Abstract: A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.

Abstract: In one or more embodiments, barriers for reflective pixels electrodes of display devices and methods are disclosed. In one such embodiment, a reflective spatial light modulator for a display device has a plurality of reflective pixel electrodes. Each reflective pixel electrode may include a conductor, a tantalum containing barrier over the conductor, and a conductive reflector over the conductive barrier.

Abstract: In one or more embodiments, barriers for reflective pixels electrodes of display devices and methods are disclosed. In one such embodiment, a reflective spatial light modulator for a display device has a plurality of reflective pixel electrodes. Each reflective pixel electrode may include a conductor, a tantalum containing barrier over the conductor, and a conductive reflector over the conductive barrier.

Abstract: A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.

Abstract: In one or more embodiments, display devices having electrolessly plated conductors and methods are disclosed. One such embodiment is directed to a method of forming a reflective pixel array for a display device, including forming a plurality of conductive pads, each of the conductive pads corresponding to a reflective pixel, and electrolessly plating each of the conductive pads with a reflective conductor.

Abstract: Some embodiments include methods of forming memory cells. A semiconductor construction may be provided, with such construction including tunnel dielectric material over a semiconductor substrate. The construction may be placed within a chamber. While the construction is within the chamber, a plurality of charge-trapping centers may be dispersed over the tunnel dielectric material. The charge-trapping centers may be nanoclusters formed by sputter-depositing metallic nanoparticles into an aggregation chamber, and then aggregating groups of the nanoparticles into the nanoclusters. Also while the construction is within the chamber, electrically insulative material may be formed over and between the charge-trapping centers. Control gate material may then be formed over the electrically insulative material.

Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.

Abstract: Briefly, a memory device comprising a beta phase tungsten seed layer is disclosed.

Abstract: Some embodiments include methods of forming memory cells. A semiconductor construction may be provided, with such construction including tunnel dielectric material over a semiconductor substrate. The construction may be placed within a chamber. While the construction is within the chamber, a plurality of charge-trapping centers may be dispersed over the tunnel dielectric material. The charge-trapping centers may be nanoclusters formed by sputter-depositing metallic nanoparticles into an aggregation chamber, and then aggregating groups of the nanoparticles into the nanoclusters. Also while the construction is within the chamber, electrically insulative material may be formed over and between the charge-trapping centers. Control gate material may then be formed over the electrically insulative material.

Abstract: Briefly, a memory device comprising a beta phase tungsten seed layer is disclosed.

Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.

Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.