Abstract: The application relates to compound of Formula (I) or a pharmaceutically acceptable salt, solvate or prodrug thereof, for use as a medicament.

Abstract: The present description relates to a method of manufacturing a silicon carbide wafer comprising forming a semiconductor substrate comprising SiC at a surface or at least specific parts of the surface thereof; cleaning a surface area of the substrate by a hydrogen plasma atmosphere; applying nickel metal contact material on the cleaned surface area to form SiC/Ni metal stacks at the surface of or at least parts of the SiC substrate; and annealing the SiC/Ni metal stacks to form Ohmic contacts at the interface between the SiC and the nickel metal.

Abstract: Systems and methods are provided for providing a schema-state-based data structure that enables access to new columns in the database table while preventing computational errors from occurring in accessing the old data. For example, the system may enable multiple queries to be received and query responses/results to be provided. The first query request may comprise a FROM field that identifies a database table and an AS-OF field identifies a second time associated with the database table. Upon confirming that a data cell for a column heading in the fetched record does not have valid data at a first time associated with the AS-OF field and does have valid data at a second time associated with the FETCHED field, adding a null value to the data cell in the fetched record and providing the fetched record for the column heading as a query response to the first query request.

Abstract: An I/O connector includes a body comprising a first surface, a second surface, side surfaces extending between the first surface and the second surface, and a cable entrance port at a rear end of the body extending toward a front end of the body. The I/O connector includes a printed circuit board (PCB) positioned between the first surface and the second surface of the body. The PCB includes a first set of one or more electrical components mounted on a first side of the PCB. A first heatsink is disposed on the first surface. The I/O connector includes first heatpipe thermally coupled with the first heatsink and the first set of one or more electrical components, positioned between the first surface and the first side of the PCB.

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated with a cleaning agent to remove oxide over the metal silicide protrusions, wherein a size of a metal silicide protrusion of the metal silicide protrusions after treating the first surface with the cleaning agent is smaller than a size of the metal silicide protrusion prior to treating the first surface with the oxidizing agent.

Abstract: An apparatus for performing bioelectric stimulation, the apparatus comprising: a stimulation unit; a measurement unit comprising an amplifier; first and second stimulation electrodes operable to apply electrical signals to tissue of a patient; first and second measurement electrodes operable to receive first and second measurement signals from the tissue of the patient; wherein the stimulation unit is configured to deliver a first stimulation signal to the first stimulation electrode and a second stimulation signal to the second stimulation electrode; wherein the first signal and the second signal are mirrored about a biasing voltage, the biasing voltage set in dependence of the dynamic range of the amplifier.

Abstract: An I/O connector includes a body comprising a first surface, a second surface, side surfaces extending between the first surface and the second surface, and a cable entrance port at a rear end of the body extending toward a front end of the body. The I/O connector includes a printed circuit board (PCB) positioned between the first surface and the second surface of the body. The PCB includes a first set of one or more electrical components mounted on a first side of the PCB. A first heatsink is disposed on the first surface. The I/O connector includes first heatpipe thermally coupled with the first heatsink and the first set of one or more electrical components, positioned between the first surface and the first side of the PCB.

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated with a cleaning agent to remove oxide over the metal silicide protrusions, wherein a size of a metal silicide protrusion of the metal silicide protrusions after treating the first surface with the cleaning agent is smaller than a size of the metal silicide protrusion prior to treating the first surface with the oxidizing agent.

Abstract: An I/O connector includes a body comprising a first surface, a second surface, side surfaces extending between the first surface and the second surface, and a cable entrance port at a rear end of the body extending toward a front end of the body. The I/O connector includes a printed circuit board (PCB) positioned between the first surface and the second surface of the body. The PCB includes a first set of one or more electrical components mounted on a first side of the PCB. A first heatsink is disposed on the first surface. The I/O connector includes first heatpipe thermally coupled with the first heatsink and the first set of one or more electrical components, positioned between the first surface and the first side of the PCB.

Abstract: A system includes an interface to receive a request associated with a third party at a financial service provider from a network-based device associated with a user. The request includes an identifier that identifies an offer. The system further includes a revenue share application configured to determine whether the transaction involves a plurality of third parties and to determine a payment share for each party of the plurality of third parties based on the transaction involving the plurality of third parties. A payment transfer module transfers the payment share from an account of the user to each account associated with each party of the plurality of third parties.

