Abstract: A semiconductor device includes a first integrated circuit chip, a second integrated circuit chip, a coupled inductor system, and a semiconductor package. The first integrated circuit chip is connected to a substrate and configured to process digital data. The second integrated circuit chip is configured to manage power for the first integrated circuit chip. The coupled inductor system is embedded in the substrate, connected to the second integrated circuit chip, and has a first inductor configured to be magnetically coupled to a second inductor. The semiconductor package is configured to encapsulate the first integrated circuit chip and the second integrated circuit chip.

Abstract: A device includes a stress relief region between at least two stress domains of a substrate (e.g., of a semiconductor die or other integrated circuit). The stress relief region includes a conductive structure electrically coupling circuitries of the stress domains between which the conductive structure is disposed.

Abstract: An apparatus includes a varactor having a first contact that is located on a first side of a substrate. The varactor includes a second contact that is located on a second side of the substrate, and the second side is opposite the first side. The apparatus further includes a signal path between the first contact and the second contact.

Abstract: A three-dimensional (3D) orthogonal inductor pair is embedded in and supported by a substrate, and has a first inductor having a first coil that winds around a first winding axis and a second inductor having a second coil that winds around a second winding axis. The second winding axis is orthogonal to the first winding axis. The second winding axis intersects the first winding axis at an intersection point that is within the substrate.

Abstract: Electromechanical systems dilation mode resonator (DMR) structures are disclosed. The DMR includes a first electrode layer, a second electrode layer, and a piezoelectric layer formed of a piezoelectric material. The piezoelectric layer has dimensions including a lateral distance (D), in a plane of an X axis and a Y axis perpendicular to the X axis, and a thickness (T), along a Z axis perpendicular to the X axis and the Y axis. A numerical ratio of the thickness and the lateral distance, T/D, is configured to provide a mode of vibration of the piezoelectric layer with displacement along the Z axis and along the plane of the X axis and the Y axis responsive to a signal provided to one or more of the electrodes. Ladder filter circuits can be constructed with DMRs as series and/or shunt elements, and the resonators can have spiral configurations.

Abstract: Systems for reducing magnetic coupling in integrated circuits (ICs) are disclosed. Related components and methods are also disclosed. The ICs have a plurality of inductors. Each inductor generates a magnetic flux that has a discernible axis. To reduce magnetic coupling between the inductors, the flux axes are designed so as to be non-parallel. In particular, by making the flux axes of the inductors non-parallel to one another, magnetic coupling between the inductors is reduced relative to the situation where the flux axes are parallel. This arrangement may be particularly well suited for use in diplexers having a low pass and a high pass filter.

Abstract: Some features pertain to an integrated device (e.g., package-on-package (PoP) device) that includes a substrate, a first die, a first encapsulation layer, a first redistribution portion, a second die, a second encapsulation layer, and a second redistribution portion. The substrate includes a first surface and a second surface. The substrate includes a capacitor. The first die is coupled to the first surface of the substrate. The first encapsulation layer encapsulates the first die. The first redistribution portion is coupled to the first encapsulation. The second die is coupled to the second surface of the substrate. The second encapsulation layer encapsulates the second die. The second redistribution portion is coupled to the second encapsulation layer.

Abstract: A three-dimensional (3D) orthogonal inductor pair is embedded in and supported by a substrate, and has a first inductor having a first coil that winds around a first winding axis and a second inductor having a second coil that winds around a second winding axis. The second winding axis is orthogonal to the first winding axis. The second winding axis intersects the first winding axis at an intersection point that is within the substrate.

Abstract: A hybrid package having a processor module disposed on a substrate and an auxiliary module disposed on a patterned lid. The auxiliary module may be a memory module, a power management integrated circuit (PMIC) module, and/or other suitable module, that are located in the package along with the processor module. Having the auxiliary module in the package with the processor module reduces the noise at the solder bump between the processor module and the substrate. Having the auxiliary module in the package with the processor module also allows other modules to be added to the package without increasing the area of the package.

Abstract: Methods and apparatuses, wherein the method forms a first plurality of vias in a substrate, further comprising forming the first plurality of vias to be substantially the same height. The method forms a plurality of conductive traces external to the substrate and couples the plurality of conductive traces to the first plurality of vias: wherein the plurality of conductive traces and the first plurality of vias comprise a plurality of conductive turns and wherein the plurality of conductive turns are in a spiral configuration substantially within a first plane.

Abstract: A diplexer includes a substrate having a set of through substrate vias. The diplexer also includes a first set of traces on a first surface of the substrate. The first traces are coupled to the through substrate vias. The diplexer further includes a second set of traces on a second surface of the substrate that is opposite the first surface. The second traces are coupled to opposite ends of the set of through substrate vias. The through substrate vias and the traces also operate as a 3D inductor. The diplexer also includes a capacitor supported by the substrate.

