Abstract: A thin film structure for photovoltaic applications includes a biaxially textured metal substrate; a seed layer epitaxially disposed on the metal substrate; a barrier layer comprising SrTiO3 epitaxially disposed on the seed layer; a cap layer comprising ?-Al2O3 epitaxially disposed on the SrTiO3 barrier layer; and a crystalline silicon layer epitaxially disposed on the cap layer, where the cap layer comprises a volume fraction of biaxial texture of at least about 80% and the crystalline silicon layer does not include a metal silicide phase.

Abstract: An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer.

Abstract: A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material.

Abstract: Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum ions during a discharge cycle and deintercalating the aluminum ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum at the cathode.

Abstract: Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum or lithium ions during a discharge cycle and deintercalating the aluminum or lithium ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum or lithium at the cathode.

Abstract: A method of making a superconducting article that involves using MOCVD to deposit onto a uniaxially or biaxially textured surface an epitaxial layer that includes a superconducting material such as REBa2Cu3O7 and a secondary phase comprising at least one dopant, the dopant including Nb, Ta and/or V, or combinations thereof.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: Crystal silicon processes and products (100) are disclosed. In any exemplary embodiment, a biaxially textured metal substrate (110) was fabricated by the Rolling-Assisted Biaxially Textured Substrate (RABiTS) process. Electron beam evaporation was used to grow buffer layers (120) heteroepitaxially on the metal substrate (110) as a buffer layer (120). After growth of the buffer layer (120), a silicon layer was grown using hot wire chemical vapor deposition (HWCVD). The silicon film had the same grain size as the underlying metal substrate (110). In addition, the orientation of these grains matched the orientations of the underlying metal substrate (110).

Abstract: An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer.

Abstract: The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.

Abstract: A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y2O3 and a dopant for blocking cation diffusion through the Y2O3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.