Abstract: A filtration system includes a vessel for housing at least two filtration elements. One or more of the filtration elements is a reverse osmosis membrane or a nanofiltration membrane and one of the other filtration elements is a microfiltration or ultrafiltration membrane. The vessel has an inlet port for providing a liquid feed to the filtration elements, an outlet port for directing a permeate produced by the elements from the vessel and an outlet port for directing a concentrate produced by the elements from the vessel. A number of vessels can be provided in a parallel arrangement and/or a series arrangement and the vessels can be arranged so as to allow regeneration of the microfiltration or ultrationfiltration membranes from another vessel in the arrangement.

Abstract: Techniques for separately accounting for multiple transactions in the same data packets communicated over a network using Transport Control Protocol (TCP) include receiving an Internet Protocol (IP) data packet that includes Transport Control Protocol (TCP) payload data. The TCP payload is parsed to determine boundary data that indicates a byte location on a boundary between a first transaction and a second transaction. A byte count that indicates a number of bytes in the TCP payload associated with the first transaction is determined based on the boundary data. Accounting data for the first transaction is determined based at least in part on the byte count. These techniques allow a service gateway to bill separately for different requests and responses carried in TCP data packets, such as those for Hypertext Transfer Protocol (HTTP) and Real Time Streaming Protocol (RTSP).

Abstract: A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: The present invention relates to compositions and methods for the treatment, prevention, and diagnosis of neuropathies due to PMP22 mis-expression in a subject having Charcot-Marie-Tooth disease, especially Charcot-Marie-Tooth 1A disease. The present invention incorporates the use of small molecule proteasome inhibitors such as, but not limited to, Bortezomib to inhibit or reduce the overexpression of the PMP2 gene.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: An air quality control system (AQCS) useful for processing a gas stream, such as a flue gas stream emitted from a fossil fuel fired boiler, for at least partial removal of acidic and like pollutants therefrom. The air quality control system includes a CDS reactor useful using a reducing agent slurry.

Abstract: A data storage system stores logical data object(s), each identified by a logical identifier. A control is configured to assign a unique WORM (Write Once Read Many) identifier to the logical data object, and stores the unique WORM identifier as associated with the logical identifier, in a database maintained by the control so as to be persistent. Data storage is configured to write the logical data object with a header with the unique WORM identifier. The control, in order to allow the logical data object to be accessed externally to the control, requires matching the unique WORM identifier in the header of a logical data object to the unique WORM identifier of the persistent database for the logical object. The unique WORM identifier is formed of a checksum hash value related to nonce fields comprising at least the logical identifier of the logical data object, and an incrementing token.

Abstract: A wind driven generator may have a first rotating element associated with a first set of vanes distributed so as to be driven by wind in a first rotational direction about an axis of rotation. A second element is associated with a second set of vanes distributed so as to be driven by the wind in a second rotational direction opposite to the first rotational direction concentric with the axis of rotation of the first rotating element. The first rotating element has magnetic elements disposed thereon that project a magnetic field towards and onto the second rotating element. The second rotating element has electromagnetic coils disposed thereon, the electromagnetic coils being exposed to the magnetic field projected from the first rotating element.

Abstract: A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: Techniques for separately accounting for multiple transactions in the same data packets communicated over a network using Transport Control Protocol (TCP) include receiving an Internet Protocol (IP) data packet that includes Transport Control Protocol (TCP) payload data. The TCP payload is parsed to determine boundary data that indicates a byte location on a boundary between a first transaction and a second transaction. A byte count that indicates a number of bytes in the TCP payload associated with the first transaction is determined based on the boundary data. Accounting data for the first transaction is determined based at least in part on the byte count. These techniques allow a service gateway to bill separately for different requests and responses carried in TCP data packets, such as those for Hypertext Transfer Protocol (HTTP) and Real Time Streaming Protocol (RTSP).