Abstract: Some novel features pertain to an integrated device package (e.g., die package) that includes a package substrate, a die, an encapsulation layer and a first set of metal layers. The package substrate includes a first surface and a second surface. The die is coupled to the first surface of the package substrate. The encapsulation layer encapsulates the die. The first set of metal layers is coupled to a first exterior surface of the encapsulation layer. In some implementations, the first set of metal layers is configured to operate as a die-to-wire connector of the integrated device package. In some implementations, the integrated device package includes a second set of metal layers coupled to the second surface of the package substrate. In some implementations, the integrated device package includes a second set of metal layers coupled to a second exterior surface of the encapsulation layer.

Abstract: A two-stage power delivery network includes a voltage regulator and an interposer. The interposer includes a packaging substrate having an embedded inductor. The embedded inductor includes a set of traces and a set of through substrate vias at opposing ends of the traces. The interposer is coupled to the voltage regulator. The two-stage power delivery network also includes a semiconductor die supported by the packaging substrate. The two-stage power delivery network also includes a capacitor that is supported by the packaging substrate. The capacitor is operable to provide a decoupling capacitance associated with the semiconductor die and a capacitance to reduce a switching noise of the voltage regulator.

Abstract: Some novel features pertain to an integrated device package (e.g., die package) that includes a package substrate, a die, an encapsulation layer and a first set of metal layers. The package substrate includes a first surface and a second surface. The die is coupled to the first surface of the package substrate. The encapsulation layer encapsulates the die. The first set of metal layers is coupled to a first exterior surface of the encapsulation layer. In some implementations, the first set of metal layers is configured to operate as a die-to-wire connector of the integrated device package. In some implementations, the integrated device package includes a second set of metal layers coupled to the second surface of the package substrate. In some implementations, the integrated device package includes a second set of metal layers coupled to a second exterior surface of the encapsulation layer.

Abstract: An apparatus is disclosed that includes a frequency multiplexer circuit coupled to an input node and configured to receive an input signal via the input node. The frequency multiplexer circuit comprises a first filter circuit, a second filter circuit, and a third filter circuit. The apparatus also includes a switching circuit that is configurable to couple at least two of a first output of the first filter circuit, a second output of the second filter circuit, or a third output of the third filter circuit to a single output port.

Abstract: An integrated circuit device includes a substrate. The integrated circuit device also includes a first conductive stack including a back-end-of-line (BEOL) conductive layer at a first elevation with reference to the substrate. The integrated circuit device also includes a second conductive stack including the BEOL conductive layer at a second elevation with reference to the substrate. The second elevation differs from the first elevation.

Abstract: Base pads are spaced by a pitch on a support surface. Conducting members, optionally Cu or other metal pillars, extend up from the base pads to top pads. A top pad interconnector connects the top pads in a configuration establishing an inductor current path between the base pads.

Abstract: Systems and methods relate to a semiconductor package comprising a first substrate or a 2D passive-on-glass (POG) structure with a passive component and a first set of one or more package pads formed on a face of a glass substrate. The semiconductor package also includes a second or laminate substrate with a second set of one or more package pads formed on a face of the second or laminate substrate. Solder balls are dropped, configured to contact the first set of one or more package pads with the second set of one or more package pads, wherein the first substrate or the 2D POG structure is placed face-up on the face of the second or laminate substrate. A printed circuit board (PCB) can be coupled to a bottom side of the second or laminate substrate.

Abstract: This disclosure provides systems, methods and apparatus for a compact 3-D coplanar transmission line (CTL). In one aspect, the CTL has a proximal end and a distal end separated, in a first plane, by a distance D, the first plane being parallel to a layout area of a substrate. The plane is defined by mutually orthogonal axes x and z The CTL provides a conductive path having pathlength L. D is substantially aligned along axis z, L is at least 1.5×D, and the CPW is configured such that at least one third of the pathlength L is disposed along one or more directions having a substantial component orthogonal to the first plane. Less than one third of the pathlength L is disposed in a direction having a substantial component parallel to axis x.

Abstract: An integrated circuit device includes a piezoelectric substrate having a first surface and a second surface opposite the first surface. The device also includes a first electrode and a second electrode on the first surface of the piezoelectric substrate, the first electrode having a first width and the second electrode having a second width. The device further includes a third electrode and a fourth electrode on the second surface of the piezoelectric substrate, the third electrode having a third width that is substantially the same as the second width, and the fourth electrode having a fourth width that is substantially the same as the first width. The first and third electrodes operate as part of a first portion of a microelectromechanical systems (MEMS) resonator, and the second and fourth electrodes operate as part of a second portion of the MEMS resonator.