Patents by Inventor Mark Leonard

Mark Leonard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10894906
    Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: January 19, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Hongjun Zhou, John Edward Quincy Hughes, Krishna P. Murella, Reinaldo Mario Machado, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
  • Publication number: 20200326929
    Abstract: In accordance with a first aspect of the present disclosure, a system is provided for applying patches to executable codes, comprising: a plurality of execution environments configured to execute said codes in different execution contexts; a control unit configured to apply the patches to said codes; wherein the control unit is configured to apply a specific patch to a specific code upon or after an execution environment configured to execute said specific code switches to an execution context corresponding to said specific code. In accordance with other aspects of the present disclosure, a corresponding method is conceived for applying patches to executable codes, and a corresponding computer program is provided.
    Type: Application
    Filed: April 6, 2020
    Publication date: October 15, 2020
    Inventors: Andreas LESSIAK, Mark Leonard BUER
  • Publication number: 20200291373
    Abstract: The present invention relates to the field of medicine, specifically to the field of treatment of a malignant condition associated with infection with a bacterium that aggravates and/or induces proliferation of the malignant conditions.
    Type: Application
    Filed: October 5, 2018
    Publication date: September 17, 2020
    Inventor: Mark Leonard Offerhaus
  • Publication number: 20200277514
    Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer very high and tunable Cu removal rates for the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing compositions comprise solvent, abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefore; wherein at least one chelator is an amino acid or an amino acid derivative. Organic quaternary ammonium salt, corrosion inhibitor, pH adjustor and biocide can be used in the compositions.
    Type: Application
    Filed: January 24, 2020
    Publication date: September 3, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill
  • Patent number: 10745589
    Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise ?-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 18, 2020
    Assignee: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph Rose, Timothy Joseph Clore, James Allen Schlueter, Malcolm Grief, Mark Leonard O'Neill
  • Publication number: 20200239735
    Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.
    Type: Application
    Filed: January 8, 2020
    Publication date: July 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200239736
    Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.
    Type: Application
    Filed: January 8, 2020
    Publication date: July 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Patent number: 10711693
    Abstract: A turbine engine has a core with a compressor, combustor, and turbine sections in axial flow arrangement and with corresponding rotating elements mounted to a shaft defining engine rotor elements. The turbine engine has a rotary driver operably coupled to the engine rotor elements. The turbine engine has at least one thermoelectric generator in thermal communication with the core and in electrical communication with the rotary driver to provide power to the rotary driver to turn the engine rotor elements.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: July 14, 2020
    Assignee: General Electric Company
    Inventors: Brandon Wayne Miller, Raymond Floyd Martell, Mark Leonard Hopper, Scott Douglas Waun
  • Patent number: 10669449
    Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
    Type: Grant
    Filed: September 9, 2018
    Date of Patent: June 2, 2020
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
  • Publication number: 20200131404
    Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: October 27, 2019
    Publication date: April 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200115590
    Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
    Type: Application
    Filed: September 9, 2018
    Publication date: April 16, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
  • Publication number: 20200095502
    Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles or any other ceria-coated inorganic oxide particles as core particles; suitable chemical additives comprising at least one organic carboxylic acid group, at least one carboxylate salt group or at least one carboxylic ester group and two or more hydroxyl functional groups in the same molecule; and a water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 26, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph D. Rose, Krishna P. Murella, Hongjun Zhou, Mark Leonard O'Neill
  • Patent number: 10597125
    Abstract: A height adjustable depth finder system is provided such that a user may easily raise and lower the height at which a depth finder display is located. Height adjustability may be provided by one or more supports, with at least one support actively driven. The one or more supports may telescope to provide height adjustability and are actively driven by an actuator that may include a wire feed motor or a rack and pinion. In the event of two supports, the two supports may be perpendicular (side-by-side) or parallel (front and back) with the longitudinal axis of the boat. The longitudinal axis of the boat generally forms a “V” line at the lowest part of the hull running from the bow to the stern of the boat.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: March 24, 2020
    Inventor: Timothy Mark Leonard
  • Publication number: 20200051811
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Application
    Filed: September 24, 2019
    Publication date: February 13, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Publication number: 20200048496
    Abstract: The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: August 6, 2019
    Publication date: February 13, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200032107
    Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.
    Type: Application
    Filed: September 9, 2019
    Publication date: January 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Mark Leonard O'Neill
  • Publication number: 20200024515
    Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.
    Type: Application
    Filed: July 12, 2019
    Publication date: January 23, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Chun Lu, Xiaobo Shi, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado, Mark Leonard O'Neill, Matthias Stender
  • Publication number: 20200002608
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 24, 2019
    Publication date: January 2, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200002607
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives, such as ceria coated silica particles; and the chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 24, 2019
    Publication date: January 2, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200002574
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 24, 2019
    Publication date: January 2, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill