Abstract: A memory device according to one embodiment includes a memory cell array, bit lines, amplifier units, a controller, and a register. The memory cell array includes a memory cell that stores data nonvolatilely. The bit lines are connected to the memory cell array. The sense amplifier units are connected to the bit lines, respectively. The controller performs a write operation. The register stores status information of the write operation. The memory cell array includes a first storage region specified by a first address. The plurality of sense amplifier modules include a buffer region capable of storing data.

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The memory system is capable of executing a first operation and a second operation. In the first operation, the controller issues a first command sequence, the semiconductor memory applies a first voltage to a first word line and applies a second voltage to a second word line to read data from the first memory, and the read data is transmitted to the controller from the semiconductor memory. In the second operation, the controller issues a second command sequence, the semiconductor memory applies a third voltage to the first word line and applies a fourth voltage to the second word line, and data held in the memory cell array is left untransmitted to the controller.

Abstract: According to an embodiment, a controller acquires a first temperature detection value and executes an acquisition operation on a first storage area. The controller converts a first voltage value into a second voltage value representing the read voltage in a temperature set value based on the first temperature detection value and records the second voltage value. The acquisition operation is an operation of determining, by using the read voltages, whether memory cells are ON or OFF and acquiring the first voltage value representing the read voltage for suppressing error bits. After that, the controller acquires a second temperature detection value and converts the second voltage value into a third voltage value representing the read voltage in the second temperature detection value. The controller reads data from the memory cells by using, as the read voltage, a voltage indicated by the third voltage value.

Abstract: According to one embodiment, a memory system includes: a controller configured to execute an error correction process on first data read from a first area at a first address of a memory device and determine a read level used for reading data at the first address according to a result of the correction process. The controller executes the correction process on first frame data of the first data. When the correction process on the first frame data has failed, the controller executes the correction process on second frame data of the first data. When the correction process on the second frame data has succeeded, the controller determines the read level based on a result of comparison between the second frame data and a result of the correction process on the second frame data.

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes: first memory cells, first word lines, a first row decoder, and a driver circuit. The first row decoder includes first transistors capable of coupling the first word lines to first signal lines, and a first block decoder supplying a first block selection signal to the first transistors. When the controller issues a data read command, the first block decoder asserts the first block selection signal to allow the first transistors to transfer a first voltage to a selected first word line, and a second voltage to unselected other first word lines. After data is read, the first block decoder continues asserting the first block selection signal, and the driver circuit transfers a third voltage.

Abstract: In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The memory system is capable of executing a first operation and a second operation. In the first operation, the controller issues a first command sequence, the semiconductor memory applies a first voltage to a first word line and applies a second voltage to a second word line to read data from the first memory, and the read data is transmitted to the controller from the semiconductor memory. In the second operation, the controller issues a second command sequence, the semiconductor memory applies a third voltage to the first word line and applies a fourth voltage to the second word line, and data held in the memory cell array is left untransmitted to the controller.

Abstract: A memory system includes a first memory cell array which is a nonvolatile memory cell array, a controller configured to control read and write of data, a first data latch group used for input and output of the data between the controller and the first memory cell array, and at least one second data latch group in which stored data is maintained when the data is read from the first memory cell array by the controller. The controller is configured to store management information in the at least one second data latch group when or before executing a read process for the data from the first memory cell array, the management information being in a second memory cell array and used for read of the data.

Abstract: A memory system includes a nonvolatile memory including memory cells each configured to store first and second bits, and a memory controller. The memory controller is configured to: read first data by using a first voltage to a first read process that reads data corresponding to the first bit from the memory cells; read second data by using a second voltage to a second read process that reads data corresponding to the second bit from the memory cells; in a case where an error correction process of the first data is successful, determine a third voltage, based on the first data and third data that is obtained by error-correcting the first data; and update a first read voltage that is used to the first read process, from the first voltage to the third voltage.

Abstract: A memory system according to an embodiment includes a memory device, and a memory controller. The memory device includes first and second memory cells, a first word line, and first and second bit lines. The first and second memory cells are provided in first and second layers, respectively. The first word line is coupled to the first memory cell and the second memory cell. The first bit line is coupled to the first memory cell. The second bit line is coupled to the second memory cell. The memory controller includes a storage circuit capable of storing a correction value table. The correction value table is configured to store a first correction value of a read voltage associated with the first layer and a second correction voltage of a read voltage associated with the second layer.

Abstract: A memory system is provided, including a semiconductor storage device including memory cells that can store data of n bits, and a word line connected to the cells; and a memory controller to control the device and being configured to send a first read request, in response to which the device can perform a first read operation of reading first data out of the cells with a first voltage applied to the word line, to send a second read request, in response to which the device can perform a second read operation of reading second data out of the cells with a second voltage within a first voltage range and a third voltage within a second voltage range applied to the word line, perform a first logical operation of logically processing the first and the second data, and send third data generated by the first logical operation to the controller.

Abstract: A memory system according to an embodiment includes a memory device, and a memory controller. The memory device includes first and second memory cells, a first word line, and first and second bit lines. The first and second memory cells are provided in first and second layers, respectively. The first word line is coupled to the first memory cell and the second memory cell. The first bit line is coupled to the first memory cell. The second bit line is coupled to the second memory cell. The memory controller includes a storage circuit capable of storing a correction value table. The correction value table is configured to store a first correction value of a read voltage associated with the first layer and a second correction voltage of a read voltage associated with the second layer.

Abstract: According to an embodiment, a memory controller obtains first data in a first page using a first voltage, obtains a first shift amount based on a first and second number. The first and second numbers represent numbers of bits each of which has different values in a first and second manner between the first data and first expected data. The controller obtains second data in the second page using a second voltage and a second shift amount, and obtains a third shift amount based on a third and fourth number, the third and fourth numbers respectively represent numbers of bits each of which has different values in the first and second manner between the second data and second expected data.

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.

Abstract: In connection with a write operation, a memory controller transmits a first command sequence to a memory chip, thereby causing the memory chip to execute a first-stage program operation that includes a first operation and a first part of a second operation after the first operation, and a second command sequence to the memory chip after the first-stage program operation is executed, thereby causing the memory chip to execute a second-stage program operation that includes a second part of the second operation and no part of the first operation. During the first operation, a program voltage is applied a plurality of times while increasing the program voltage each of the times by a first step size. During the second operation, the program voltage is applied a plurality of times while increasing the program voltage each of the times by a second step size smaller than the first step size.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory including a plurality of blocks each including a plurality of cell units, each of the cell units including a plurality of memory cells; and a memory controller. The memory controller is configured to read second data from a second cell unit in a first block in response to first data being written in a first cell unit in the first block, and reserve refresh processing for the first block when the second data satisfies a condition.

Abstract: According to one embodiment, a memory system includes: a controller configured to execute an error correction process on first data read from a first area at a first address of a memory device and determine a read level used for reading data at the first address according to a result of the correction process. The controller executes the correction process on first frame data of the first data. When the correction process on the first frame data has failed, the controller executes the correction process on second frame data of the first data. When the correction process on the second frame data has succeeded, the controller determines the read level based on a result of comparison between the second frame data and a result of the correction process on the second frame data.

Abstract: According to one embodiment, a memory system includes a semiconductor memory device and a controller. The device includes a plurality of memory cells capable of storing at least first to third data and a word line coupled to the plurality of memory cells. The first data is determined by a first read operation including a first read level. The second data is determined by a second read operation including a second read level. The third data is determined by a third read operation including a third read level. The controller controls the semiconductor memory device to perform a forth read operation including the first and second read levels in a search operation for first to third read voltages corresponding to the first to third read levels, respectively.