Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract: This invention pertains to a method for cleaning an automatic process device. The device is an apparatus for thermally treating a photosensitive element to form a relief surface. One or more contactable surfaces in the device can become contaminated with residue or other materials deposited from the photosensitive element during thermal treating and/or foreign bodies from ambient environment. A cleaning element having an adhesive layer on a support removes or reduces the level of contaminants on the contactable surface. The method includes passing the cleaning element through the device so that the adhesive layer contacts the contactable surfaces and thereby transfers at least one of the contaminants to the adhesive layer.

Abstract: A waste storage device includes a container (21) in which a cassette (1) is mounted. Tubing (2) is pulled through the centre of the cassette (1) to store packages (35) separated by twists. The cassette (1) is rotated relative to the container (21) to provide the twists between packages (35) by virtue of a rotatable disk (100) and user grip portion (102). The package is gripped against rotation by a gripper diaphragm (120) and is guided towards a wall of the container by a guide diaphragm (122) to prevent untwisting between packages.

Abstract: Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

Abstract: A clip on type air freshener device having a housing with openings in walls thereof permitting air flow through a cavity in the housing. A bottle that holds a supply of fragrance bearing liquid is mounted on the housing and has a wick with a portion thereof projecting into the cavity in the housing. An open ended sleeve is mounted on housing in axial alignment with such projecting wick portion and is adjustably moveable axially along the wick selectively in one position to completely cover the wick projecting portion and in another position leave at least a major portion thereof exposed to air flow through said housing openings. The wick cover is exposed through an opening in the housing giving the user a visual indication as to the amount of wick exposed for evaporation of the fragrance during usage of the device.

Abstract: Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

Abstract: Optimal strain in the channel region of a PMOS transistor is provided by silicon alloy material in the junction regions of the device in a non-planar relationship with the surface of the substrate. The silicon alloy material, the dimensions of the silicon alloy material, as well as the non-planar relationship of the silicon alloy material with the surface of the substrate are selected so that the difference between the lattice spacing of the silicon alloy material and of the substrate causes strains in the silicon alloy material below the substrate surface, as well as above the substrate surface, to affect an optimal silicon alloy induced strain in the substrate channel. In addition, the non-planar relationship may be selected so that any strains caused by different lattice spaced layers formed over the silicon alloy material have a reduced effect on the strain in the channel region.

Abstract: Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.

Abstract: A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about 3E18/cm3.

Abstract: A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.

Abstract: A communications packet network is planned by the use of a planning tool. The tool comprises an input for inputting requirements of the network; and an input for determining factors which effect the passage of packet based data through the network. A modelling module determines the performance of the network based on the requirements and factors. The performance of model is compared with that of an objective comparison model. A feedback mechanism iteratively adjusts the input factors to improve the performance and maintain the network requirements. When the desired performance level is achieved, a plan of the network is output from the planning tool.

Abstract: A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.

Abstract: A marine propulsion system comprising a push rod (50) for adjusting the pitch of propeller blades (34). The push rod (50) has a screw-threaded bolt (60) engaged with a nut (78). The nut (78) carries a bevel gear (84) by which the nut (78) can be rotated to cause the bolt (60) and therefore the push rod (50) to move longitudinally. The push rod (50) is connected to a claw with arms couple with pins (170). The pins (170) engage eccentric shafts (174) for unlocking a propeller base (190) so the base (190) can rotate around a transverse axis. The base (190) has an inclined surface which engages with an inclined surface defining an opening in the propeller's hub therefore locking the propeller blade (34) in position. The inclined surfaces are disengaged by rotation of the eccentric shaft (174) thus the propeller blades (34) can be rotated to adjust the pitch and than the inclined surfaces re-engage locking the propeller blade (34) in the pitch adjusted position.