Abstract: A method for fabricating improved integrated circuit devices. The method enables selective hardening of gate oxide layers and includes providing a semiconductor substrate having a gate oxide layer formed thereover. A resist is then formed over the gate oxide layer and patterned to expose one or more areas of the gate oxide layer which are to be hardened. The exposed portions of the gate oxide layer are then hardened using a true remote plasma nitridation (RPN) scheme or a high-density plasma (HDP) RPN scheme. Because the RPN scheme used in the method of the present invention runs at low temperature, the patterned resist remains stable through the RPN process, and those areas of gate oxide layer which are exposed by the patterned resist are selectively hardened by the RPN treatment, while those areas covered by the patterned resist remain unaffected.

Abstract: The invention includes methods of forming electrically conductive material between line constructions associated with a peripheral region or a pitch region of a semiconductor substrate. The electrically conductive material can be incorporated into an electrically-grounded shield, and/or can be configured to create a magnetic field bias. Also, the conductive material can have electrically isolated segments that are utilized as electrical jumpers for connecting circuit elements. The invention also includes semiconductor constructions comprising the electrically conductive material between line constructions associated with one or both of the pitch region and the peripheral region.

Abstract: A method and system for directly measuring the compression of a ripple spring (23) in a dynamoelectric machine through a corresponding wedge (27). A compression-assessment tool (3) is provided that includes a carriage (32) for supporting a proximity sensor (34). The carriage (32) enables the proximity sensor (34) to be passed over the length of the ripple spring (23), which produces an output signal that is representative of the compression of the ripple spring (23).

Abstract: A method and a system for determining an AC input voltage in an output side of an isolated switching power supply are disclosed. The invention detects a peak-to-peak voltage in the output side of the power supply at a point in a circuit topology of the output side where the peak-to-peak voltage correlates to the AC input voltage. The AC input voltage is determined from the detected peak-to-peak voltage.

Abstract: In one aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a silicon nitride layer over and against a floating gate; and b) forming a control gate over the silicon nitride layer. In another aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a floating gate layer over a substrate; b) forming a silicon nitride layer over the floating gate layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion; and c) forming a control gate over the silicon nitride layer.

Abstract: The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.

Abstract: The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.

Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: The present invention relates to a system and a process for providing improved operational safety for aircraft. The system/process of the instant invention utilizes real-time, two-way transmission of voice and/or text and flight-critical data between an aircraft and a ground-based computer workstation, where transmitted information monitored and acted upon as necessary by a qualified flight safety person, e.g., a appropriately trained individual (including but not limited to a safety pilot or other person trained in safety procedures). This safety person can perform a number of functions that would enhance flight safety, such as reducing the workload of the primary pilot(s), assisting in the performance of routine checklists, monitoring communications with air traffic control, and advising the pilot in the aircraft on how to handle any in-flight situations that may arise.

Abstract: Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided. Methods and products for detection of oncofetal fibronection for selection of concepti are provided.

Abstract: Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided. Methods and products for detection of oncofetal fibronection for selection of concepti are provided.

Abstract: Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided. Methods and products for detection of oncofetal fibronection for selection of concepti are provided.

Abstract: Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided. Methods and products for detection of oncofetal fibronection for selection of concepti are provided.

Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.

Abstract: A pump having top and bottom pieces coupled together by a coupling device features a circumferential clamp that is a lightweight plastic clamp having clamping members, each with one or more strengthening members oriented along a longitudinal axis defined in relation to the top and bottom pieces. The clamping members may include two semi-circular clamping members, each with circumferentially spaced strengthening rib members oriented along the longitudinal axis of the pump housing.

Abstract: The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.

Abstract: The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.

Abstract: The present invention includes a method for preventing distortion in semi-conductor fabrication. The method comprises providing a substrate comprising a film comprising silicon nitride. The substrate is treated in a vacuum of about 3.0-6.5 Torr in an atmosphere comprising oxygen plasma wherein the oxygen plasma flow rate is at least about 300 sccm oxygen. A resist is applied to the treated substrate and the resist is patterned over the treated substrate.