Abstract: A memory system is provided that increases the overall bandwidth of a memory channel by operating the memory channel at a independent frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. Using the asynchronous boundary, the memory channel operates at a maximum designed operating bandwidth, which is independent of the second operating frequency.

Abstract: A memory system is provided that implements an asynchronous boundary in a memory module. The memory system comprises a memory hub device integrated in a memory module. The memory system also comprises a set of memory devices coupled to the memory hub device. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system further comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented within the memory hub device of the memory module.

Abstract: A memory controller for a processing unit provides a memory wrap test mode path which selectively writes data from the write buffer of the controller to the read buffer of the controller, thereby allowing the write and read buffers to substitute for a system memory device during testing of the processing unit. The processing unit can thus be tested without the attached memory device yet still operate under conditions which generate bus traffic and chip noise similar to that generated under actual (end-use) operation. When a processor issues a write operation in test mode, the controller writes the data to an entry of the read buffer which corresponds to the write address. Thereafter, the processor can issue a read operation with the same address and the read buffer will send the data from the corresponding entry.

Abstract: A memory subsystem completes multiple read operations in parallel, utilizing the functionality of buffered memory modules in a daisy chain topology. A variable read latency is provided with each read command to enable memory modules to run independently in the memory subsystem. Busy periods of the memory device architecture are hidden by allowing data buses on multiple memory modules attached to the same data channel to run in parallel rather than in series and by issuing reads earlier than required to enable the memory devices to return from a busy state earlier. During scheduling of reads, the earliest received read whose target memory module is not busy is immediately issued at a next command cycle. The memory controller provides a delay parameter with each issued read. The number of cycles of delay is calculated to allow maximum utilization of the memory modules' data bus bandwidth without causing collisions on the memory channel.

Abstract: Memory modules are designed with multiple write buffers utilized to temporarily hold write data. “Write-to-buffer” operations moves write data from the memory controller to the write buffers while the memory module is busy processing read operations. Then, address-only “write” commands are later issued to write the buffered write data to the memory device. The write commands targeting idle DIMMs are issued in sequence ahead of writes targeting busy DIMMs (or soon to be busy). Moving the data via a background write-to-buffer operation increases the efficiency of the common write data channel and allows the write data bus to reach maximum bandwidth during periods of heavy read activity. The actual write operations, deferred to periods of when the negative affects of the write can be completely/mostly hidden. In periods of light read activity or when there are no reads pending, buffering data in the memory module enables the buffered data to be written in parallel across multiple memory modules simultaneously.

Abstract: Systems and methods for determining memory module power requirements in a memory system. Embodiments include a memory system with a physical memory and a memory controller. The physical memory includes a plurality of memory devices. The memory controller is in communication with the physical memory and has a logical memory for storing power usage characteristics associated with the physical memory. The power usage characteristics are generated in response to a current operating environment of the memory system.

Abstract: Multiple write buffers are provided within each memory module and are utilized to buffer multiple received write data forwarded to the chip via a write-to-buffer data operation. When a write is received at the memory controller, the memory controller first issues the write-to-buffer (data) operation and the data is forwarded to one of the write buffers. Multiple writes targeting the same DIMM are thus buffered. When all of the available buffers at a memory module are full, the memory controller issues the set of address only write commands to the memory module. The control logic of the DIMM streams all of the buffered write data to the memory device(s) in one continuous burst. By buffering multiple writes and then writing all buffered write data within the DIMM in a single burst, the write-to-read turnaround penalty of the memory module's data bus is substantially minimized.

Abstract: Memory modules are designed with multiple write buffers utilized to temporarily hold write data. “Write-to-buffer” operations moves write data from the memory controller to the write buffers while the memory module is busy processing read operations. Then, address-only “write” commands are later issued to write the buffered write data to the memory device. The write commands targeting idle DIMMs are issued in sequence ahead of writes targeting busy DIMMs (or soon to be busy). Moving the data via a background write-to-buffer operation increases the efficiency of the common write data channel and allows the write data bus to reach maximum bandwidth during periods of heavy read activity. The actual write operations, deferred to periods of when the negative affects of the write can be completely/mostly hidden. In periods of light read activity or when there are no reads pending, buffering data in the memory module enables the buffered data to be written in parallel across multiple memory modules simultaneously.

