Abstract: Techniques for handling queuing of memory accesses prevent passing excessive requests that implicate a region of memory subject to a high latency memory operation, such as a memory refresh operation, memory scrubbing or an internal bus calibration event, to a re-order queue of a memory controller. The memory controller includes a queue for storing pending memory access requests, a re-order queue for receiving the requests, and a control logic implementing a queue controller that determines if there is a collision between a received request and an ongoing high-latency memory operation. If there is a collision, then transfer of the request to the re-order queue may be rejected outright, or a count of existing queued operations that collide with the high latency operation may be used to determine if queuing the new request will exceed a threshold number of such operations.

Abstract: A method for controlling memory refresh operations in dynamic random access memories. The method includes determining a count of deferred memory refresh operations for a first memory rank. Responsive to the count approaching a high priority threshold, issuing an early high priority refresh notification for the first memory rank, which indicates the pre-determined time for performing a high priority memory refresh operation at the first memory rank. Responsive to the early high priority refresh notification, the behavior of a read reorder queue is dynamically modified to give priority scheduling to at least one read command targeting the first memory rank, and one or more of the at least one read command is executed on the first memory rank according to the priority scheduling. Priority scheduling removes these commands from the re-order queue before the refresh operation is initiated at the first memory rank.

Abstract: A memory system and data processing system for controlling memory refresh operations in dynamic random access memories. The memory controller comprises logic that: tracks a time remaining before a scheduled time for performing a high priority, high latency operation a first memory rank of the memory system; responsive to the time remaining reaching a pre-established early notification time before the schedule time for performing the high priority, high latency operation, biases the re-order queue containing memory access operations targeting the plurality of ranks to prioritize scheduling of any first memory access operations that target the first memory rank. The logic further: schedules the first memory access operations to the first memory rank for early completion relative to other memory access operations in the re-order queue that target other memory ranks; and performs the high priority, high latency operation at the first memory rank at the scheduled time.

Abstract: A method for controlling memory refresh operations in dynamic random access memories. The method includes determining a count of deferred memory refresh operations for a first memory rank. Responsive to the count approaching a high priority threshold, issuing an early high priority refresh notification for the first memory rank, which indicates the pre-determined time for performing a high priority memory refresh operation at the first memory rank. Responsive to the early high priority refresh notification, the behavior of a read reorder queue is dynamically modified to give priority scheduling to at least one read command targeting the first memory rank, and one or more of the at least one read command is executed on the first memory rank according to the priority scheduling. Priority scheduling removes these commands from the re-order queue before the refresh operation is initiated at the first memory rank.

Abstract: Techniques for handling queuing of memory accesses prevent passing excessive requests that implicate a region of memory subject to a high latency memory operation, such as a memory refresh operation, memory scrubbing or an internal bus calibration event, to a re-order queue of a memory controller. The memory controller includes a queue for storing pending memory access requests, a re-order queue for receiving the requests, and a control logic implementing a queue controller that determines if there is a collision between a received request and an ongoing high-latency memory operation. If there is a collision, then transfer of the request to the re-order queue may be rejected outright, or a count of existing queued operations that collide with the high latency operation may be used to determine if queuing the new request will exceed a threshold number of such operations.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: A memory system and data processing system for controlling memory refresh operations in dynamic random access memories. The memory controller comprises logic that: tracks a time remaining before a scheduled time for performing a high priority, high latency operation a first memory rank of the memory system; responsive to the time remaining reaching a pre-established early notification time before the schedule time for performing the high priority, high latency operation, biases the re-order queue containing memory access operations targeting the plurality of ranks to prioritize scheduling of any first memory access operations that target the first memory rank. The logic further: schedules the first memory access operations to the first memory rank for early completion relative to other memory access operations in the re-order queue that target other memory ranks; and performs the high priority, high latency operation at the first memory rank at the scheduled time.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: Techniques for handling queuing of memory accesses prevent passing excessive requests that implicate a region of memory subject to a high latency memory operation, such as a memory refresh operation, memory scrubbing or an internal bus calibration event, to a re-order queue of a memory controller. The memory controller includes a queue for storing pending memory access requests, a re-order queue for receiving the requests, and a control logic implementing a queue controller that determines if there is a collision between a received request and an ongoing high-latency memory operation. If there is a collision, then transfer of the request to the re-order queue may be rejected outright, or a count of existing queued operations that collide with the high latency operation may be used to determine if queuing the new request will exceed a threshold number of such operations.

