Abstract: A micro-electro-mechanical system (MEMS) device and a manufacturing method are provided. The device includes top and bottom cap wafers and a MEMS wafer disposed between the top cap wafer and the bottom cap wafer. The top, bottom and MEMS wafers define sidewalls of a cavity. A MEMS structure is housed within the cavity and is movable relative to the top and bottom caps. At least one electrode is provided in one of the wafers, the electrode being operatively coupled to the MEMS structure to detect or induce a movement thereof. A support structure extends through the cavity from the top cap wafer to the bottom cap wafer to prevent bowing in the top cap and bottom cap wafers.

Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.

Abstract: A MEMS device is provided. The device includes a MEMS wafer, a top cap wafer and a bottom cap wafer. The top and bottom cap wafers are respectively bonded to first and second sides of the MEMS wafer, the MEMS and cap wafers being electrically conductive. The outer side of the top cap wafer is provided with electrical contacts. The MEMS wafer, the top cap wafer and the bottom cap wafer define a cavity for housing a MEMS structure. The device includes insulated conducting pathways extending from within the bottom cap wafer, through the MEMS wafer and through the top cap wafer. The pathways are connected to the respective electrical contacts on the top cap wafer, for routing electrical signals from the bottom cap wafer to the electrical contacts on the top cap wafer. A method of manufacturing the MEMS device is also provided.

Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

Abstract: A MEMS device is provided. The device includes a MEMS wafer, a top cap wafer and a bottom cap wafer. The top and bottom cap wafers are respectively bonded to first and second sides of the MEMS wafer, the MEMS and cap wafers being electrically conductive. The outer side of the top cap wafer is provided with electrical contacts. The MEMS wafer, the top cap wafer and the bottom cap wafer define a cavity for housing a MEMS structure. The device includes insulated conducting pathways extending from within the bottom cap wafer, through the MEMS wafer and through the top cap wafer. The pathways are connected to the respective electrical contacts on the top cap wafer, for routing electrical signals from the bottom cap wafer to the electrical contacts on the top cap wafer. A method of manufacturing the MEMS device is also provided.

Abstract: The present invention relates generally to a High Efficiency MEMS Micro-Vibrational Energy Harvester (?VEH) having a thick beam bimorph architecture. The disclosed architecture is capable of producing a voltage of sufficient magnitude such that the requirement to connect a plurality of harvesters in series to produce an adequate voltage magnitude is eliminated.

Abstract: The present invention relates generally to a High Efficiency MEMS Micro-Vibrational Energy Harvester (?VEH) having a thick beam bimorph architecture. The disclosed architecture is capable of producing a voltage of sufficient magnitude such that the requirement to connect a plurality of harvesters in series to produce an adequate voltage magnitude is eliminated.

Abstract: High speed, optically-multiplexed, hyperspectral imagers and methods for producing multiple, spectrally-filtered image information of a scene. In a preferred embodiment, an array of imaging lenslets project multiple images of a scene along parallel optical paths which are then collimated, filtered into distinct wavelengths, and focused onto an array of image sensors. A digital image formatter converts output data from the image sensors into hyperspectral image information of the scene.

Abstract: A compact, high resolution, bright and long life modulator for projection displays, mates a field emission array (FEA) with a deformable light valve modulator (DLVM) of reflective operation in a thin vacuum package. The DLVM includes a continuous film mirror layer formed on or between one or more deformable layers on a transparent substrate. The field emitters (at least one per pixel) are driven to deliver primary electrons that strike and deposit a charge that produces electrostatic forces that locally deform the continuous film mirror layer. Because the mirror layer is a continuous film, i.e. not pixelated, the modulator resolution is limited only by the addressing resolution of the FEA. Mating the FEA and DLVM technologies also reduces the drive voltage requirements associated with typical FEA driven phosphor displays and scanned beam DLVMs thus improving their performance and extending the lifetime of each.

Abstract: A method for printing or exposing photosensitive media is disclosed herein. The method uses standard spatial light modulators with standard addressing circuitry. The data is written to the device for the first row, the photosensitive media is exposed to the light reflected from the device, and the device is turned off. The data from the first row is then written to the second line of the device, and new data is loaded into the first line of the device. The media is again exposed. This is repeated until the entire region of the drum is completely exposed. The device can be repositioned to cover a different region of the drum and the process would be repeated.

Abstract: A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4.

Abstract: A spatial light modulator (40,70,80,90,130) operable in the analog mode for light beam steering or scanning applications. A deflectable mirror (42, 72) and which may be hexagonal (92, 132) is supported by a torsion hinge (44,86,94) ends along a torsion axis. A plurality of flexure hinges (48,82,106) are provided to support the ends of the mirror (42,72,92,132) and provide a restoration force. The combination of the torsion hinges and the flexure hinges realizes a deflectable pixel that is operable in the linear range for a large range of address voltages. The flexure hinges also maintain a flat undeflected state when no address voltage is applied, and prevent the pixel from collapsing. The pixel may be reinforced, such as about its perimeter (74) to ensure mirror flatness and prevent warping, even during extreme deflections of the mirror. The pixel is electrostatically deflected by applying an address voltage to an underlying address electrode (60,96,98).