Abstract: A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP.

Abstract: A system includes an interface to receive a request associated with a third party at a financial service provider from a network-based device associated with a user. The request includes an identifier that identifies an offer. The system further includes a revenue share application configured to determine whether the transaction involves a plurality of third parties and to determine a payment share for each party of the plurality of third parties based on the transaction involving the plurality of third parties. A payment transfer module transfers the payment share from an account of the user to each account associated with each party of the plurality of third parties.

Abstract: A method of manufacturing a semiconductor device includes: forming one or more transistor cells in a first region of a semiconductor substrate, the semiconductor substrate having a second region that is devoid of transistor cells; forming a first dielectric material over the first and second regions; forming a second dielectric material over the first dielectric material; forming a pn diode in the first dielectric material over the second region; etching first contact grooves into a p-type region of the pn diode, second contact grooves into an n-type region of the pn diode, and third contact grooves into the first region of the semiconductor substrate at the same time using a common contact formation process; and filling the first contact grooves, the second contact grooves and the third contact grooves with an electrically conductive material.

Abstract: An apparatus for performing bioelectric stimulation, the apparatus comprising: a stimulation unit; a measurement unit comprising an amplifier; first and second stimulation electrodes operable to apply electrical signals to tissue of a patient; first and second measurement electrodes operable to receive first and second measurement signals from the tissue of the patient; wherein the stimulation unit is configured to deliver a first stimulation signal to the first stimulation electrode and a second stimulation signal to the second stimulation electrode; wherein the first signal and the second signal are mirrored about a biasing voltage, the biasing voltage set in dependence of the dynamic range of the amplifier.

Abstract: An I/O connector includes a body comprising a first surface, a second surface, side surfaces extending between the first surface and the second surface, and a cable entrance port at a rear end of the body extending toward a front end of the body. The I/O connector includes a printed circuit board (PCB) positioned between the first surface and the second surface of the body. The PCB includes a first set of one or more electrical components mounted on a first side of the PCB. A first heatsink is disposed on the first surface. The I/O connector includes first heatpipe thermally coupled with the first heatsink and the first set of one or more electrical components, positioned between the first surface and the first side of the PCB.

Abstract: An optical system includes a base, a plurality of optical fibers, and a plurality of optical components. The base has a fiber retention and alignment section and an optical coupling section. The fiber retention and alignment section have a plurality of alignment members, where each alignment member is configured to receive an optical fiber therein. The optical coupling section has an optical coupling block and includes a plurality of optical coupling elements, with each optical coupling element having an ellipsoidal reflecting surface defining a first focal point and a second focal point. The first focal surface is generally aligned with the first focal point. The second focal surface is generally aligned with the second focal point. Each optical fiber is positioned within one of the alignment members and adjacent one of the first focal surfaces. Each optical component is positioned adjacent one of the second focal surfaces.

Abstract: A system and methods for providing virtual computer-generated interactive archives, activities, illness education for therapeutic support and legacy building via storyboards. The therapeutic support and legacy building can be provided to a variety of individuals, such as those dying or seriously ill, the elderly, and respective family members, friends, and loved ones. In some examples, the system and methods disclosed herein provide a therapeutic solution for anticipatory grief and a virtual reality model for family legacy building. In other cases, the systems and methods disclosed may also provide solutions for the implementation of activities related to coping or illness education.

Abstract: A method of manufacturing a semiconductor device includes: forming one or more transistor cells in a first region of a semiconductor substrate, the semiconductor substrate having a second region that is devoid of transistor cells; forming a first dielectric material over the first and second regions; forming a second dielectric material over the first dielectric material; forming a pn diode in the first dielectric material over the second region; etching first contact grooves into a p-type region of the pn diode, second contact grooves into an n-type region of the pn diode, and third contact grooves into the first region of the semiconductor substrate at the same time using a common contact formation process; and filling the first contact grooves, the second contact grooves and the third contact grooves with an electrically conductive material.

Abstract: A transceiver comprising a chip, a semiconductor laser bonded to the chip, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via a, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip.