Patents by Inventor Mark Klare
Mark Klare has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240085174Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: August 21, 2023Publication date: March 14, 2024Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei T LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
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Patent number: 11906451Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.Type: GrantFiled: September 20, 2021Date of Patent: February 20, 2024Assignees: Nova Ltd., GLOBALFOUNDRIES U.S. INC.Inventors: Wei Ti Lee, Heath A. Pois, Mark Klare, Cornel Bozdog, Alok Vaid
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Publication number: 20230408430Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: ApplicationFiled: June 5, 2023Publication date: December 21, 2023Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Patent number: 11733035Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: June 8, 2021Date of Patent: August 22, 2023Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath Pois, Wei T Lee, Lawrence Bot, Michael Kwan, Mark Klare, Charles Larson
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Patent number: 11668663Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: GrantFiled: January 13, 2020Date of Patent: June 6, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Publication number: 20220074878Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.Type: ApplicationFiled: September 20, 2021Publication date: March 10, 2022Applicants: Nova Ltd., GLOBALFOUNDRIES U.S. INC.Inventors: Wei Lee, Heath A. Pois, Mark Klare, Cornel Bozdog, Alok Vaid
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Publication number: 20210372787Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: June 8, 2021Publication date: December 2, 2021Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei T. LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
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Patent number: 11029148Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: May 12, 2020Date of Patent: June 8, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Publication number: 20200370885Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: May 12, 2020Publication date: November 26, 2020Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Publication number: 20200191734Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: ApplicationFiled: January 13, 2020Publication date: June 18, 2020Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Patent number: 10648802Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: August 8, 2019Date of Patent: May 12, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Patent number: 10533961Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: GrantFiled: November 2, 2016Date of Patent: January 14, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Publication number: 20190360800Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: August 8, 2019Publication date: November 28, 2019Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Publication number: 20190033069Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: September 24, 2018Publication date: January 31, 2019Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Publication number: 20180328871Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: ApplicationFiled: November 2, 2016Publication date: November 15, 2018Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Patent number: 10082390Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.Type: GrantFiled: June 19, 2015Date of Patent: September 25, 2018Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Publication number: 20180172609Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.Type: ApplicationFiled: December 18, 2017Publication date: June 21, 2018Inventors: Wei Ti LEE, Heath A. POIS, Mark KLARE, Cornel BOZDOG, Alok VAID
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Publication number: 20170160081Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.Type: ApplicationFiled: June 19, 2015Publication date: June 8, 2017Applicant: ReVera, IncorporatedInventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
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Patent number: 6100189Abstract: A semiconductor device on a semiconductor wafer and the devices made by the method, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.Type: GrantFiled: April 9, 1998Date of Patent: August 8, 2000Assignee: Micron Technology, Inc.Inventors: Yong-Jun Hu, Pai-Hung Pan, Mark Klare
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Patent number: 5856698Abstract: A semiconductor device on a semiconductor wafer, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.Type: GrantFiled: October 28, 1997Date of Patent: January 5, 1999Assignee: Micron Technology, Inc.Inventors: Yong-Jun Hu, Pai-Hung Pan, Mark Klare