Abstract: A method for multiple phase light modulation, said method comprising providing a pixel (20) having at least two modulating elements (22), (24). The method further comprising addressing said at least two modulating elements (22), (24) whereby light incident on said addressed element undergoes discrete phase changes between addressable states. The method further comprises resolving light from said at least two modulating elements (22), (24), into a response having at least three unique phases. Other devices, systems and methods are also disclosed.

Abstract: An optical signal processor which employs a coherent light source, two spatial light modulators and a beam splitter. Light is from the source is reflected from the beam splitter and sent to a first spatial light modulator, then sent through the beam splitter, a Fourier transform is performed and the transformed light is then reflected from the second spacial light modulator. The light form the second spacial light modulator is then inverse transformed and returned to the beam splitter where it is reflected to a readout detector. The signal read out is the correlation map between an input image from the first modulator and a filter image of the second modulator.

Abstract: A phase-contrast DMD based image system 36 for projecting an amplitude and phase modulated image. A flexure beam DMD array 34 is used to allow analog phase modulation of reflected light 38. The phase modulation is converted to amplitude modulation by the phase-contrast imaging optics including a phase plate 42. The resulting amplitude modulated wave is flicker-free and does not need to be synchronized to optical image sensors.

Abstract: An image simulation system 20 for testing sensor systems 26 and for training image sensor personnel wherein synthetic image data is generated by a scene generator 21 and projected by an image projector 23. The image projector 23 uses a digital micromirror device array 27 to modulate the incident energy and create an image. Four modulation schemes are discussed including digital pulse-width modulation, phase contrast modulation, full complex modulation, and analog modulation. The digital pulse width modulation technique will typically require synchronizing the image sensor and the image projector. Phase contrast modulation, full complex modulation, and analog modulation do not require synchronizing the image projector 23 and the sensor system 26. Phase contrast modulation and full complex modulation have the capability to produce phase information within the image. The image simulation system 20 can produce high contrast images and is more flexible than prior art system.

Abstract: A method for producing a vacuum microelectronics device (10) on a substrate (12) and insulating dielectric (14) first forms an electrode base (16) on the insulating dielectric (14). Next, electrode base (16) is covered with a first organic spacer (42) having an aperture (44) for exposing a portion of electrode base (16). Next, a metal layer (46) is applied over organic spacer (42) to form emitter (18) within aperture (44). After removal of organic spacer (42) and metal layer (46), a second organic spacer (44) and a grid material (20) are applied over emitter (18) and electrode base (16). Next, a third organic spacer (50) and an anode metal (22) with access apertures (34) and (36) are placed over the structure. After removing organic spacers (48) and (50), anode metal (22) is sealed with metal (26) to close off access apertures (34) and (36). The result is a vacuum microelectronics device (10) usable is a triode or diode.

Abstract: A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34).

Abstract: A method for producing a vacuum microelectronics device ( 10 ) on a substrate ( 12 ) and insulating dielectric (14) first forms an electrode base (16) on the insulating dielectric (14). Next, electrode base (16) is covered with a first organic spacer (42) having an aperture (44) for exposing a portion of electrode base (16). Next, a metal layer (46) is applied over organic spacer (42) to form emitter (18) within aperture (44). After removal of organic spacer (42) and metal layer (46), a second organic spacer (44) and a grid material (20) are applied over emitter (18) and electrode base (16). Next, a third organic spacer (50) and an anode metal (22) with access apertures ( 34 ) and ( 36 ) are placed over the structure. After removing organic spacers (48) and (50), anode metal (22) is sealed with metal (26) to close off access apertures ( 34 ) and ( 36 ). The result is a vacuum microelectronics device (10) usable is a triode or diode.

Abstract: An optical switching device with switch elements (224) similar to digital micromirror devices (DMD). The switching element (224) resides in a trench (216) between two elevated areas on the substrate (214a, 214b). Sending and receiving fibers (218a, 218b) face each other across the trench (216) with the switch element (224) between them. When the switch is ON, light travels through lenses (220a, 220b) in the trench (216) from one fiber (218b) to the other (218a). When the switch is flipped OFF, the element (224) is activated and blocks the light from the sending fiber (218b) by reflecting or absorbing the light from the sending fiber (218b). The switch is activated and possibly deactivated by addressing electrodes (226a, 226b) under the element (224), which deflects through an air gap towards the activated electrode (226b). For better deflection angles the posts can be arranged closer to one end of the element than the other. An alternate hinge architecture is also provided.