Abstract: A medical evaluation system includes an I/O module, a processing module, and an analysis module. The I/O module receives sensory data obtained by a motion sensor disposed in a mobile device carried by a patient at least when the patient is in a non-clinical environment. The processing module extracts medically relevant data from the sensory data received from the sensor in the mobile device. The relevant data includes one or more features of interest in the sensory data. The analysis module derives one or more surrogate biomarkers from the relevant data. The surrogate biomarkers represent at least one of a state or a progression of a medical condition of the patient. The mobile device may be a mobile phone carried by the patient and the sensor may include at least one of an accelerometer or a gyroscope that generates the sensory data to represent movements of the patient.

Abstract: An ignition apparatus includes a core, primary and secondary windings and a loop-shaped magnetic return path structure. The structure includes layers of wound strip steel or wound ferritic wire stacked in an outward fashion. The core is placed in an interior of the loop forming at least one air gap between a core end surfaces and the structure. A combined core and magnetic return path structure includes a continuous loop formed by winding ferritic wire either on a spool or on a mandrel and is then bonded. The bonded winding is cut to form two C-shaped portions. Each C-shaped portion has a central yoke that extends into a pair of parallel legs. The C-shaped portions are re-assembled over primary and second windings so that the legs form a pair of parallel branches. One branch acts as the core and the other branch acts as the magnetic return path.

Abstract: A spark plug coil assembly has a primary core bearing primary windings and a secondary winding spool around which secondary windings are wound and in which the primary core is received. A case receives the spool with core. The entire case can be made of composite Iron to function as a magnetic return path for the core, or a composite Iron shield can be overmolded to an otherwise plastic case.

Abstract: A data storage system stores logical data object(s), each identified by a logical identifier. A control is configured to assign a unique WORM (Write Once Read Many) identifier to the logical data object, and stores the unique WORM identifier as associated with the logical identifier, in a database maintained by the control so as to be persistent. Data storage is configured to write the logical data object with a header with the unique WORM identifier. The control, in order to allow the logical data object to be accessed externally to the control, requires matching the unique WORM identifier in the header of a logical data object to the unique WORM identifier of the persistent database for the logical object. The unique WORM identifier is formed of a checksum hash value related to nonce fields comprising at least the logical identifier of the logical data object, an incrementing token, and a time stamp.

Abstract: Methods, systems, non-transitory media comprising computer-readable instructions, and logic for obtaining information related to an application may include receiving, at a terminal device, data exchange information, including data transfer speed information, that is related to a data exchange between the terminal device and a web service. The method further may include storing, at the terminal device, at least a portion of the data exchange information received at the terminal device.

Abstract: A method is provided for forming narrow-waist nanowire (NW) transistors with wide aspect ratio ends. The method provides a semiconductor-on-insulator wafer. The top semiconductor layer is etched to form a first pad, a second pad, and a plurality of narrow-waist semiconductor bridges. Each semiconductor bridge has two ends, each with a first width, attached to the first and second pads, and a mid-section less than the first width. A channel is formed in a center portion of each mid-section, a drain interposed between the channel and the first end, a source interposed between the channel and the second end, and a gate dielectric surrounding the channel and adjacent portions of the source and drain. A gate electrode is formed surrounding the gate dielectric. The semiconductor bridge ends are etched from the first and second pads, forming a plurality of narrow-waist semiconductor NW transistors.

Abstract: A well-structure anti-punch-through microwire device and associated fabrication method are provided. The method initially forms a microwire with alternating highly and lightly doped cylindrical regions. A channel ring is formed external to the microwire outer shell and surrounding a first dopant well-structure region in the microwire, between source and drain (S/D) regions of the microwire. The S/D regions are doped with a second dopant, opposite to the first dopant. A gate dielectric ring is formed surrounding the channel ring, and a gate electrode ring is formed surrounding the gate dielectric ring. The well-structure, in contrast to conventional micro or nanowire transistors, helps prevent the punch-through phenomena.

Abstract: Embodiments of the present invention are directed to for detecting the presence and concentration of one or more particular target molecules in solutions, air or other gasses, or otherwise present in an environment or sample, by impedance-spectroscopy-based sensors. Various embodiments of the present invention provide for derivatizing target molecules with nanoparticles to increase capacitance changes at electrode surfaces in order to generate stronger signals and improve signal-to-noise ratios of impedance-spectroscopy-based sensors.