Patents by Inventor Mark Klare

Mark Klare has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200370885
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: May 12, 2020
    Publication date: November 26, 2020
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20200191734
    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
    Type: Application
    Filed: January 13, 2020
    Publication date: June 18, 2020
    Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
  • Patent number: 10648802
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: May 12, 2020
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Patent number: 10533961
    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: January 14, 2020
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
  • Publication number: 20190360800
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: August 8, 2019
    Publication date: November 28, 2019
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20190033069
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: September 24, 2018
    Publication date: January 31, 2019
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20180328871
    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
    Type: Application
    Filed: November 2, 2016
    Publication date: November 15, 2018
    Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
  • Patent number: 10082390
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: September 25, 2018
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20180172609
    Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.
    Type: Application
    Filed: December 18, 2017
    Publication date: June 21, 2018
    Inventors: Wei Ti LEE, Heath A. POIS, Mark KLARE, Cornel BOZDOG, Alok VAID
  • Publication number: 20170160081
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
    Type: Application
    Filed: June 19, 2015
    Publication date: June 8, 2017
    Applicant: ReVera, Incorporated
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Patent number: 6100189
    Abstract: A semiconductor device on a semiconductor wafer and the devices made by the method, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.
    Type: Grant
    Filed: April 9, 1998
    Date of Patent: August 8, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Yong-Jun Hu, Pai-Hung Pan, Mark Klare
  • Patent number: 5856698
    Abstract: A semiconductor device on a semiconductor wafer, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.
    Type: Grant
    Filed: October 28, 1997
    Date of Patent: January 5, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Yong-Jun Hu, Pai-Hung Pan, Mark Klare
  • Patent number: 5739064
    Abstract: A semiconductor device on a semiconductor wafer, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: April 14, 1998
    Assignee: Micron Technology, Inc.
    Inventors: Yong-Jun Hu, Pai-Hung Pan, Mark Klare