Patents by Inventor Marie Takada

Marie Takada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210165713
    Abstract: In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.
    Type: Application
    Filed: February 12, 2021
    Publication date: June 3, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Tsukasa TOKUTOMI, Masanobu SHIRAKAWA, Marie TAKADA, Masamichi FUJIWARA, Kazumasa YAMAMOTO, Naoaki KOKUBUN, Tatsuro HITOMI, Hironori UCHIKAWA
  • Patent number: 11017863
    Abstract: According to an embodiment, a semiconductor memory, on receiving a first command, applies a voltage within a first range and a voltage within a second range to a word line and reads a first bit from a memory cell, and, on receiving a second command, applies a voltage within a third range to the word line and reads a second bit from the memory cell. The controller issues the first command a plurality of times and changes the voltages to be applied to the word line within the first range and the second range in accordance with the plurality of first commands, specifies a first and second voltage within the first and the second range, respectively, and estimates a third voltage within the third range. The voltage applied to read the second bit is the estimated third voltage.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: May 25, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tsukasa Tokutomi, Masanobu Shirakawa, Marie Takada
  • Patent number: 11004523
    Abstract: According to one embodiment, a nonvolatile memory includes: a memory cell array including memory cells; and a controller configured to execute a first refresh process on receiving a first command. The first refresh process includes reprogramming at least one second memory cell among first memory cells to which data has been programmed in a first group. In executing the first refresh process, the controller is configured to: select the second memory cell by verifying with a first voltage using a first amount in a case where the second memory cell has been programmed using the first voltage; and select the second memory cell by verifying with a second voltage using a second amount in a case where the second memory cell has been programmed using the second voltage.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: May 11, 2021
    Assignee: Toshiba Memory Coiporation
    Inventors: Riki Suzuki, Masanobu Shirakawa, Yoshihisa Kojima, Marie Takada, Tsukasa Tokutomi
  • Publication number: 20210134360
    Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
    Type: Application
    Filed: January 7, 2021
    Publication date: May 6, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Tomonori TAKAHASHI, Masanobu SHIRAKAWA, Osamu TORII, Marie TAKADA
  • Publication number: 20210110875
    Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.
    Type: Application
    Filed: December 22, 2020
    Publication date: April 15, 2021
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Tsukasa TOKUTOMI, Masanobu SHIRAKAWA, Marie TAKADA, Shohei ASAMI, Masamichi FUJIWARA
  • Publication number: 20210110874
    Abstract: According to one embodiment, a memory system includes a semiconductor memory device and a controller. The device includes a plurality of memory cells capable of storing at least first to third data and a word line coupled to the plurality of memory cells. The first data is determined by a first read operation including a first read level. The second data is determined by a second read operation including a second read level. The third data is determined by a third read operation including a third read level. The controller controls the semiconductor memory device to perform a forth read operation including the first and second read levels in a search operation for first to third read voltages corresponding to the first to third read levels, respectively.
    Type: Application
    Filed: December 22, 2020
    Publication date: April 15, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Masanobu SHIRAKAWA, Tsukasa TOKUTOMI, Marie TAKADA
  • Publication number: 20210104282
    Abstract: According to an embodiment, a semiconductor memory, on receiving a first command, applies a voltage within a first range and a voltage within a second range to a word line and reads a first bit from a memory cell, and, on receiving a second command, applies a voltage within a third range to the word line and reads a second bit from the memory cell. The controller issues the first command a plurality of times and changes the voltages to be applied to the word line within the first range and the second range in accordance with the plurality of first commands, specifies a first and second voltage within the first and the second range, respectively, and estimates a third voltage within the third range. The voltage applied to read the second bit is the estimated third voltage.
    Type: Application
    Filed: December 18, 2020
    Publication date: April 8, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Tsukasa TOKUTOMI, Masanobu SHIRAKAWA, Marie TAKADA
  • Publication number: 20210096949
    Abstract: According to an embodiment, a memory controller obtains first data in a first page using a first voltage, obtains a first shift amount based on a first and second number. The first and second numbers represent numbers of bits each of which has different values in a first and second manner between the first data and first expected data. The controller obtains second data in the second page using a second voltage and a second shift amount, and obtains a third shift amount based on a third and fourth number, the third and fourth numbers respectively represent numbers of bits each of which has different values in the first and second manner between the second data and second expected data.
    Type: Application
    Filed: November 6, 2020
    Publication date: April 1, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Kengo KUROSE, Masanobu SHIRAKAWA, Marie TAKADA
  • Publication number: 20210089233
    Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a plurality of storage blocks, each including a shift register. The control circuit controls writing and reading of data to and from the nonvolatile memory. The control circuit is configured to: read target data from a first storage block of the plurality of storage blocks; and write the target data read from the first storage block to a second storage block of the plurality of storage blocks, the second storage block being different from the first storage block.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 25, 2021
    Applicant: Kioxia Corporation
    Inventors: Yoshihiro UEDA, Naomi TAKEDA, Masanobu SHIRAKAWA, Marie TAKADA
  • Publication number: 20210089392
    Abstract: According to one embodiment, a memory system controls a shift resister memory and writes encoded data including a plurality of error correction code frames into a block of the shift resister memory. The memory system is configured to store, into a location corresponding to a first layer in a first data storing shift string, first data included in a first error correction code frame, to store, into a location corresponding to a second layer in the first data storing shift string, second data included in a second error correction code frame, and to store, into a location corresponding to the second layer in a second data storing shift string, third data included in the first error correction code frame.
