Abstract: Some embodiments of the invention include administering an energy composition. In some embodiments, administering the energy composition may produce an initial perceived effect, a secondary perceived effect, and a tertiary perceived effect. The secondary perceived effect may be perceive prior to the complete dissipation of the initial perceived effect and the tertiary perceived effect may be perceive prior to the complete dissipation of the secondary perceived effect. An herb, such as Mormon tea, may be administered to produce the initial perceived effect. Caffeine may be administered to produce the secondary effect. Theobromine may be administered to produce the tertiary effect.

Abstract: Provided are selector elements with active components comprising insulating matrices and mobile ions disposed within these insulating matrices. Also provided are methods of operating such selector elements. The insulating matrices and mobile ions may be formed from different combinations of materials. For example, the insulating matrix may comprise amorphous silicon or silicon oxide, while mobile ions may be silver ions. In another example, the active component comprises copper and germanium, selenium, or tellerium, e.g., Se61Cu39, Se67Cu33, or Se56Cu44. The active component may be a multilayered structure with a variable composition throughout the structure. For example, the concentration of mobile ions may be higher in a center of the structure, away from the electrode interfaces. In some embodiments, outer layers may be formed from Ge33Se24Cu47, while the middle layer may be formed from Ge47Se29Cu24.

Abstract: Provided are hybrid electrodes comprising base structures and plugs disposed within the base structures. Also provided are selector elements comprising such hybrid electrodes and memory arrays with selector elements used for addressing individual memory cells. Specifically, the base structure and plug of a hybrid electrode have different compositions but both interface the same dielectric of the selector element. This design allows anti-parallel diode and other configurations with a very few components. The base structure and plug may have different dopants, different stoichiometry of the same alloy, or formed from completely different materials. The interfacing surface portions of a hybrid electrode may have different sizes. A combination of these surface portions (e.g., areas, surface conditions) and materials (e.g., compositions) can be used for tuning operating characteristics of selector elements using such hybrid electrodes.

Abstract: The a blind spot monitor arrangement for a truck bumper includes a polymeric bumper reinforcement having a blind spot monitor, a substantially horizontal surface, a substantially vertical face and a lower reinforcement arm. The lower reinforcement arm is substantially parallel to the substantially parallel horizontal surface. The lower reinforcement arm is integral to and connecting a lower end of the rear face to the lower end of the right face. A blind spot monitor is further mounted to the integrated sensor bracket and a bumper cover encloses the blind spot monitor and the polymeric bumper reinforcement.

Abstract: Some embodiments of the invention include an energy composition. In some embodiments, the energy composition may include an herb such as Mormon tea, a methylxanthine such as theobromine, and an active ingredient such as phenylethylamine HCl.

Abstract: Provided are superconducting circuits and method of forming thereof. A superconducting circuit may include a low loss dielectric (LLD) layer formed from one or both of polycrystalline silicon or polycrystalline germanium. The LLD layer may be formed at a low temperature (e.g., less than about 525° C.) using chemical vapor deposition (CVD). Addition of germanium may help to lower the deposition temperature and improve crystallinity of the resulting layer. The LLD layer is formed without adding silicides at the interface of the LLD layer and metal electrode. In some embodiments, an initial layer (e.g., a seed layer or a protective layer) may be formed on a metal electrode prior to forming the LLD layer. For example, the initial layer may include one of zinc sulfide, polycrystalline germanium, or polycrystalline silicon. The initial layer may be deposited at a low pressure (e.g., less than 10 Torr) to ensure higher levels of crystallinity.

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

Abstract: A piping component for controlling the flow of fluids that includes a piping body having an inlet end and an outlet end, including methods of operating such components within a piping system. The piping body may be sized for fluids operating at temperatures from approximately 350° F. up to approximately 500° F., and up to approximately 650° F. In addition, the piping body is made from a silicon-copper alloy consisting essentially of less than 16% zinc, less than trace amounts of lead, less than trace amounts of bismuth, 2 to 6% silicon and a balance of copper (by weight). In certain aspects, less than 0.09% of lead and/or less than 0.09% bismuth are contained in the silicon-copper alloy.

Abstract: Methods and apparatuses for mobile communication device configuration are disclosed. In one example, communications are established with a computing device and a use region is identified. A mobile communication device configuration profile is selected corresponding to the use region and implemented at a mobile communication device.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The metal layer of the selector element can include conductive materials such as metal silicides, and metal silicon nitrides. Conductive materials of the MSM may include tantalum silicide, tantalum silicon nitride, titanium silicide, titanium silicon nitride, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on a silicon semiconductor layer doped with both carbon and nitrogen. The metal layer of the selector element can include conductive materials such as carbon, tungsten, titanium nitride, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a trilayer stack of diamond like carbon/silicon/diamond like carbon. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract: Methods and apparatuses for multiple RF band operation in mobile devices are disclosed. In one example, a method for dual radio frequency band operation includes operating a mobile communication device in a first radio frequency band, monitoring a RSSI associated with the mobile communication device, and switching operation of the mobile communication device to operation in a second radio frequency band responsive to the RSSI crossing a threshold RSSI value.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract: One exemplary embodiment can be an alkylation unit. The alkylation unit can include at least one alkylation reaction zone having an alkylation catalyst, at least one cooler communicating with the at least one alkylation reaction zone, a settler communicating with the at least one alkylation reaction zone and the at least one cooler, a fractionation zone receiving an effluent from the settler passing through a line, and a boot coupled to a substantially horizontal portion of the line. Generally, the boot receives an effluent portion rich in the alkylation catalyst.