Abstract: The present invention provides a textile printing method for forming a color mixture portion by partially overlapping at least three colors of inks including disperse dyes. In the printing method, the three color inks contain at least four disperse dyes in total.

Abstract: Disclosed herein is an ink-jet textile printing ink comprising a reactive dye and an aqueous liquid medium, wherein the ink contains at least one substance selected from the group consisting of dicarboxylic acids and alkali metal salts thereof.

Abstract: A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x)<d.sub.2 <3.6.times.10.sup.-3 .times.logN/(x+0.02)+0.02wherein when N.sub.Mg >N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.

Abstract: A textile-printing method imparts ink containing a cyan disperse dye and ink containing blue disperse dye on a cloth such that the cyan ink and the blue ink are at least partially overlapped, thereby forming a color mixture portion on the cloth, wherein a weight ratio of the cyan dye to the blue dye at the overlapped portion is specified in the range of from 10:1 to 100:1.

Abstract: Disclosed herein is an ink-jet ink comprising a recording agent and a liquid medium dissolving and/or dispersing the recording agent therein, wherein the ink contains phytic acid and/or a salt thereof.

Abstract: An ink-jet printing cloth is disclosed in which a selected type of polyethylene oxide is incorporated in specified amounts. The polyethylene oxide has a larger viscosity average molecular weight of from 100,000 to 3,000,000 and acts to pretreat a starting cloth material so as to be adequate for ink-jet printing. The ink-jet printing cloth is highly capable of providing images of great color depth with sufficient brightness and sharpness but freedom from an objectionable bleeding. Also disclosed are a textile printing method using that printing cloth and a print resulting from this method.

Abstract: Disclosed herein is an ink for ink-jet printing comprising a disperse dye in an amount of from 0.1 to 15% by weight, a compound that disperses said disperse dye, a water-soluble organic solvent, bishydroxyethylsulfone and water, wherein said disperse dye has an average particle diameter in a range of from 150 to 400 nm, and dye particles having a particle diameter of not more than 200 nm occupy 85% by weight in a particle diameter distribution, and dye particles having a particle diameter of not less than 1,000 nm are substantially not contained.

Abstract: Disclosed herein is an ink-jet printing cloth which can be dyed with inks containing a reactive dye and is composed mainly of cellulose fiber, wherein the cloth contains 0.1 to 50% by weight of a cationic substance, 0.01 to 5% by weight of an alkaline substance and 0.01 to 20% by weight of the ammonium salt of a polyvalent acid, the proportions of said cationic and alkaline substances and said ammonium salt being based on the dry weight of the cloth.

Abstract: The invention provides a water-based dispersion ink for bubble jet system which contains at least water, a water-soluble organic solvent, a disperse dye or pigment, a surfactant, and/or an alkali-soluble, water-soluble polymer having a carboxylic acid value, wherein the surfactant is a polyoxyethylene alkyl ether or a polyoxyethylene alkylphenyl ether having an anionic group, selected from phosphoric acid and carboxylic acid, at the ethylene oxide terminal and also having HLB equal to or more than 10.

Abstract: Disclosed herein is a printing process in which at least three inks are applied to a cloth according to an ink-jet system to conduct printing, which comprises at least three steps of:(a) applying at least two of the inks to the cloth in such a manner that at least parts of the two inks overlap each other;(b) subjecting the cloth, to which the inks have been applied, to a heat treatment; and(c) washing the heat-treated cloth,wherein the cloth is a cloth comprising fibers dyeable with disperse dyes, each and of the inks comprises a specified coloring matter, a compound for dispersing the coloring matter and an aqueous liquid medium.

Abstract: An ink jet printing method includes supplying at least two types of inks on a cloth such that the two types of inks overlap, wherein the cloth contains fibers which can be dyed with disperse dye, the two types of inks at least contain pigments, a compound for dispersing the pigments and an aqueous liquid medium, and the pigments are selected from a specific group of pigments.

Abstract: Disclosed herein is an ink-jet textile printing ink comprising at least a reactive dye and water, wherein the ink contains a hydrolyzate of the reactive dye in an amount of 1% to 50% by weight based on the weight of the reactive dye.

Abstract: An ink-jet textile printing ink comprises 5 to 30% by weight of a reactive dye having a vinylsulfone group and/or a monochlorotriazine group and an aqueous liquid medium, wherein the liquid medium contains at least 10 to 2000 ppm of phosphate ion (PO.sub.4.sup.3-).

Abstract: Disclosed herein is an ink comprising a coloring material and a liquid medium dissolving or dispersing the coloring material therein, wherein the ink comprises a compound represented by the general formula ##STR1## wherein R denotes H or CH.sub.3, n is an integer of 1 to 3, m is an integer of 1 to 3, and n+m is within a range of from 1 to 4, or bis(2-hydroxyethyl)sulfone.

Abstract: An ink jet printing method for effecting printing on a print medium such as a sheet of cloth by applying a jet of an ink to the print medium. The print medium is formed by preparing a sheet of cloth containing a cationic substance, preparing a backing sheet having a layer of an adhesive agent, and bonding the sheet of cloth to the adhesive surface of the backing sheet. After the jet of ink is applied to the print medium, the sheet of cloth is peeled off from the backing sheet and the freed sheet of cloth is rinsed with rinsing water containing a cation blocking agent, followed by drying.

Abstract: Disclosed herein is an ink-jet printing process comprising at least the steps of:(a) successively applying, as ink droplets, at least two inks of different colors to a cloth to form a color-mixed portion;(b) subjecting the cloth to a heat treatment to fix dyes contained in the inks to the cloth; and(c) washing the cloth to remove unfixed dyes from the cloth,wherein the inks comprise water, an organic solvent and individual reactive dyes different from each other in reaction rate, and the volume of a droplet of the ink containing a slower-reacting dye is made smaller upon the application of the inks.

Abstract: A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.

Abstract: An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

Abstract: Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

Abstract: A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In.sub.1-w (Ga.sub.1-y Al.sub.y)wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In.sub.1-w (Ga.sub.1-w Al.sub.z).sub.w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In.sub.1-w (Ga.sub.1-s Al.sub.s).sub.w P (0<s<z.ltoreq.1) of the second conductivity type formed on the second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on the first upper clad layer and the first contact layer. The value of y in In.sub.1-w (Ga.sub.1-y Al.sub.y).sub.w P which constitutes the first upper cladding layer, and the value of z in In.sub.1-w (Ga.sub.1-z Al.sub.z).sub.