Abstract: An integrated circuit structure comprises one or more fins extending above a surface of a substrate over an N-type well. A gate is over and in contact with the one or more fins. A second shallow N-type doping is below the gate and above the N-type well.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: Methods and apparatuses for displays are disclosed. The display includes a tray, a stand, and a biasing member. The tray comprises a plurality of walls configured to house a plurality of consumer products. The stand is coupled to the tray and comprises an interior wall disengaging an interior face of a stand edge in a first configuration in which the stand is collapsed and engaging the stand edge in a second configuration in which the stand is erect. The biasing member is coupled to the stand and biases the stand to move from the first configuration to the second configuration.

Abstract: Sleep systems for aircraft are disclosed. An example sleep system includes a seat having a first headrest. A lateral sleep apparatus is positioned adjacent the seat. The lateral sleep apparatus includes a second headrest and a cradle coupled to the second headrest. The cradle includes a first attachment assembly and a second attachment assembly. The first attachment assembly is to couple the cradle to a support structure of a cabin of an aircraft and the second attachment assembly is to couple the cradle to the seat.

Abstract: A loading arm includes a stand pipe, a coupler configured to be connected to a tank to deliver a product, and a pipe assembly having a first pipe end pivotally coupled to the stand pipe and a second pipe end pivotally connected to the coupler. The pipe assembly includes a pivot joint disposed between the first pipe end and the second pipe end such that the pipe assembly is movable between a retracted position and an extended position. A linkage assembly has a first portion connected to the pivot joint and a second portion connected to the stand pipe. The linkage assembly is operable to allow for the positioning of the coupler at any of a plurality of points corresponding to the pipe assembly being positioned between the retracted position and the extended position. The linkage assembly is fully supported by the stand pipe such that movement of the pipe assembly does not require manipulating the weight of the linkage assembly.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: A liquid dispensing product having: a spray dispenser having a nozzle with a guard of the nozzle and a liquid composition, the spray dispenser configured to spray the composition. The spray dispenser having a shroud housing a pump, the shroud having a shroud top surface, a shroud bottom edge opposing the shroud top surface and shroud walls connecting the shroud top surface to the shroud bottom edge; a rotatable nozzle cover housing a discharge nozzle, the discharge nozzle in fluid communication with the pump; a trigger operatively engaged with the pump; and a guard proximate the nozzle cover, the guard inhibiting contact by an outside structure or force with the nozzle cover from at least one direction. The guard is not in direct contact with the nozzle. The liquid composition having from about 5% to about 15%, by weight of the composition, of a surfactant system.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: There is disclosed in an example, a gallium nitride (GaN) field effect transistor (FET) having a gate, a drain, and a source, having: a doped GaN buffer layer; a first epitaxy layer above the buffer layer, the first epitaxy layer having a first doping profile (for example, doped, or p-type doping); and a second epitaxy layer above the first epitaxy layer, the second epitaxy layer having a second doping profile (for example, undoped, or n-type doping).

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: A loading arm includes a stand pipe, a coupler configured to be connected to a tank to deliver a product, and a pipe assembly having a first pipe end pivotally coupled to the stand pipe and a second pipe end pivotally connected to the coupler. The pipe assembly includes a pivot joint disposed between the first pipe end and the second pipe end such that the pipe assembly is movable between a retracted position and an extended position. A linkage assembly has a first portion connected to the pivot joint and a second portion connected to the stand pipe. The linkage assembly is operable to allow for the positioning of the coupler at any of a plurality of points corresponding to the pipe assembly being positioned between the retracted position and the extended position. The linkage assembly is fully supported by the stand pipe such that movement of the pipe assembly does not require manipulating the weight of the linkage assembly.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: Systems and methods for determining and sending a preferred of two electronic mail communications or messages (‘emails’) to a group to increase likelihood of its review. Information for conducting a test between two emails, referred to as A email and B email, is collected. The information may identify a particular group, and segments A and B of the group. The information may provide content for the emails and include differentiation information between the emails. Determination information on how to select one of the emails as the preferred email and when to select the preferred email may be collected. The information is used to send the A email to the segment A, to send the B email to the segment B, to determine the preferred email between the A email and the B email, and to send the preferred email to at least a portion of the particular group.

Abstract: A garden tool adapter is provided for punching holes for seeds. The adapter comprises an elongated tube having male threads on each end and a plurality of spaced apart openings formed therethrough, a pair of end caps having female threads corresponding to the male threads, and an optional plurality of spacers configured to fit onto prongs of a garden tool. The openings in the elongated tube configured to receive the prongs of the garden tool after which the elongated tube is pushed against the spacers, if used, and the end caps tightened against the outer surface of outer prongs.