Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp??I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group, a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp??II.

Abstract: An extruded thermoplastic product having a surface abrasive to insects. The extruded product is formed from a dry powder composition being comprised of a thermoplastic polymer, a plurality of pelletized diatomaceous earth, and a plurality of expandable microballoons. The composition is mixed and heated in an extrusion machine before being forced into a die of selected profile. Cooling the material immediately after being removed from the die allows the diatomaceous earth to remain at the surface of the material. The material with the surface abrasive to insects is used is used as a component in a product, such as conventional weatherization products, for placement in a building opening that insects use as ingress to the building. Products contemplated for use with the extrusion include door sweeps, door and window seals, and thresholds.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: A turbine engine has a core with a compressor, combustor, and turbine sections in axial flow arrangement and with corresponding rotating elements mounted to a shaft defining engine rotor elements. The turbine engine has a rotary driver operably coupled to the engine rotor elements. The turbine engine has at least one thermoelectric generator in thermal communication with the core and in electrical communication with the rotary driver to provide power to the rotary driver to turn the engine rotor elements.

Abstract: A head restraint assembly includes a base portion mountable to a vehicle seat. Also included is a frame plate disposed within a cover. Further included is a vertical power actuation mechanism operatively coupled to the frame plate for vertical adjustment of the frame plate. Yet further included is a fore-aft power actuation mechanism operatively coupled to the frame plate for fore-aft adjustment of the frame plate.

Abstract: Aspirating face seal between high and low pressure regions of turbomachine between rotatable and non-rotatable members of turbomachine includes gas bearing rotatable and non-rotatable face surfaces, starter tooth mounted on the rotatable member operable to sealingly engage abradable starter seal land on the non-rotatable member, and annular pocket in an abradable coating or other abradable material of starter seal land. Abradable material may be in radially inwardly facing groove extending into non-rotatable member. Pocket may extend radially outwardly from a cylindrical radially outer abradable surface to pocket bottom which includes thin abradable material layer groove surface along the non-rotatable member. Pocket may extend axially aftwardly from annular forward groove side surface into abradable coating. Pocket may be bounded axially by abradable material. Pocket may be tapered having taper decreasing axially aftwardly away from annular forward groove side surface.

Abstract: A lockable armrest includes a main body. The lockable armrest also includes a latch assembly operatively coupled to the main body. The latch assembly includes a latch coupled to the main body with a spring resisting movement of the latch during acceleration events below a predetermined acceleration threshold. The latch assembly also includes a locking member operatively coupled to the main body, the latch moveable into engagement with the locking member in response to an acceleration event greater than the predetermined acceleration threshold to lock the lockable armrest in a stowed condition.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract: A lamp for generating flickering at a selectable frequency corresponding to a desired human brainwave state comprises a base supporting a light source, a shade having a plurality of regularly circumferentially spaced apertures defined therein and a drive mechanism for rotating the shade about the light source. At least one speed control is coupled to the drive mechanism for controlling the rotational speed of the shade. Rotation of the shade while the light source is emitting light produces flickering for an observer looking at the lamp from a fixed position, and the speed control can be used to select a rotational speed of the shade to produce flickering at a frequency corresponding to a pre-selected human brainwave state.

Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.

Abstract: A housing for retention of the outer race of a bearing of a gas turbine engine includes an arrangement of spring fingers that yields a lightweight housing capable of withstanding very high radial loads combined with very high torsional windup and axial thrust load. Controlled circumferential gaps on both sides of each spring finger limit the deflection and self-arrest the distortion of the housing. The spring fingers define at least one side edge that extends at an angle relative to the axial direction. An axial gap is created on the aft end by a portion of the spring finger beam structure that opposes an axial face of the housing and limits the axial distortion. A radial gap created between interface hardware of the housing and the inner retention housing also acts to retain the spring finger housing under load in a radial direction.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract: A lamp for generating flickering at a selectable frequency corresponding to a desired human brainwave state comprises a base supporting a light source, a shade having a plurality of regularly circumferentially spaced apertures defined therein and a drive mechanism for rotating the shade about the light source. At least one speed control is coupled to the drive mechanism for controlling the rotational speed of the shade. Rotation of the shade while the light source is emitting light produces flickering for an observer looking at the lamp from a fixed position, and the speed control can be used to select a rotational speed of the shade to produce flickering at a frequency corresponding to a pre-selected human brainwave state.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.