Abstract: A method of designing an integrated circuit, integrated circuits using different drive strengths and a signal integrity monitor are provide herein. In one embodiment, the signal integrity monitor includes: (1) a signal interface configured to receive a signal from a parallel data bus for transmission over a plurality of signal paths and (2) a victim signal identifier configured to dynamically determine a potential victim signal path of the plurality of signal paths.

Abstract: Disclosed is a diode clamping circuit that is used in an I/O buffer to suppress noise. Diode-connected CMOS transistors or PN junction transistors are utilized, which are native to the CMOS process. Switching circuitry is also disclosed to isolate the diodes and prevent current drain in the circuit. Switching circuitry is also used to switch between two different power supply voltages.

Abstract: Disclosed is a diode clamping circuit that is used in an I/O buffer to suppress noise. Diode-connected CMOS transistors or PN junction transistors are utilized, which are native to the CMOS process. Switching circuitry is also disclosed to isolate the diodes and prevent current drain in the circuit. Switching circuitry is also used to switch between two different power supply voltages.

Abstract: A high-frequency supply voltage waveform is sampled from a functioning integrated circuit. This waveform is measured at (or coupled closely to) a power supply node on the integrated circuit. A low-frequency supply current waveform is sampled concurrently with the sampling the high-frequency supply voltage waveform. This waveform is measured at a power supply node external to the integrated circuit. A power supply network providing power to the integrated circuit is modeled with a circuit model. The power supply network is modeled using the high-frequency supply voltage waveform as an input to the circuit model. A simulation output is taken at a simulated power supply node corresponding to the power supply node external to said integrated circuit. Based on a comparison of the simulated low-frequency supply current waveform and the low-frequency supply current waveform, a value of at least one component of the circuit model is adjusted.

Abstract: A method of designing an integrated circuit, integrated circuits using different drive strengths and a signal integrity monitor are provide herein. In one embodiment, the signal integrity monitor includes: (1) a signal interface configured to receive a signal from a parallel data bus for transmission over a plurality of signal paths and (2) a victim signal identifier configured to dynamically determine a potential victim signal path of the plurality of signal paths.

Abstract: A global power distribution network in an integrated circuit comprising a first layer of conductive material and a second layer of conductive material. The first layer of conductive material may be (i) coupled to one or more power supplies and (ii) configured to form a plurality of first rails of a mesh. The first rails may (a) supply power to one or more components of a core logic of the integrated circuit, (b) be aligned with a first axis of the integrated circuit, and (c) have one or more parameters configured such that the mesh has a uniform voltage gradient from a perimeter of the integrated circuit to a center of the integrated circuit along the first axis. The second layer of conductive material may be (i) coupled to the one or more power supplies and (ii) configured to form a plurality of second rails of the mesh.

Abstract: One aspect provides an input/output cell. The input/output cell, in one example, includes an input/output layout boundary delineated on a substrate, wherein the input/output layout boundary defines a first side parallel and opposing a second side, a third side parallel and opposing a fourth side, wherein the first and second sides are substantially perpendicular the third and fourth sides. The input/output cell, in this example, further includes input/output transistors positioned within the input/output layout boundary over the substrate. The input/output cell, in this example, further includes first and second power conductors and first and second ground conductors located over the substrate, the first power conductor and first ground conductor extending entirely between the first and second sides and the second power conductor and second ground conductor extending entirely between the third and fourth sides.

Abstract: Method of analyzing noise sensitivity of integrated circuits having at least one memory storage device and a noise sensitivity analyzer. In one embodiment, the noise sensitivity analyzer includes a circuit reservoir, a circuit parser and a circuit evaluator. The circuit reservoir is configured to receive and store a model of a circuit having at least one memory storage device to be analyzed. The circuit parser is configured to identify nodes of the model. The circuit evaluator is configured to apply a large test current to each of the nodes for multiple circuit states of the at least one memory storage device and determine which of the nodes are sensitive nodes.

Abstract: One aspect provides an input/output cell. The input/output cell, in one example, includes an input/output layout boundary delineated on a substrate, wherein the input/output layout boundary defines a first side parallel and opposing a second side, a third side parallel and opposing a fourth side, wherein the first and second sides are substantially perpendicular the third and fourth sides. The input/output cell, in this example, further includes input/output transistors positioned within the input/output layout boundary over the substrate. The input/output cell, in this example, further includes first and second power conductors and first and second ground conductors located over the substrate, the first power conductor and first ground conductor extending entirely between the first and second sides and the second power conductor and second ground conductor extending entirely between the third and fourth sides.

Abstract: Disclosed is a closed-loop feedback system for controlling the soft error rate (SER) due to radiation strikes on electronic circuitry. A variable sensitivity soft error rate detector provides and output corresponding to the soft error rate. This output is supplied to a voltage control. The output of the voltage control is fed back to the sensitivity control of the sensor—thus forming a feedback loop. The output of the voltage control may be the power supply of the soft error rate sensor. The output of the soft error rate sensor may also be used to enable and disable fault tolerant schemes or alert a user.

Abstract: A sequential element having a master stage and a slave stage and a method of testing an IC having a scan chain and an IC. In one embodiment, the sequential element includes an input scan multiplexor configured to place the sequential element in a functional mode or a scan mode in response to a scan enable input and a scan out driver coupled to the slave stage and configured to provide a scan out signal when the sequential element is in the scan mode, the scan out driver coupled to an inverted scan enable input for a negative voltage supply.

