Patents by Inventor Marinus J. Hopstaken
Marinus J. Hopstaken has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9917220Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.Type: GrantFiled: March 22, 2016Date of Patent: March 13, 2018Assignee: International Business Machines CorporationInventors: Augustin J. Hong, Marinus J. Hopstaken, Jeehwan Kim, John A. Ott, Devendra K. Sadana
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Publication number: 20160204290Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.Type: ApplicationFiled: March 22, 2016Publication date: July 14, 2016Inventors: AUGUSTIN J. HONG, MARINUS J. HOPSTAKEN, JEEHWAN KIM, JOHN A. OTT, DEVENDRA K. SADANA
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Patent number: 9306107Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.Type: GrantFiled: August 14, 2013Date of Patent: April 5, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Augustin J. Hong, Marinus J. Hopstaken, Jeehwan Kim, John A. Ott, Devendra K. Sadana
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Patent number: 9203022Abstract: A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.Type: GrantFiled: July 23, 2013Date of Patent: December 1, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Marinus J. Hopstaken, Jeehwan Kim, Seyoung Kim, Mark B. Ritter
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Patent number: 9184322Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.Type: GrantFiled: August 29, 2013Date of Patent: November 10, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Marinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
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Publication number: 20150243888Abstract: A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.Type: ApplicationFiled: May 12, 2015Publication date: August 27, 2015Inventors: Marinus J. Hopstaken, Jeehwan Kim, Seyoung Kim, Mark B. Ritter
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Publication number: 20150059855Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.Type: ApplicationFiled: August 29, 2013Publication date: March 5, 2015Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
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Publication number: 20150059856Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.Type: ApplicationFiled: September 25, 2013Publication date: March 5, 2015Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
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Publication number: 20150028279Abstract: A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.Type: ApplicationFiled: July 23, 2013Publication date: January 29, 2015Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marinus J. Hopstaken, Jeehwan Kim, Seyoung Kim, Mark B. Ritter
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Publication number: 20140216534Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.Type: ApplicationFiled: August 14, 2013Publication date: August 7, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: AUGUSTIN J. HONG, MARINUS J. HOPSTAKEN, JEEHWAN KIM, JOHN A. OTT, DEVENDRA K. SADANA
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Publication number: 20140217408Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.Type: ApplicationFiled: February 6, 2013Publication date: August 7, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATONInventors: Augustin J. Hong, Marinus J. Hopstaken, Jeehwan Kim, John A. Ott, Devendra K. Sadana
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Publication number: 20140127852Abstract: A device and method for forming a photovoltaic device include forming a photovoltaic stack of layers on a transparent substrate wherein at least one layer of the photovoltaic stack of layers includes a microcrystalline layer. The microcrystalline layer is formed by purging a vacuum chamber with a gettering gas to remove contaminant species from the chamber prior to forming the microcrystalline layer. The microcrystalline layer is deposited at a vacuum base pressure of greater than about 10?2 Torr.Type: ApplicationFiled: November 7, 2012Publication date: May 8, 2014Applicant: International Business Machines CorporationInventors: Joel P. de Souza, Marinus J. Hopstaken, Jeehwan Kim, Devendra K. Sadana
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Patent number: 8628999Abstract: Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.Type: GrantFiled: February 28, 2012Date of Patent: January 14, 2014Assignees: International Business Machines Corporation, Bay Zu Precision Co., Ltd.Inventors: Augustin J. Hong, Marinus J. Hopstaken, Chien-Chih Huang, Yu-Wei Huang, Jeehwan Kim, Devendra K. Sadana, Chih-Fu Tseng
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Publication number: 20130224900Abstract: Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.Type: ApplicationFiled: February 28, 2012Publication date: August 29, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Augustin J. Hong, Marinus J. Hopstaken, Chien-Chih Huang, Yu-Wei Huang, Jeehwan Kim, Devendra K. Sadana, Chih-Fu Tseng