Abstract: A transducer comprising an acoustic energy generating means and a resonator. The acoustic energy generating means generates acoustic energy in the frequency range of 0.4 to 2.0 MHz, and is adapted for delivering an approximately uniform amount of acoustic energy to each unit of surface area on a substrate in a given time period when the substrate is rotating. The acoustic energy generating means has a surface area that is less than the surface area of the substrate, and may comprise a wedge shaped piezoelectric crystal. A resonator is attached to the acoustic energy generating means for transmitting the acoustic energy to the substrate.

Abstract: A megasonic cleaning system comprised of a container, a resonator, one or more piezoelectric crystals and a bonding layer comprised of indium or tin for attaching the piezoelectric crystal to the resonator. The resonator comprises a material selected from the group consisting of quartz, sapphire, silicon carbide, silicon nitride, aluminum, ceramics and stainless steel. The piezoelectric crystal may be attached directly to a side or to the bottom of the container, in which case the container acts as the resonator.

Abstract: A transducer comprised of a resonator and a piezoelectric crystal for cleaning single items such as semiconductor wafers and flat panel displays. The resonator is an elongated piece of material having a cross section that is trapezoidal in shape. The parallel sides of the trapezoid form the top and bottom ends of the resonator and the nonparallel sides of the trapezoid focus the acoustic energy on the bottom end of the resonator.

Abstract: A system for making electrical connections to a piezoelectric crystal in a megasonic transducer. The system comprises a printed circuit board, one or more first spring connectors and one or more second spring connectors. The printed circuit board has a first copper trace plated on it that is adapted for electrical connection to the active terminal of an RF generator. A second copper trace is plated on the printed circuit board and is adapted for electrical connection to the ground terminal of the RF generator. The first spring connectors are electrically connected to the first trace and are positioned to make electrical contact with the back side of the piezoelectric crystal. The second spring connectors are electrically connected to the second trace and are positioned to make electrical contact with the front side of the piezoelectric crystal, so that the piezoelectric crystal is exited when the RF generator is in operation.

Abstract: A megasonic cleaning system comprised of a one-piece cleaning tank, one or more piezoelectric crystals and an indium layer for attaching the piezoelectric crystals to the cleaning tank. The tank comprises a material selected from the group consisting of quartz, sapphire, silicon carbide, silicon nitride, ceramics and stainless steel. The piezoelectric crystals are attached directly to a side or to the bottom of the tank.

Abstract: A megasonic cleaning system comprised of a container, a resonator, a piezoelectric crystal and an indium layer for attaching the resonator to the piezoelectric crystal. The container includes a fluid chamber for holding a volume of cleaning solution. The resonator is selected from the group consisting of sapphire, quartz, silicon carbide, silicon nitride and ceramic. The resonator forms the bottom of the container and has an interface surface which abuts the fluid chamber.

Abstract: Apparatus and a method for cleaning, rinsing and drying substrates, such as semiconductor wafers. The apparatus has a cleaning tank in which one or more megasonic transducers are located, the transducers being adapted to direct megasonic energy past the substrates for cleaning the same. The substrates are held in the cleaning tank by an improved holder which can be pivoted from one side to the other to present opposite side margins of the substrates to the megasonic energy field when otherwise such opposite side margins would not be exposed to such energy field due to the blocking action of parts of the holder. A rinse tank for containing a rinse solution is adjacent to the cleaning tank, and a robotic transfer arm mechanism moves the substrates in the holder from the cleaning tank to the rinse tank for immersion of the substrates into the rinse solution which can be heated to an elevated temperature or can be at ambient temperature.

Abstract: Apparatus and a method for cleaning, rinsing and drying substrates, such as semiconductor wafers. The apparatus has a cleaning tank in which one or more megasonic transducers are located, the transducers being adapted to direct megasonic energy past the substrates for cleaning the same. The substrates are held in the cleaning tank by an improved holder which can be pivoted from one side to the other to present opposite side margins of the substrates to the megasonic energy field when otherwise such opposite side margins would not be exposed to such energy field due to the blocking action of parts of the holder. A rinse tank for containing a rinse solution is adjacent to the cleaning tank, and a robotic transfer arm mechanism moves the substrates in the holder from the cleaning tank to the rinse tank for immersion of the substrates into the rinse solution which can be heated to an elevated temperature or can be at ambient temperature.