Abstract: A storage medium recording a cell library having one or more cells that may be readable by a computer and may be used by the computer to design an integrated circuit. The one or more cells may have a physical dimension parameter and a channel width parameter. The physical dimension parameter may be a footprint of the one or more cells. The channel width parameter may have a minimum driver size and a maximum driver size. The channel width parameter may define a range within which a tool varies the channel width between the maximum driver size and the minimum driver size during a design flow of the integrated circuit based upon one or more power criteria without changing the footprint.

Abstract: One aspect provides an input/output cell. The input/output cell, in one example, includes an input/output layout boundary delineated on a substrate, wherein the input/output layout boundary defines a first side parallel and opposing a second side, a third side parallel and opposing a fourth side, wherein the first and second sides are substantially perpendicular the third and fourth sides. The input/output cell, in this example, further includes input/output transistors positioned within the input/output layout boundary over the substrate. The input/output cell, in this example, further includes first and second power conductors and first and second ground conductors located over the substrate, the first power conductor and first ground conductor extending entirely between the first and second sides and the second power conductor and second ground conductor extending entirely between the third and fourth sides.

Abstract: A radiation sensor for an integrated circuit (IC), a radiation sensing method and an IC incorporating the sensor or the method. In one embodiment, the radiation sensor includes: (1) a built-in self-test (BIST) controller configured to provide BIST with respect to main IC circuitry of the IC and (2) a radiation sensor controller coupled to the main IC circuitry and the BIST controller and configured to identify temporarily inactive portions of the main IC circuitry and cause the BIST controller to perform at least one BIST with respect to at least one of the portions, the at least one of the portions acting as a radiation target.

Abstract: A modulated clock, a method of providing a modulated clock signal, an integrated circuit including a modulated clock and a library of cells including a modulated clock. In one embodiment, the modulated clock includes (1) a clock controller configured to generate a digital control stream and (2) clock logic circuitry having a first input configured to receive a clock signal and a second input configured to receive the digital control stream. The clock logic circuitry is configured to provide a modulated clock signal in response to the clock signal and the digital control stream, wherein the modulated clock signal has an effective frequency that differs from the first frequency.

Abstract: An apparatus and method for providing a read-only memory (ROM) bit cell having one each of a PMOS transistor and an NMOS transistor, which has reduced static and dynamic electric power losses, are described. In particular, the bit cell does not require a pre-charge transistor. The sense amplifier for determining the voltages on ROM bit lines may be a digital inverter, address decoding may be simplified since there are no timing requirements with respect to transistor pre-charge, and chips containing a plurality of ROM bit cell may be readily programmed. In one embodiment of the invention, each bit cell includes one PMOS transistor having its source in electrical connection with a voltage source, its drain connected or unconnected to a bit line, and its gate connected to an inverted version of the word line signal; and one NMOS transistor having its source connected to a lower voltage source, its drain connected or disconnected to the bit line, and its gate connected to the word line.

Abstract: A D flip-flop (DFF), a method of operating a DFF, a latch and a library of standard logic elements including standard logic elements corresponding to a DFF and a latch. In one embodiment, the DFF has a data input and a data output and includes: (1) a master stage passgate coupled to the data input, (2) a master stage coupled to the master stage passgate and having a hysteresis inverter with feedback transistors of opposite conductivity, (3) a slave stage passgate coupled to the master stage and (4) a slave stage coupled between the slave stage passgate and the data output and having a hysteresis inverter with feedback transistors of opposite conductivity.

Abstract: A storage medium recording a cell library having one or more cells that may be readable by a computer and may be used by the computer to design an integrated circuit. The one or more cells may have a physical dimension parameter and a channel width parameter. The physical dimension parameter may be a footprint of the one or more cells. The channel width parameter may have a minimum driver size and a maximum driver size. The channel width parameter may define a range within which a tool varies the channel width between the maximum driver size and the minimum driver size during a design flow of the integrated circuit based upon one or more power criteria without changing the footprint.

Abstract: A memory for an integrated circuit, a method of designing a memory and an integrated circuit manufactured by the method. In one embodiment, the memory includes: (1) one of: (1a) at least one data input register block and at least one bit enable input register block and (1b) at least one data and bit enable merging block and at least one merged data register block, (2) one of: (2a) at least one address input register block and at least one binary to one-hot address decode block and (2b) at least one binary to one-hot address decode block and at least one one-hot address register block and (3) a memory array, at least one of the blocks having a timing selected to match at least some timing margins outside of the memory.

Abstract: A global power distribution network in an integrated circuit comprising a first layer of conductive material and a second layer of conductive material. The first layer of conductive material may be (i) coupled to one or more power supplies and (ii) configured to form a plurality of first rails of a mesh. The first rails may (a) supply power to one or more components of a core logic of the integrated circuit, (b) be aligned with a first axis of the integrated circuit, and (c) have one or more parameters configured such that the mesh has a uniform voltage gradient from a perimeter of the integrated circuit to a center of the integrated circuit along the first axis. The second layer of conductive material may be (i) coupled to the one or more power supplies and (ii) configured to form a plurality of second rails of the mesh.