    Type: Application
    Filed: March 3, 2020
    Publication date: March 25, 2021
    Applicant: Kioxia Corporation
    Inventors: Masanobu SHIRAKAWA, Hideki YAMADA, Marie TAKADA, Ryo YAMAKI, Osamu TORII, Naomi TAKEDA
  • Patent number: 10956264
    Abstract: In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: March 23, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tsukasa Tokutomi, Masanobu Shirakawa, Marie Takada, Masamichi Fujiwara, Kazumasa Yamamoto, Naoaki Kokubun, Tatsuro Hitomi, Hironori Uchikawa
  • Publication number: 20210082510
    Abstract: In connection with a write operation, a memory controller transmits a first command sequence to a memory chip, thereby causing the memory chip to execute a first-stage program operation that includes a first operation and a first part of a second operation after the first operation, and a second command sequence to the memory chip after the first-stage program operation is executed, thereby causing the memory chip to execute a second-stage program operation that includes a second part of the second operation and no part of the first operation. During the first operation, a program voltage is applied a plurality of times while increasing the program voltage each of the times by a first step size. During the second operation, the program voltage is applied a plurality of times while increasing the program voltage each of the times by a second step size smaller than the first step size.
    Type: Application
    Filed: February 26, 2020
    Publication date: March 18, 2021
    Inventors: Hideki YAMADA, Marie TAKADA, Masanobu SHIRAKAWA
  • Patent number: 10923186
    Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: February 16, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tomonori Takahashi, Masanobu Shirakawa, Osamu Torii, Marie Takada
  • Patent number: 10910066
    Abstract: According to one embodiment, a memory system includes a semiconductor memory device and a controller. The device includes a plurality of memory cells capable of storing at least first to third data and a word line coupled to the plurality of memory cells. The first data is determined by a first read operation including a first read level. The second data is determined by a second read operation including a second read level. The third data is determined by a third read operation including a third read level. The controller controls the semiconductor memory device to perform a forth read operation including the first and second read levels in a search operation for first to third read voltages corresponding to the first to third read levels, respectively.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: February 2, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Masanobu Shirakawa, Tsukasa Tokutomi, Marie Takada
  • Patent number: 10910067
    Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: February 2, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Tsukasa Tokutomi, Masanobu Shirakawa, Marie Takada, Shohei Asami, Masamichi Fujiwara
  • Publication number: 20210027811
    Abstract: According to one embodiment, a semiconductor memory device includes: a first memory cell; a second memory cell; a first word line; a second word line; and a first bit line. The first memory cell faces the second memory cell. When reading data from the first memory cell, the semiconductor memory device is configured to perform the first operation in which a first voltage is applied to the first word line and a second voltage higher than the first voltage is applied to the second word line, and perform the second operation in which a third voltage higher than the first voltage and a fourth voltage different from the third voltage are applied to the first word line and a fifth voltage lower than the second to the fourth voltage is applied to the second word line.
    Type: Application
    Filed: October 13, 2020
    Publication date: January 28, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Marie TAKADA, Masanobu SHIRAKAWA, Tukuya FUTATSUYAMA
  • Patent number: 10902923
    Abstract: According to an embodiment, a semiconductor memory, on receiving a first command, applies a voltage within a first range and a voltage within a second range to a word line and reads a first bit from a memory cell, and, on receiving a second command, applies a voltage within a third range to the word line and reads a second bit from the memory cell. The controller issues the first command a plurality of times and changes the voltages to be applied to the word line within the first range and the second range in accordance with the plurality of first commands, specifies a first and second voltage within the first and the second range, respectively, and estimates a third voltage within the third range. The voltage applied to read the second bit is the estimated third voltage.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: January 26, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tsukasa Tokutomi, Masanobu Shirakawa, Marie Takada
  • Publication number: 20200402581
    Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes: first memory cells, first word lines, a first row decoder, and a driver circuit. The first row decoder includes first transistors capable of coupling the first word lines to first signal lines, and a first block decoder supplying a first block selection signal to the first transistors. When the controller issues a data read command, the first block decoder asserts the first block selection signal to allow the first transistors to transfer a first voltage to a selected first word line, and a second voltage to unselected other first word lines. After data is read, the first block decoder continues asserting the first block selection signal, and the driver circuit transfers a third voltage.
    Type: Application
    Filed: September 8, 2020
    Publication date: December 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masanobu SHIRAKAWA, Marie TAKADA, Tsukasa TOKUTOMI, Yoshihisa KOJIMA, Kiichi TACHI
  • Publication number: 20200402596
    Abstract: According to one embodiment, a nonvolatile memory includes: a memory cell array including memory cells; and a controller configured to execute a first refresh process on receiving a first command. The first refresh process includes reprogramming at least one second memory cell among first memory cells to which data has been programmed in a first group. In executing the first refresh process, the controller is configured to: select the second memory cell by verifying with a first voltage using a first amount in a case where the second memory cell has been programmed using the first voltage; and select the second memory cell by verifying with a second voltage using a second amount in a case where the second memory cell has been programmed using the second voltage.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Riki Suzuki, Masanobu Shirakawa, Yoshihisa Kojima, Marie Takada, Tsukasa Tokutomi
  • Publication number: 20200395067
    Abstract: According to an embodiment, a control circuitry performing: a first operation of reading data out of a memory cell with a first voltage applied to a word line while changing the first voltage by a first shift amount within a first range, and a second operation of reading data out of the memory cell with a second voltage applied to the word line while changing the second voltage by a second shift amount within a second range, wherein the second shift amount is smaller than the first shift amount, and wherein the control circuitry performs the second operation to apply the second voltage to the word line subsequently to application of the first voltage to the word line in the first operation.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 17, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Tsukasa TOKUTOMI, Masanobu Shirakawa, Marie Takada