Abstract: A set of N copies of bank control logic are provided for tracking the banks within the memory modules (DRAMS). When the total number of banks within the memory module(s) is greater than N, the addresses of particular banks are folded into a single grouping. The banks are represented by the N copies of the bank control logic even when the total number of banks is greater than N. Each bank within the group is tagged as being busy when any one of the banks in the group is the target of a memory access request. The algorithm folds the addresses of the banks in an order that substantially minimizes the likelihood that a bank that is in a busy or false busy state will be the target of another memory access request. Power and logic savings are recognized as only N copies of bank control logic have to be supported.

Abstract: A memory subsystem completes multiple read operations in parallel, utilizing the functionality of buffered memory modules in a daisy chain topology. A variable read latency is provided with each read command to enable memory modules to run independently in the memory subsystem. Busy periods of the memory device architecture are hidden by allowing data buses on multiple memory modules attached to the same data channel to run in parallel rather than in series and by issuing reads earlier than required to enable the memory devices to return from a busy state earlier. During scheduling of reads, the earliest received read whose target memory module is not busy is immediately issued at a next command cycle. The memory controller provides a delay parameter with each issued read. The number of cycles of delay is calculated to allow maximum utilization of the memory modules' data bus bandwidth without causing collisions on the memory channel.

Abstract: A method and system for enabling directed temperature/power management at the DIMM-level and/or DRAM-level utilizing intelligent scheduling of memory access operations received at the memory controller. Hot spots within the memory subsystem, caused by operating the DIMMs/DRAMs above predetermined/preset threshold power/temperature values for operating a DIMM and/or a DRAM, are avoided/controlled by logic within the memory controller. The memory controller logic throttles the number/frequency at which commands (read/write operations) are issued to the specific DIMM/DRAM based on stored parameter values and tracking of outstanding operations issued to the memory subsystem devices.

Abstract: A method and system is presented for correcting a data error in a primary Dynamic Random Access Memory (DRAM) in a Dual In-line Memory Module (DIMM). Each DRAM has a left half (for storing bits 0:3) and a right half (for storing bits 4:7). A determination is made as to whether the data error was in the left or right half of the primary DRAM. The half of the primary DRAM in which the error occurred is removed from service. All subsequent reads and writes for data originally stored in the primary DRAM's defective half are made to a half of a spare DRAM in the DIMM, while the DRAM's non-defective half continues to be used for subsequently storing data.

Abstract: A method and system for enabling directed temperature/power management at the DIMM-level and/or DRAM-level utilizing intelligent scheduling of memory access operations received at the memory controller. Hot spots within the memory subsystem, caused by operating the DIMMs/DRAMs above predetermined/preset threshold power/temperature values for operating a DIMM and/or a DRAM, are avoided/controlled by logic within the memory controller. The memory controller logic throttles the number/frequency at which commands (read/write operations) are issued to the specific DIMM/DRAM based on feedback data received from the specific DIMM/DRAM reaching the preset threshold power usage value.

Abstract: A method for identifying and modifying, in a VLSI chip design, wire routes within a region of wiring congestion that can be routed around that region without inducing timing violations by the insertion and proper placement of inverters. Circuits and nets are examined in the vicinity of the wiring congestion to determine those nets with high potential to drive a route outside the region. Circuit locations are analyzed to determine if the net connecting them creates a path through the region of wiring congestion. Timing slacks are derived from the timing reports for such nets and compared against a timing value representing the additional delay of using an inverter pair to drive the wire route outside the region of wiring congestion. If a net has sufficient timing slack, it is buffered with an inverter pair which is then placed in a manner as to force the wire routes for the modified path around the region of wiring congestion, thereby reducing the wire utilization within the region.

Abstract: A method for identifying and modifying, in a VLSI chip design, wire routes within a region of wiring congestion that can be routed around that region without inducing timing violations by the insertion and proper placement of inverters. Circuits and nets are examined in the vicinity of the wiring congestion to determine those nets with high potential to drive a route outside the region. Circuit locations are analyzed to determine if the net connecting them creates a path through the region of wiring congestion. Timing slacks are derived from the timing reports for such nets and compared against a timing value representing the additional delay of using an inverter pair to drive the wire route outside the region of wiring congestion. If a net has sufficient timing slack, it is buffered with an inverter pair which is then placed in a manner as to force the wire routes for the modified path around the region of wiring congestion, thereby reducing the wire utilization within the region.