Abstract: A molecular concentrator comprising a thermal ratchet for driving molecules from one place to another. A plurality of conducting wires are arranged on or suspended above a substrate. Each of the wires is configured to strongly sorb a vapor of interest when the wire is at room temperature and to rapidly desorb the vapor when the wire is at an elevated temperature. By selectively heating and cooling the wires, vapor molecules incident on the wires can be directed in a desired manner, e.g., from the wires closest to the vapor-containing environment to a sensor.

Abstract: Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.

Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.

Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.

Abstract: This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

Abstract: A method of making a nanoclusters functionalized with a single DNA strand comprising the steps of providing nanoclusters, combining said nanoclusters with thiolated DNA, incubating said nanoclusters and thiolated DNA mixture, combining said mixture with a solution comprising ethanol and dichloromethane; separating said mixture into an aqueous phase and an organic phase, mixing said aqueous phase with a solution comprising dicholormethane and NaCl, and separating the mixture into an aqueous phase and an organic phase; wherein said organic phase comprises said nanoclusters functionalized with a single DNA strand. Further, provided is a nanocluster functionalized with a single DNA strand comprising a nanocluster, said nanocluster being functionalized with a single DNA strand, said DNA strand having a length of about 10 to about 50 bases.

Abstract: The present invention is a chemiresistor for qualitative and quantitative analysis of chemical species that consists of a very thin film of particles, nanoclusters, deposited on an insulating substrate and contacted by electrodes. The particles have a metallic core, preferably spheroidal, that is less than 5 nm in diameter and surrounded by an monolayer ligand shell ranging in thickness from 0.4 nm to 2 nm. The Coulomb blockade effects upon which the invention operates result in nonlinear current-voltage characteristics which dramatically improves sensitivity with much lower power dissipation. One property of the ligand shell is that its chemical composition can be chosen to be especially receptive to a particular chemical vapor.

Abstract: A Gunn oscillator having a plurality of Gunn elements connected in parallel etween a common anode and a common cathode. In one embodiment, the elements are separated by barrier layers that capacitively couple domain fields into adjacent elements thereby sequentially triggering them. There is a time delay between the domain formation in one element and the domain formation in the next. Another embodiment has elements of differing lengths to establish differing threshold voltages for triggering domains in each element. Sequentially triggering domain formation, e.g., by a simple sawtooth voltage, creates domains within each element. Again, there is a time delay between the domain formations in the elements. In either embodiment, collection of the domains at the common anode results in multiplication of the oscillator's base frequency.