Patents by Inventor Mario Ancona

Mario Ancona has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130149845
    Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
    Type: Application
    Filed: February 1, 2013
    Publication date: June 13, 2013
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Mario Ancona, James G. Champlain, Nicolas A. Papanicolaou
  • Patent number: 8461664
    Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: June 11, 2013
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Mario Ancona, James G. Champlain, Nicolas A Papanicolaou
  • Patent number: 8076700
    Abstract: This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: December 13, 2011
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Richard Magno, Mario Ancona, John Bradley Boos, James G Champlain, Harvey S Newman
  • Publication number: 20110297916
    Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
    Type: Application
    Filed: May 25, 2011
    Publication date: December 8, 2011
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Mario Ancona, James G. Champlain, Nicolas A. Papanicolaou
  • Patent number: 7932096
    Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: April 26, 2011
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Sulay Jhaveri, Mario Ancona, Edward E Foos, Eddie L Chang
  • Publication number: 20100029921
    Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.
    Type: Application
    Filed: October 6, 2009
    Publication date: February 4, 2010
    Applicant: The Government of the US, as represented by the Secretary of the Navy
    Inventors: Sulay Jhaveri, Mario Ancona, Edward E. Foos, Eddie L. Chang
  • Patent number: 7655474
    Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.
    Type: Grant
    Filed: April 3, 2006
    Date of Patent: February 2, 2010
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Sulay Jhaveri, Mario Ancona, Edward E Foos, Eddie L Chang
  • Publication number: 20090302352
    Abstract: This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.
    Type: Application
    Filed: June 2, 2009
    Publication date: December 10, 2009
    Applicant: The Government of the United States of America, as represenied by the Secretary of the Navy
    Inventors: Richard Magno, Mario Ancona, John Bradley Boos, James G. Champlain, Harvey S. Newman
  • Publication number: 20090269853
    Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.
    Type: Application
    Filed: April 3, 2006
    Publication date: October 29, 2009
    Applicant: The Government of the US, as represented by the Secretarty of the Navy
    Inventors: Sulay Jhaveri, Mario Ancona, Edward E. Foos, Eddie L. Chang
  • Publication number: 20040029288
    Abstract: The present invention is a chemiresistor for qualitative and quantitative analysis of chemical species that consists of a very thin film of particles, nanoclusters, deposited on an insulating substrate and contacted by electrodes. The particles have a metallic core, preferably spheroidal, that is less than 5 nm in diameter and surrounded by an monolayer ligand shell ranging in thickness from 0.4 nm to 2 nm. The Coulomb blockade effects upon which the invention operates result in nonlinear current-voltage characteristics which dramatically improves sensitivity with much lower power dissipation. One property of the ligand shell is that its chemical composition can be chosen to be especially receptive to a particular chemical vapor.
    Type: Application
    Filed: August 9, 2002
    Publication date: February 12, 2004
    Inventors: Arthur Snow, Mario Ancona, Edward Foos
  • Patent number: 4978928
    Abstract: A Gunn oscillator having a plurality of Gunn elements connected in parallel etween a common anode and a common cathode. In one embodiment, the elements are separated by barrier layers that capacitively couple domain fields into adjacent elements thereby sequentially triggering them. There is a time delay between the domain formation in one element and the domain formation in the next. Another embodiment has elements of differing lengths to establish differing threshold voltages for triggering domains in each element. Sequentially triggering domain formation, e.g., by a simple sawtooth voltage, creates domains within each element. Again, there is a time delay between the domain formations in the elements. In either embodiment, collection of the domains at the common anode results in multiplication of the oscillator's base frequency.
    Type: Grant
    Filed: March 30, 1990
    Date of Patent: December 18, 1990
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Mario Ancona