Abstract: Multi-filament microcables are used in place of the traditional monofilament wires as the constituent elements of a woven or braided band. This enhances the function and manufacturability of such bands for various applications, such as orthopaedic applications including sternotomy closures.

Abstract: Multi-filament microcables are used in place of the traditional monofilament wires as the constituent elements of a woven or braided band. This enhances the function and manufacturability of such bands for various applications, such as orthopaedic applications including sternotomy closures.

Abstract: A method and system are provided for speed-dialing an emergency phone call, from a mobile communication device to an enterprise, based on enterprise location data and a selected enterprise emergency-response service. Enterprise location data can be based on prior interaction between a token, uniquely associated with the mobile communication device, and an enterprise electronic location system. Upon termination, possibly automatic, of a first emergency phone call, a second emergency phone call, to an alternate emergency-response service, can be enabled or automatically dialed.

Abstract: An entropy encoder block for use in a context adaptive encoder and an entropy decoder block for use in a context adaptive decoder are provided.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: A method and system are provided for speed-dialling an emergency phone call, from a mobile communication device to an enterprise, based on enterprise location data and a selected enterprise emergency-response service. Enterprise location data can be based on prior interaction between a token, uniquely associated with the mobile communication device, and an enterprise electronic location system. Upon termination, possibly automatic, of a first emergency phone call, a second emergency phone call, to an alternate emergency-response service, can be enabled or automatically dialled.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: An entropy encoder block for use in a context adaptive encoder and an entropy decoder block for use in a context adaptive decoder are provided.

Abstract: A customizable keyboard for a handheld electronic device is provided. The keys of the keyboard are rotatable, either individually or in groups, either under manual control of a user of the device or by means of one or more micro-motors or solenoids controlled by a microprocessor running software on the device. The keyboard may be integrated in the device or may be detachable therefrom.

Abstract: The present invention generates model scenarios of semiconductor chip design and uses interpolation and Monte Carlo, with random number generation inputs, techniques to iteratively assess the models for a more comprehensive and accurate assessment of design space, and evaluation under projected manufacturing conditions. This evaluation information is then incorporated into design rules in order to improve yield.

Abstract: The techniques and technologies described herein relate to the automatic creation of photoresist masks for stress liners used with semiconductor based transistor devices. The stress liner masks are generated with automated design tools that leverage layout data corresponding to features, devices, and structures on the wafer. A resulting stress liner mask (and wafers fabricated using the stress liner mask) defines a stress liner coverage area that extends beyond the boundary of the transistor area and into a stress insensitive area of the wafer. The extended stress liner further enhances performance of the respective transistor by providing additional compressive/tensile stress.

Abstract: A stress-enhanced semiconductor device is provided which includes a substrate having an inactive region and an active region, a first-type stress layer overlying at least a portion of the active region, and a second-type stress layer. The active region includes a first lateral edge which defines a first width of the active region, and a second lateral edge which defines a second width of the active region. The second-type stress layer is disposed adjacent the second lateral edge of the active region.

Abstract: The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.

Abstract: The present invention generates model scenarios of semiconductor chip design and uses interpolation and Monte Carlo, with random number generation inputs, techniques to iteratively assess the models for a more comprehensive and accurate assessment of design space, and evaluation under projected manufacturing conditions. This evaluation information is then incorporated into design rules in order to improve yield.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: A stress-enhanced semiconductor device is provided which includes a substrate having an inactive region and an active region, a first-type stress layer overlying at least a portion of the active region, and a second-type stress layer. The active region includes a first lateral edge which defines a first width of the active region, and a second lateral edge which defines a second width of the active region. The second-type stress layer is disposed adjacent the second lateral edge of the active region.

Abstract: The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.

Abstract: The techniques and technologies described herein relate to the automatic creation of photoresist masks for stress liners used with semiconductor based transistor devices. The stress liner masks are generated with automated design tools that leverage layout data corresponding to features, devices, and structures on the wafer. A resulting stress liner mask (and wafers fabricated using the stress liner mask) defines a stress liner coverage area that extends beyond the boundary of the transistor area and into a stress insensitive area of the wafer. The extended stress liner further enhances performance of the respective transistor by providing additional compressive/tensile stress.

Abstract: A method for updating a list of attendees for a meeting scheduled by a meeting organizer through a user interface of an electronic calendar presented on a display of a system, the system being coupled to respective attendee systems of attendees of the meeting over a network, the method comprising: distributing the list of attendees to the attendee systems; receiving a signal indicating whether a request message from an attendee system is required to request permission for the attendee system to at least one of add and remove one or more selected attendees from the list of attendees; if the request message is required: receiving the request message from the attendee system; presenting the request message to the meeting organizer on the display with a choice of responses for responding to the request message; and, receiving a signal selecting a response from the choice of responses; wherein the choice of responses has an accept response which, when selected, causes the list of attendees to be updated in accorda