Abstract: A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain region in the substrate, depositing a dummy gate in each of the plurality of gate trenches, filling the plurality of gate trenches with an oxide layer, removing each dummy gate and depositing a high-K dielectric in the plurality of gate trenches, depositing a metal gate on the high-K dielectric in each of the plurality of gate trenches, depositing a second oxide layer on the metal gate and forming a contact on the source/drain.

Abstract: Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided.

Abstract: A method and apparatus for profiling and identifying the source of a signal is provided. A first method includes receiving a signal produced by a known source and creating a matrix of wavelet coefficients corresponding to a wavelet transform of the signal. The method also includes profiling the signal according to an output of a wavelet transform utilizing a particular base function and a particular scale set. A second method includes performing a wavelet transform having a particular profile on a received signal and determining the presence of a particular signal-producing entity as a function of wavelet coefficients exceeding a threshold. An apparatus includes a receiver configured to receive a signal and a processor coupled to the receiver, such that the processor is configured to perform wavelet transforms on the signals. A database is coupled to the processor and configured to store wavelet transform profiles.

Abstract: The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.

Abstract: A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain region in the substrate, depositing a dummy gate in each of the plurality of gate trenches, filling the plurality of gate trenches with an oxide layer, removing each dummy gate and depositing a high-K dielectric in the plurality of gate trenches, depositing a metal gate on the high-K dielectric in each of the plurality of gate trenches, depositing a second oxide layer on the metal gate and forming a contact on the source/drain.

Abstract: A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for selecting a synchronous or asynchronous process to determine a forecast. These mechanisms and methods for such synchronous/asynchronous process selection can enable embodiments to determine forecasts for multiple users (e.g. with hierarchical relationships, etc.) over an arbitrary time interval. The ability of embodiments to provide forecasts that involve such a large amount of data in an effective way can enable forecasting that was otherwise infeasible due to resource limitations.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for selecting a synchronous or asynchronous process to determine a forecast. These mechanisms and methods for such synchronous/asynchronous process selection can enable embodiments to determine forecasts for multiple users (e.g. with hierarchical relationships, etc.) over an arbitrary time interval. The ability of embodiments to provide forecasts that involve such a large amount of data in an effective way can enable forecasting that was otherwise infeasible due to resource limitations.

Abstract: Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided. Methods and products for detection of oncofetal fibronectin for selection of concepti are provided.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for selecting a synchronous or asynchronous process to determine a forecast. These mechanisms and methods for such synchronous/asynchronous process selection can enable embodiments to determine forecasts for multiple users (e.g. with hierarchical relationships, etc.) over an arbitrary time interval. The ability of embodiments to provide forecasts that involve such a large amount of data in an effective way can enable forecasting that was otherwise infeasible due to resource limitations.

Abstract: The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.

Abstract: A hole in a metal workpiece is filled by friction plug welding. The weld between the workpiece and the plug is reinforced by a weld land in the workpiece that surrounds one end of the plug. The weld land is formed by extruding a portion of the plug into a cavity in an anvil used in the welding process.

Abstract: The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for versioning content in a database system using content type specific objects. These mechanisms and methods for versioning content in a database system using content type specific objects can enable embodiments to provide a database system which stores information associated with multiple versions of content. The ability of embodiments to provide a database system which supports content versioning can enable an efficient and comprehensive storage of content types having different features by the database system.

Abstract: Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for versioning content in a database system using content type specific objects. These mechanisms and methods for versioning content in a database system using content type specific objects can enable embodiments to provide a database system which stores information associated with multiple versions of content. The ability of embodiments to provide a database system which supports content versioning can enable an efficient and comprehensive storage of content types having different features by the database system.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for managing multiple business hours in anon-demand service. These mechanisms and methods for managing multiple business hours in an on-demand service can enable embodiments to provide access to a stored set of business hours for a user to track, at a user level. The ability of embodiments to provide this access may allow users of such on-demand services better insight as to how much time their agents are spending on cases.

Abstract: A system and method for identifying bugs in a database system. In one embodiment, a method includes running a plurality of tests on a software application, and rerunning one or more tests of the plurality of tests. The method also includes identifying one or more bugs in the one or more tests based on inconsistent test results.

Abstract: Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. A photoresist layer is patterned to simultaneously define mask elements in the array, interface and periphery areas. The pattern is transferred to an amorphous carbon layer. Spacers are formed on the sidewalls of the patterned amorphous carbon layer. Protective material is deposited and patterned to expose mask elements in the array region and in parts of the interface or periphery areas. Exposed amorphous carbon is removed, leaving free-standing spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which the substrate is etched.

Abstract: In accordance with embodiments, there are provided mechanisms and methods for generating a custom report using an on-demand database service. These mechanisms and methods for generating an on-demand database service custom report can enable embodiments to generate reports that reflect a relationship between at least two different objects. The ability of embodiments to provide such additional insight into database contents may lead to more efficient and effective reporting.