Abstract: A memory system is provided that provides memory system power reduction without reducing overall memory system performance. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. Using the asynchronous boundary, the memory channel operates at a maximum designed operating bandwidth while the second operating frequency is independently decreased to reduce power being consumed by the set of memory devices.

Abstract: A memory system is provided that manages thermal conditions at a memory device level transparent to a memory controller. The memory systems comprises a memory hub device integrated in a memory module, a set of memory devices coupled to the memory hub device, and a first set of thermal sensors integrated in the set of memory devices. A thermal management control unit integrated in the memory hub device monitors a temperature of the set of memory devices sensed by the first set of thermal sensors. The memory hub device reduces a memory access rate to the set of memory devices in response to a predetermined thermal threshold being exceeded thereby reducing power used by the set of memory devices which in turn decreases the temperature of the set of memory devices.

Abstract: A memory system is provided that increases the overall bandwidth of a memory channel by operating the memory channel at a independent frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. Using the asynchronous boundary, the memory channel operates at a maximum designed operating bandwidth, which is independent of the second operating frequency.

Abstract: A memory system is provided that reduces latency by running a memory channel fully asynchronous from a memory device frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. The first operating frequency is a maximum designed operating frequency of the memory channel and the first operating frequency is independent of the second operating frequency.

Abstract: A memory system is provided that implements an asynchronous boundary in a memory module. The memory system comprises a memory hub device integrated in a memory module. The memory system also comprises a set of memory devices coupled to the memory hub device. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system further comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented within the memory hub device of the memory module.

Abstract: Systems and methods for determining memory module power requirements in a memory system. Embodiments include a memory system with a physical memory and a memory controller. The physical memory includes a plurality of memory devices. The memory controller is in communication with the physical memory and has a logical memory for storing power usage characteristics associated with the physical memory. The power usage characteristics are generated in response to a current operating environment of the memory system.

Abstract: A memory controller for a processing unit provides a memory wrap test mode path which selectively writes data from the write buffer of the controller to the read buffer of the controller, thereby allowing the write and read buffers to substitute for a system memory device during testing of the processing unit. The processing unit can thus be tested without the attached memory device yet still operate under conditions which generate bus traffic and chip noise similar to that generated under actual (end-use) operation. When a processor issues a write operation in test mode, the controller writes the data to an entry of the read buffer which corresponds to the write address. Thereafter, the processor can issue a read operation with the same address and the read buffer will send the data from the corresponding entry.

Abstract: A memory system is provided that provides memory system power reduction without reducing overall memory system performance. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. Using the asynchronous boundary, the memory channel operates at a maximum designed operating bandwidth while the second operating frequency is independently decreased to reduce power being consumed by the set of memory devices.

Abstract: A memory system is provided that reduces latency by running a memory channel fully asynchronous from a memory device frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. The first operating frequency is a maximum designed operating frequency of the memory channel and the first operating frequency is independent of the second operating frequency.

Abstract: A memory system is provided that manages thermal conditions at a memory device level transparent to a memory controller. The memory systems comprises a memory hub device integrated in a memory module, a set of memory devices coupled to the memory hub device, and a first set of thermal sensors integrated in the set of memory devices. A thermal management control unit integrated in the memory hub device monitors a temperature of the set of memory devices sensed by the first set of thermal sensors. The memory hub device reduces a memory access rate to the set of memory devices in response to a predetermined thermal threshold being exceeded thereby reducing power used by the set of memory devices which in turn decreases the temperature of the set of memory devices.