques.

Abstract: According to one aspect, the invention provides a table for compensating deformation in flexible foils (1) The table comprises a supportive base (2) and a deformation compensation system (3). This system comprises a plurality of movable elements (4), supported by the base (2), wherein the movable elements form a surface for supporting the flexible foil. The movable elements comprise clamps (6) for clamping the foil (5). The movable elements (4) are individually movable parallel to the surface for supporting the foil, so as to stretch the clamped foil into a predefined shape. The table for compensating deformation in flexible foils may be used in a manufacturing process of flexible functional foils to compensate deformation of the foils during sequential patterning.

Abstract: A data processing apparatus has an instruction memory system arranged to output an instruction word addressed by an instruction address. An instruction execution unit, processes a plurality of instructions from the instruction word in parallel. A detection unit, detects in which of a plurality of ranges the instruction address lies. The detection unit is coupled to the instruction execution unit and/or the instruction memory system, to control a way in which the instruction execution unit parallelizes processing of the instructions from the instruction word, dependent on a detected range. In an embodiment the instruction execution unit and/or the instruction memory system adjusts a width of the instruction word that determines a number of instructions from the instruction word that is processed in parallel, dependent on the detected range.

Abstract: In a method for printing on a substrate, in particular a textile substrate, with the aid of an inkjet printing device, a print image to be printed is constructed by drop-by-drop deposition of one or more ink fluids in picture elements which together form the print image, an ink fluid comprising at least one predetermined concentration of at least one dye in a main solvent. The method includes for this purpose the following steps: (a) the determination of the color value of a picture element from the print image, (b) the determination of one or more dye-comprising ink fluids, in dependence on the determined color value, (c) the determination of colorless transport fluid to be applied to the picture element, in dependence on the determined color value, (d) the determination of a colorless auxiliary fluid, comprising rheology-modifying agents, in dependence on the determined color value, and (e) the application of the ink fluids, the transport fluid and the auxiliary fluid to the picture element.

Abstract: A method of obtaining information indicative of the topography of a surface of a flexible substrate, the method including directing a beam of radiation at the surface of the flexible substrate; and detecting changes in intensity distribution, or angle of reflection, of the beam of radiation after the beam of radiation has been reflected from the surface of the substrate to obtain information indicative of the topography of the surface of the flexible substrate.

Abstract: An assembly comprising a fluid channel and a flowmeter, the flowmeter (1) comprising at least one vortex shedder (2) extending in the channel (C), each vortex shedder (2) being configured to generate Karman vortices (V) in fluid flowing through the channel (C) during operation, wherein each vortex shedder (2) is provided with a first fiber Bragg grating (FBG) of a fiber Bragg grating sensor (3, 7, FBG), wherein a Karman vortex frequency (fe) of the vortices (V) generated by the vortex shedder (2) is detectable utilizing a fiber Bragg grating (FBG) sensor signal relating to the respective first fiber Bragg grating (FBG) of that vortex shedder (2).

Abstract: The invention relates to a method 10 for forming a multi-level surface on a substrate 2, wherein said surface comprises areas of different wettability, the method comprising the step (A, B) of applying a multi-level stamp to the substrate for forming the multi-level surface, said multi-level stamp having different structural regions 1a arranged along the multi-level surface for locally altering wettability properties of at least a portion of a level of the multi-level surface 2a, 2b. The invention further relates to a semiconductor device and a method for manufacturing a semi-conductor device.